BLF884PS,112
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Ampleon USA Inc. BLF884PS,112

Manufacturer No:
BLF884PS,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 21DB SOT1121B
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BLF884PS,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power transistor designed and manufactured by Ampleon USA Inc. This device is specifically tailored for UHF broadcast transmitter applications and various industrial uses within the UHF band. Known for its excellent ruggedness, the BLF884PS,112 offers optimum thermal behavior and reliability, making it an ideal choice for both digital and analog transmitter systems.

Key Specifications

ParameterConditionsMinTyp/NomMaxUnit
Frequency Range (f range)-470-860MHz
Nominal Output Power at 1 dB Gain Compression (P L(1dB))Test signal: CW-350-W
Power Gain (G p)V DS = 50 V; f 1 = 860 MHz; f 2 = 860.1 MHz2021-dB
Drain Efficiency (η D)V DS = 50 V; I Dq = 0.65 A; f 1 = 860 MHz; f 2 = 860.1 MHz4246-%
Average Output Power (P L(AV))f 1 = 860 MHz; f 2 = 860.1 MHz-150-W
Third-Order Intermodulation Distortion (IMD3)V DS = 50 V; I Dq = 0.65 A; f 1 = 860 MHz; f 2 = 860.1 MHz-32-28-dBc

Key Features

  • Excellent ruggedness and reliability.
  • Optimum thermal behavior with Rth(j-c) = 0.22 K/W.
  • High power gain and efficiency.
  • Designed for broadband operation from 470 MHz to 860 MHz.
  • Internal input matching for high gain and optimum broadband operation.
  • Easy power control.
  • Compliant to Directive 2002/95/EC regarding RoHS.

Applications

  • Communication transmitter applications in the UHF band.
  • Industrial applications in the UHF band.

Q & A

  1. What is the frequency range of the BLF884PS,112? The frequency range is from 470 MHz to 860 MHz.
  2. What is the nominal output power at 1 dB gain compression? The nominal output power at 1 dB gain compression is 350 W.
  3. What is the power gain of the BLF884PS,112? The power gain is typically 21 dB.
  4. What is the drain efficiency of the BLF884PS,112? The drain efficiency is typically 46%.
  5. What are the typical applications of the BLF884PS,112? The typical applications include communication transmitter and industrial applications in the UHF band.
  6. Is the BLF884PS,112 RoHS compliant? Yes, it is compliant to Directive 2002/95/EC regarding RoHS.
  7. What is the thermal resistance (Rth(j-c)) of the BLF884PS,112? The thermal resistance is 0.22 K/W.
  8. What is the average output power of the BLF884PS,112? The average output power is 150 W.
  9. What is the third-order intermodulation distortion (IMD3) of the BLF884PS,112? The IMD3 is typically -28 dBc.
  10. Who is the manufacturer of the BLF884PS,112? The manufacturer is Ampleon USA Inc.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:650 mA
Power - Output:150W
Voltage - Rated:104 V
Package / Case:SOT-1121B
Supplier Device Package:LDMOST
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Same Series
BLF884P,112
BLF884P,112
RF FET LDMOS 104V 21DB SOT1121A

Similar Products

Part Number BLF884PS,112 BLF884P,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 860MHz 860MHz
Gain 21dB 21dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 650 mA 650 mA
Power - Output 150W 150W
Voltage - Rated 104 V 104 V
Package / Case SOT-1121B SOT-1121A
Supplier Device Package LDMOST LDMOST

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