BLF6G20LS-110,112
  • Share:

Ampleon USA Inc. BLF6G20LS-110,112

Manufacturer No:
BLF6G20LS-110,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 19DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G20LS-110,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. Although this product is currently obsolete and no longer in production, it was designed for high-performance applications in the RF (Radio Frequency) domain. This transistor was particularly suited for base station applications, operating within the frequency range of 1800 MHz to 2000 MHz.

Key Specifications

Parameter Value Unit
Power Output 110 W
Frequency Range 1800 MHz - 2000 MHz
Voltage - Drain-Source 65 V
Gain 19 dB
Package Type SOT502A
Transistor Type LDMOS (Dual), Common Source

Key Features

  • High Power Output: The BLF6G20LS-110,112 offers a high power output of 110 W, making it suitable for demanding RF applications.
  • Integrated ESD Protection: This transistor features integrated ESD (Electrostatic Discharge) protection, enhancing its reliability and durability.
  • Easy Power Control: It provides easy power control, which is crucial for maintaining stable and efficient operation in base station applications.
  • High Gain: With a gain of 19 dB, this transistor ensures high signal amplification and quality.

Applications

The BLF6G20LS-110,112 was primarily designed for base station applications in the mobile broadband sector. It is suitable for use in cellular networks operating within the frequency range of 1800 MHz to 2000 MHz.

  • Base Stations for Cellular Networks
  • RF Power Amplifiers
  • Wireless Communication Systems

Q & A

  1. What is the power output of the BLF6G20LS-110,112 transistor?

    The power output of the BLF6G20LS-110,112 transistor is 110 W.

  2. What is the frequency range of the BLF6G20LS-110,112 transistor?

    The frequency range of the BLF6G20LS-110,112 transistor is from 1800 MHz to 2000 MHz.

  3. What type of transistor is the BLF6G20LS-110,112?

    The BLF6G20LS-110,112 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.

  4. What is the gain of the BLF6G20LS-110,112 transistor?

    The gain of the BLF6G20LS-110,112 transistor is 19 dB.

  5. Is the BLF6G20LS-110,112 transistor still in production?

    No, the BLF6G20LS-110,112 transistor is obsolete and no longer manufactured.

  6. What package type does the BLF6G20LS-110,112 transistor use?

    The BLF6G20LS-110,112 transistor uses the SOT502A package type.

  7. What are the main applications of the BLF6G20LS-110,112 transistor?

    The main applications include base stations for cellular networks, RF power amplifiers, and wireless communication systems.

  8. Does the BLF6G20LS-110,112 transistor have integrated ESD protection?
  9. What is the voltage rating of the BLF6G20LS-110,112 transistor?

    The voltage rating of the BLF6G20LS-110,112 transistor is 65 V.

  10. How can I obtain a substitute for the BLF6G20LS-110,112 transistor?

    You can find available substitutes through distributors like Digi-Key or by contacting Ampleon USA Inc. directly.

Product Attributes

Transistor Type:LDMOS
Frequency:1.93GHz ~ 1.99GHz
Gain:19dB
Voltage - Test:28 V
Current Rating (Amps):29A
Noise Figure:- 
Current - Test:900 mA
Power - Output:25W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

-
123

Please send RFQ , we will respond immediately.

Same Series
BLF6G20-110,112
BLF6G20-110,112
RF TRANSISTOR
BLF6G20LS-110,112
BLF6G20LS-110,112
RF FET LDMOS 65V 19DB SOT502B

Similar Products

Part Number BLF6G20LS-110,112 BLF6G20LS-140,112 BLF6G20LS-110,118
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS
Frequency 1.93GHz ~ 1.99GHz 1.93GHz ~ 1.99GHz 1.93GHz ~ 1.99GHz
Gain 19dB 16.5dB 19dB
Voltage - Test 28 V 28 V 28 V
Current Rating (Amps) 29A 39A 29A
Noise Figure - - -
Current - Test 900 mA 1 A 900 mA
Power - Output 25W 35.5W 25W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502B
Supplier Device Package SOT502B SOT502B SOT502B

Related Product By Categories

BLF574XR,112
BLF574XR,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214A
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
PD55003-E
PD55003-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
A2T09D400-23NR6
A2T09D400-23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
NE5550234-T1-AZ
NE5550234-T1-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD

Related Product By Brand

BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BLF8G22LS-140U
BLF8G22LS-140U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF7G27LS-100,112
BLF7G27LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
BLF7G20LS-90PH
BLF7G20LS-90PH
Ampleon USA Inc.
RF FET LDMOS 90W CDFM4
BLM6G22-30G,118
BLM6G22-30G,118
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO