Overview
The AFT20P140-4WNR3 is a 24 W symmetrical Doherty RF power LDMOS transistor designed and manufactured by NXP USA Inc. This device is specifically tailored for cellular base station applications that require high power and wide instantaneous bandwidth. The transistor operates within the frequency range of 1880-2025 MHz and is optimized for use in digital predistortion error correction systems. It is known for its ability to withstand extremely high output VSWR and broadband operating conditions, making it a robust choice for demanding RF applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -0.5, +65 | Vdc |
| Gate-Source Voltage | VGS | -6.0, +10 | Vdc |
| Operating Voltage | VDD | 32, +0 | Vdc |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Case Operating Temperature Range | TC | -40 to +125 | °C |
| Operating Junction Temperature Range | TJ | -40 to +225 | °C |
| Power Output | Pout | 24 W Avg. | |
| Frequency Range | f | 1880-2025 MHz | |
| Power Gain | Gps | 17.0 - 20.0 dB | |
| Drain Efficiency | ηD | 38.0 - 41.4 % |
Key Features
- Able to withstand extremely high output VSWR and broadband operating conditions.
- Greater negative gate-source voltage range for improved Class C operation.
- Designed for digital predistortion error correction systems.
- High power output of 24 W average.
- Operates within the frequency range of 1880-2025 MHz.
- Robust thermal performance with thermal resistance, junction to case.
Applications
The AFT20P140-4WNR3 is primarily designed for cellular base station applications. It is particularly suited for systems that require high power and wide instantaneous bandwidth, such as those used in 2G, 3G, and 4G cellular networks. Additionally, its robust performance makes it a viable option for other RF power amplification needs in telecommunications infrastructure.
Q & A
- What is the frequency range of the AFT20P140-4WNR3?
The AFT20P140-4WNR3 operates within the frequency range of 1880-2025 MHz. - What is the average power output of the AFT20P140-4WNR3?
The average power output is 24 W. - What type of applications is the AFT20P140-4WNR3 designed for?
The AFT20P140-4WNR3 is designed for cellular base station applications. - What is the gate-source voltage range for the AFT20P140-4WNR3?
The gate-source voltage range is -6.0 to +10 Vdc. - Can the AFT20P140-4WNR3 withstand high output VSWR?
Yes, it is able to withstand extremely high output VSWR and broadband operating conditions. - What is the operating junction temperature range for the AFT20P140-4WNR3?
The operating junction temperature range is -40 to +225 °C. - Is the AFT20P140-4WNR3 suitable for digital predistortion error correction systems?
Yes, it is designed for use in digital predistortion error correction systems. - What is the storage temperature range for the AFT20P140-4WNR3?
The storage temperature range is -65 to +150 °C. - What is the case operating temperature range for the AFT20P140-4WNR3?
The case operating temperature range is -40 to +125 °C. - How is the thermal performance of the AFT20P140-4WNR3?
The device has robust thermal performance with specified thermal resistance, junction to case.
