BLF7G27LS-140,112
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NXP USA Inc. BLF7G27LS-140,112

Manufacturer No:
BLF7G27LS-140,112
Manufacturer:
NXP USA Inc.
Package:
Tube
Description:
RF PFET, 1-ELEMENT, S BAND, SILI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G27LS-140,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed for RF power amplifier applications in the frequency range of 2500 MHz to 2700 MHz. This component, although discontinued, was produced by Ampleon (previously part of NXP USA Inc.) and is particularly suited for base station applications, such as those in W-CDMA networks. It is known for its excellent ruggedness, high efficiency, and low thermal resistance, making it a reliable choice for demanding RF power amplifier roles.

Key Specifications

ParameterConditionsMinTyp/NomMaxUnit
f range25002700MHz
P L(3dB)NCDMA/IS95140W
G pV DS = 28 V15.316.5dB
RL inV DS = 28 V; I Dq = 1300 mA-10dB
η DV DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 1300 mA1922%
P L(AV)30W
ACPR 885kP L(AV) = 30 W; V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 1300 mA-44-48dBc

Key Features

  • Excellent ruggedness and reliability
  • High efficiency and low thermal resistance (Rth) for excellent thermal stability
  • Low memory effects, providing excellent digital pre-distortion capability
  • Internally matched for ease of use
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multicarrier applications in the 2500 MHz to 2700 MHz frequency range

Q & A

  1. What is the frequency range of the BLF7G27LS-140,112?
    The frequency range is from 2500 MHz to 2700 MHz.
  2. What is the nominal output power at 3 dB gain compression?
    The nominal output power at 3 dB gain compression is 140 W.
  3. What is the typical power gain of this transistor?
    The typical power gain is 16.5 dB.
  4. What is the drain efficiency of the BLF7G27LS-140,112?
    The drain efficiency is typically 22%.
  5. Is the BLF7G27LS-140,112 internally matched?
    Yes, it is internally matched for ease of use.
  6. Does the BLF7G27LS-140,112 have integrated ESD protection?
    Yes, it has integrated ESD protection.
  7. What are the typical applications of the BLF7G27LS-140,112?
    Typical applications include RF power amplifiers for W-CDMA base stations and multicarrier applications.
  8. Is the BLF7G27LS-140,112 compliant with any environmental directives?
    Yes, it is compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.
  9. What is the package type of the BLF7G27LS-140,112?
    The package type is SOT502B.
  10. Is the BLF7G27LS-140,112 still in production?
    No, this product has been discontinued.

Product Attributes

Transistor Type:LDMOS
Frequency:2.5GHz ~ 2.7GHz
Gain:16.5dB
Voltage - Test:28 V
Current Rating (Amps):28A
Noise Figure:- 
Current - Test:1.3 A
Power - Output:30W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
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