BLF6G20LS-110,112
  • Share:

Ampleon USA Inc. BLF6G20LS-110,112

Manufacturer No:
BLF6G20LS-110,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 19DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G20LS-110,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. Although this product is currently obsolete and no longer in production, it was designed for high-performance applications in the RF (Radio Frequency) domain. This transistor was particularly suited for base station applications, operating within the frequency range of 1800 MHz to 2000 MHz.

Key Specifications

Parameter Value Unit
Power Output 110 W
Frequency Range 1800 MHz - 2000 MHz
Voltage - Drain-Source 65 V
Gain 19 dB
Package Type SOT502A
Transistor Type LDMOS (Dual), Common Source

Key Features

  • High Power Output: The BLF6G20LS-110,112 offers a high power output of 110 W, making it suitable for demanding RF applications.
  • Integrated ESD Protection: This transistor features integrated ESD (Electrostatic Discharge) protection, enhancing its reliability and durability.
  • Easy Power Control: It provides easy power control, which is crucial for maintaining stable and efficient operation in base station applications.
  • High Gain: With a gain of 19 dB, this transistor ensures high signal amplification and quality.

Applications

The BLF6G20LS-110,112 was primarily designed for base station applications in the mobile broadband sector. It is suitable for use in cellular networks operating within the frequency range of 1800 MHz to 2000 MHz.

  • Base Stations for Cellular Networks
  • RF Power Amplifiers
  • Wireless Communication Systems

Q & A

  1. What is the power output of the BLF6G20LS-110,112 transistor?

    The power output of the BLF6G20LS-110,112 transistor is 110 W.

  2. What is the frequency range of the BLF6G20LS-110,112 transistor?

    The frequency range of the BLF6G20LS-110,112 transistor is from 1800 MHz to 2000 MHz.

  3. What type of transistor is the BLF6G20LS-110,112?

    The BLF6G20LS-110,112 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.

  4. What is the gain of the BLF6G20LS-110,112 transistor?

    The gain of the BLF6G20LS-110,112 transistor is 19 dB.

  5. Is the BLF6G20LS-110,112 transistor still in production?

    No, the BLF6G20LS-110,112 transistor is obsolete and no longer manufactured.

  6. What package type does the BLF6G20LS-110,112 transistor use?

    The BLF6G20LS-110,112 transistor uses the SOT502A package type.

  7. What are the main applications of the BLF6G20LS-110,112 transistor?

    The main applications include base stations for cellular networks, RF power amplifiers, and wireless communication systems.

  8. Does the BLF6G20LS-110,112 transistor have integrated ESD protection?
  9. What is the voltage rating of the BLF6G20LS-110,112 transistor?

    The voltage rating of the BLF6G20LS-110,112 transistor is 65 V.

  10. How can I obtain a substitute for the BLF6G20LS-110,112 transistor?

    You can find available substitutes through distributors like Digi-Key or by contacting Ampleon USA Inc. directly.

Product Attributes

Transistor Type:LDMOS
Frequency:1.93GHz ~ 1.99GHz
Gain:19dB
Voltage - Test:28 V
Current Rating (Amps):29A
Noise Figure:- 
Current - Test:900 mA
Power - Output:25W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

-
123

Please send RFQ , we will respond immediately.

Same Series
BLF6G20-110,112
BLF6G20-110,112
RF TRANSISTOR
BLF6G20LS-110,112
BLF6G20LS-110,112
RF FET LDMOS 65V 19DB SOT502B

Similar Products

Part Number BLF6G20LS-110,112 BLF6G20LS-140,112 BLF6G20LS-110,118
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS
Frequency 1.93GHz ~ 1.99GHz 1.93GHz ~ 1.99GHz 1.93GHz ~ 1.99GHz
Gain 19dB 16.5dB 19dB
Voltage - Test 28 V 28 V 28 V
Current Rating (Amps) 29A 39A 29A
Noise Figure - - -
Current - Test 900 mA 1 A 900 mA
Power - Output 25W 35.5W 25W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502B
Supplier Device Package SOT502B SOT502B SOT502B

Related Product By Categories

MMBF4416A
MMBF4416A
onsemi
JFET N-CH 35V 15MA SOT23
MW6S004NT1
MW6S004NT1
NXP USA Inc.
FET RF 68V 1.96GHZ PLD-1.5
MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
PD55015TR-E
PD55015TR-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BF545A,215
BF545A,215
NXP USA Inc.
JFET N-CH 30V 6.5MA SOT23
BF861B,235
BF861B,235
NXP USA Inc.
JFET N-CH 25V 15MA SOT23
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R

Related Product By Brand

BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
BLF6G10LS-135R,118
BLF6G10LS-135R,118
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF7G20LS-250P,112
BLF7G20LS-250P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G27LS-40PGJ
BLF6G27LS-40PGJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121E
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB