BLF884PS,112
  • Share:

Ampleon USA Inc. BLF884PS,112

Manufacturer No:
BLF884PS,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 21DB SOT1121B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF884PS,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power transistor designed and manufactured by Ampleon USA Inc. This device is specifically tailored for UHF broadcast transmitter applications and various industrial uses within the UHF band. Known for its excellent ruggedness, the BLF884PS,112 offers optimum thermal behavior and reliability, making it an ideal choice for both digital and analog transmitter systems.

Key Specifications

ParameterConditionsMinTyp/NomMaxUnit
Frequency Range (f range)-470-860MHz
Nominal Output Power at 1 dB Gain Compression (P L(1dB))Test signal: CW-350-W
Power Gain (G p)V DS = 50 V; f 1 = 860 MHz; f 2 = 860.1 MHz2021-dB
Drain Efficiency (η D)V DS = 50 V; I Dq = 0.65 A; f 1 = 860 MHz; f 2 = 860.1 MHz4246-%
Average Output Power (P L(AV))f 1 = 860 MHz; f 2 = 860.1 MHz-150-W
Third-Order Intermodulation Distortion (IMD3)V DS = 50 V; I Dq = 0.65 A; f 1 = 860 MHz; f 2 = 860.1 MHz-32-28-dBc

Key Features

  • Excellent ruggedness and reliability.
  • Optimum thermal behavior with Rth(j-c) = 0.22 K/W.
  • High power gain and efficiency.
  • Designed for broadband operation from 470 MHz to 860 MHz.
  • Internal input matching for high gain and optimum broadband operation.
  • Easy power control.
  • Compliant to Directive 2002/95/EC regarding RoHS.

Applications

  • Communication transmitter applications in the UHF band.
  • Industrial applications in the UHF band.

Q & A

  1. What is the frequency range of the BLF884PS,112? The frequency range is from 470 MHz to 860 MHz.
  2. What is the nominal output power at 1 dB gain compression? The nominal output power at 1 dB gain compression is 350 W.
  3. What is the power gain of the BLF884PS,112? The power gain is typically 21 dB.
  4. What is the drain efficiency of the BLF884PS,112? The drain efficiency is typically 46%.
  5. What are the typical applications of the BLF884PS,112? The typical applications include communication transmitter and industrial applications in the UHF band.
  6. Is the BLF884PS,112 RoHS compliant? Yes, it is compliant to Directive 2002/95/EC regarding RoHS.
  7. What is the thermal resistance (Rth(j-c)) of the BLF884PS,112? The thermal resistance is 0.22 K/W.
  8. What is the average output power of the BLF884PS,112? The average output power is 150 W.
  9. What is the third-order intermodulation distortion (IMD3) of the BLF884PS,112? The IMD3 is typically -28 dBc.
  10. Who is the manufacturer of the BLF884PS,112? The manufacturer is Ampleon USA Inc.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:650 mA
Power - Output:150W
Voltage - Rated:104 V
Package / Case:SOT-1121B
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

$140.91
6

Please send RFQ , we will respond immediately.

Same Series
BLF884P,112
BLF884P,112
RF FET LDMOS 104V 21DB SOT1121A

Similar Products

Part Number BLF884PS,112 BLF884P,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 860MHz 860MHz
Gain 21dB 21dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 650 mA 650 mA
Power - Output 150W 150W
Voltage - Rated 104 V 104 V
Package / Case SOT-1121B SOT-1121A
Supplier Device Package LDMOST LDMOST

Related Product By Categories

BLF571,112
BLF571,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V SOT467C
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF184XRU
BLF184XRU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214A
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
PD54008L-E
PD54008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BLF8G22LS-220J
BLF8G22LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF178XRS,112
BLF178XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 28DB SOT539B
A3I20X050GNR1
A3I20X050GNR1
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BF909WR,115
BF909WR,115
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT343
BF1211WR,115
BF1211WR,115
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
BF511,215
BF511,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23

Related Product By Brand

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
BLF884P,112
BLF884P,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121A
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
BLF7G20LS-250P,112
BLF7G20LS-250P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF8G22LS-160BV,11
BLF8G22LS-160BV,11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B