BLF6G27LS-40P,112
  • Share:

Ampleon USA Inc. BLF6G27LS-40P,112

Manufacturer No:
BLF6G27LS-40P,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF MOSFET LDMOS DL 28V LDMOST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27LS-40P,112 is a 40 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed for base station applications, particularly in the frequency range of 2500 MHz to 2700 MHz. It is also suitable for operation at frequencies from 2300 MHz to 2400 MHz. This product, although discontinued, was part of Ampleon USA Inc.'s portfolio, which was previously the RF Power Division of NXP Semiconductors. The BLF6G27LS-40P has been replaced by the BLM9D2327S-50PB model.

Key Specifications

Symbol Parameter Conditions Min Typ/Nom Max Unit
f range frequency range - 2500 - 2700 MHz
P L(3dB) nominal output power at 3 dB gain compression Test signal: 1-c W-CDMA - 40 - W
G p power gain P L(AV) = 20 W; V DS = 28 V - 17.5 - dB
η D drain efficiency P L(AV) = 20 W; V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 450 mA - 37 - %
ACPR 5M adjacent channel power ratio (5 MHz) P L(AV) = 20 W; V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 450 mA - -35 - dBc
V DS drain-source voltage - - 28 - V
I Dq quiescent drain current - - 450 - mA

Key Features

  • Excellent ruggedness: Ensures durability and reliability in demanding applications.
  • High efficiency: Optimized for high efficiency, reducing power consumption and heat generation.
  • Low thermal resistance: Provides excellent thermal stability, crucial for continuous operation.
  • Broadband operation: Designed for frequencies from 2500 MHz to 2700 MHz, with suitability for 2300 MHz to 2400 MHz.
  • Lower output capacitance: Improves performance in Doherty applications.
  • Low memory effects: Enhances pre-distortability, making it suitable for linear amplification.
  • Internally matched: Simplifies the design process and ensures ease of use.
  • Integrated ESD protection: Protects the device from electrostatic discharge.
  • RoHS compliant: Compliant with Directive 2002/95/EC, regarding Restriction of Hazardous Substances.

Applications

  • RF power amplifiers for W-CDMA base stations: Optimized for use in base stations operating in the 2500 MHz to 2700 MHz frequency range.
  • Multi-carrier applications: Suitable for various multi-carrier scenarios within the specified frequency range.

Q & A

  1. What is the BLF6G27LS-40P,112 used for?

    The BLF6G27LS-40P,112 is used in RF power amplifiers for W-CDMA base stations and multi-carrier applications in the 2500 MHz to 2700 MHz frequency range.

  2. What are the key specifications of the BLF6G27LS-40P,112?

    Key specifications include a nominal output power of 40 W, power gain of 17.5 dB, and drain efficiency of 37% at specified conditions.

  3. Why has the BLF6G27LS-40P,112 been discontinued?

    The BLF6G27LS-40P,112 has been discontinued and replaced by the BLM9D2327S-50PB model.

  4. What are the benefits of the BLF6G27LS-40P,112's low thermal resistance?

    The low thermal resistance provides excellent thermal stability, which is crucial for continuous operation and reliability.

  5. Is the BLF6G27LS-40P,112 RoHS compliant?

    Yes, the BLF6G27LS-40P,112 is compliant with Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

  6. What is the typical drain-source voltage for the BLF6G27LS-40P,112?

    The typical drain-source voltage (V DS) is 28 V.

  7. What is the quiescent drain current for the BLF6G27LS-40P,112?

    The quiescent drain current (I Dq) is 450 mA.

  8. What are the packaging options for the BLF6G27LS-40P,112?

    The device is available in CDFM4 (SOT1121B) package with options for reel and bulk packing.

  9. Does the BLF6G27LS-40P,112 have integrated ESD protection?

    Yes, the BLF6G27LS-40P,112 has integrated ESD protection.

  10. What is the frequency range for which the BLF6G27LS-40P,112 is designed?

    The BLF6G27LS-40P,112 is designed for frequencies from 2500 MHz to 2700 MHz, with suitability for 2300 MHz to 2400 MHz.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.5GHz ~ 2.7GHz
Gain:17.5dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:450 mA
Power - Output:12W
Voltage - Rated:65 V
Package / Case:SOT-1121B
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

$73.33
9

Please send RFQ , we will respond immediately.

Same Series
BLF6G27LS-40P,112
BLF6G27LS-40P,112
RF MOSFET LDMOS DL 28V LDMOST
BLF6G27L-40P,112
BLF6G27L-40P,112
RF FET LDMOS 65V 17DB SOT1121A
BLF6G27L-40P,118
BLF6G27L-40P,118
RF FET LDMOS 65V 17DB SOT1121A
BLF6G27LS-40P,118
BLF6G27LS-40P,118
RF FET LDMOS 65V 17DB SOT1121B

Similar Products

Part Number BLF6G27LS-40P,112 BLF6G27LS-40P,118 BLF6G22LS-40P,112 BLF6G27L-40P,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz 2.11GHz ~ 2.17GHz 2.5GHz ~ 2.7GHz
Gain 17.5dB 17.5dB 19dB 17.5dB
Voltage - Test 28 V 28 V 28 V 28 V
Current Rating (Amps) - - 16A -
Noise Figure - - - -
Current - Test 450 mA 450 mA 410 mA 450 mA
Power - Output 12W 12W 13.5W 12W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case SOT-1121B SOT-1121B SOT-1121B SOT-1121A
Supplier Device Package LDMOST LDMOST LDMOST LDMOST

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
BLF884P,112
BLF884P,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121A
BLF888DSU
BLF888DSU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539B
MMBFJ309LT1G
MMBFJ309LT1G
onsemi
RF MOSFET N-CH JFET SOT23-3
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
PD55015-E
PD55015-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
NE5550979A-T1-A
NE5550979A-T1-A
Renesas Electronics America Inc
RF N-CHANNEL POWER MOSFET
AFT27S012NT1
AFT27S012NT1
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BLF6G21-10G,135
BLF6G21-10G,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF6G10LS-260PRN,1
BLF6G10LS-260PRN,1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BLF6G20-180PN,112
BLF6G20-180PN,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539A
BF909R,235
BF909R,235
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143

Related Product By Brand

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
BLF574XR,112
BLF574XR,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214A
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G38LS-50,112
BLF6G38LS-50,112
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B