BLF884PS,112
  • Share:

Ampleon USA Inc. BLF884PS,112

Manufacturer No:
BLF884PS,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 21DB SOT1121B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF884PS,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power transistor designed and manufactured by Ampleon USA Inc. This device is specifically tailored for UHF broadcast transmitter applications and various industrial uses within the UHF band. Known for its excellent ruggedness, the BLF884PS,112 offers optimum thermal behavior and reliability, making it an ideal choice for both digital and analog transmitter systems.

Key Specifications

ParameterConditionsMinTyp/NomMaxUnit
Frequency Range (f range)-470-860MHz
Nominal Output Power at 1 dB Gain Compression (P L(1dB))Test signal: CW-350-W
Power Gain (G p)V DS = 50 V; f 1 = 860 MHz; f 2 = 860.1 MHz2021-dB
Drain Efficiency (η D)V DS = 50 V; I Dq = 0.65 A; f 1 = 860 MHz; f 2 = 860.1 MHz4246-%
Average Output Power (P L(AV))f 1 = 860 MHz; f 2 = 860.1 MHz-150-W
Third-Order Intermodulation Distortion (IMD3)V DS = 50 V; I Dq = 0.65 A; f 1 = 860 MHz; f 2 = 860.1 MHz-32-28-dBc

Key Features

  • Excellent ruggedness and reliability.
  • Optimum thermal behavior with Rth(j-c) = 0.22 K/W.
  • High power gain and efficiency.
  • Designed for broadband operation from 470 MHz to 860 MHz.
  • Internal input matching for high gain and optimum broadband operation.
  • Easy power control.
  • Compliant to Directive 2002/95/EC regarding RoHS.

Applications

  • Communication transmitter applications in the UHF band.
  • Industrial applications in the UHF band.

Q & A

  1. What is the frequency range of the BLF884PS,112? The frequency range is from 470 MHz to 860 MHz.
  2. What is the nominal output power at 1 dB gain compression? The nominal output power at 1 dB gain compression is 350 W.
  3. What is the power gain of the BLF884PS,112? The power gain is typically 21 dB.
  4. What is the drain efficiency of the BLF884PS,112? The drain efficiency is typically 46%.
  5. What are the typical applications of the BLF884PS,112? The typical applications include communication transmitter and industrial applications in the UHF band.
  6. Is the BLF884PS,112 RoHS compliant? Yes, it is compliant to Directive 2002/95/EC regarding RoHS.
  7. What is the thermal resistance (Rth(j-c)) of the BLF884PS,112? The thermal resistance is 0.22 K/W.
  8. What is the average output power of the BLF884PS,112? The average output power is 150 W.
  9. What is the third-order intermodulation distortion (IMD3) of the BLF884PS,112? The IMD3 is typically -28 dBc.
  10. Who is the manufacturer of the BLF884PS,112? The manufacturer is Ampleon USA Inc.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:650 mA
Power - Output:150W
Voltage - Rated:104 V
Package / Case:SOT-1121B
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

$140.91
6

Please send RFQ , we will respond immediately.

Same Series
BLF884P,112
BLF884P,112
RF FET LDMOS 104V 21DB SOT1121A

Similar Products

Part Number BLF884PS,112 BLF884P,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 860MHz 860MHz
Gain 21dB 21dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 650 mA 650 mA
Power - Output 150W 150W
Voltage - Rated 104 V 104 V
Package / Case SOT-1121B SOT-1121A
Supplier Device Package LDMOST LDMOST

Related Product By Categories

MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
A2I25D025NR1
A2I25D025NR1
NXP USA Inc.
IC TRANS RF LDMOS
PD55003L-E
PD55003L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
PD55025-E
PD55025-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BF998R,235
BF998R,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT

Related Product By Brand

BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLP7G22-10Z
BLP7G22-10Z
Ampleon USA Inc.
RF FET LDMOS 65V 16DB 12VDFN
BLF6G10LS-200RN,11
BLF6G10LS-200RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
BLF578XR,112
BLF578XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
CLF1G0035-50H
CLF1G0035-50H
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
BLF8G22LS-160BV,11
BLF8G22LS-160BV,11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B