MX0912B351Y,114
  • Share:

Ampleon USA Inc. MX0912B351Y,114

Manufacturer No:
MX0912B351Y,114
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF TRANS NPN 20V 1.215GHZ CDFM2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MX0912B351Y,114 is a high-power RF transistor manufactured by Ampleon USA Inc. This NPN transistor is designed for high-frequency applications, leveraging Ampleon's expertise in RF power technology. With a history rooted in over 50 years of RF power leadership, Ampleon's products are known for their reliability and performance in various high-frequency domains.

Key Specifications

SpecificationValue
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Frequency - Transition1.215 GHz
Power Output325 W
Noise Figure7 dB
Voltage50 V

Key Features

  • High-power RF transistor suitable for high-frequency applications.
  • Operates within the frequency range of 0.96 to 1.215 GHz.
  • High power output of 325 W.
  • Low noise figure of 7 dB.
  • Designed with bipolar technology for robust performance.

Applications

The MX0912B351Y,114 is versatile and can be used in various applications, including:

  • 4G LTE and 5G NR infrastructure.
  • Industrial, scientific, and medical (ISM) applications.
  • Broadcast and navigation systems.
  • Safety radio applications.

Q & A

  1. What is the transistor type of the MX0912B351Y,114?
    The MX0912B351Y,114 is an NPN transistor.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 20V.
  3. What is the frequency transition range of the transistor?
    The frequency transition range is up to 1.215 GHz.
  4. What is the power output of the MX0912B351Y,114?
    The power output is 325 W.
  5. What is the noise figure of the transistor?
    The noise figure is 7 dB.
  6. What are the typical applications of the MX0912B351Y,114?
    Typical applications include 4G LTE and 5G NR infrastructure, ISM applications, broadcast, navigation, and safety radio systems.
  7. Who is the manufacturer of the MX0912B351Y,114?
    The manufacturer is Ampleon USA Inc.
  8. What technology does the MX0912B351Y,114 use?
    The transistor uses bipolar technology.
  9. What is the operating voltage of the MX0912B351Y,114?
    The operating voltage is 50 V.
  10. Is the MX0912B351Y,114 still in production?
    No, the MX0912B351Y,114 is listed as obsolete.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):20V
Frequency - Transition:1.215GHz
Noise Figure (dB Typ @ f):- 
Gain:7.6dB
Power - Max:960W
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):21A
Operating Temperature:200°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SOT-439A
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
345

Please send RFQ , we will respond immediately.

Similar Products

Part Number MX0912B351Y,114 MX0912B251Y,114
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 20V 20V
Frequency - Transition 1.215GHz 1.215GHz
Noise Figure (dB Typ @ f) - -
Gain 7.6dB 7.4dB
Power - Max 960W 690W
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Current - Collector (Ic) (Max) 21A 15A
Operating Temperature 200°C (TJ) 200°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case SOT-439A SOT-439A
Supplier Device Package CDFM2 CDFM2

Related Product By Categories

BFU730F,115
BFU730F,115
NXP USA Inc.
RF TRANS NPN 2.8V 55GHZ 4DFP
BFU520AR
BFU520AR
NXP USA Inc.
RF TRANS NPN 12V 10GHZ TO236AB
BFU550WX
BFU550WX
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
BLF6G20-180PN112
BLF6G20-180PN112
NXP USA Inc.
RF POWER TRANSISTORS
BFU580QX
BFU580QX
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT89-3
BFU550XRVL
BFU550XRVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143R
BLT50,115
BLT50,115
NXP USA Inc.
RF TRANS NPN 10V 470MHZ SOT223
BFG325W/XR,115
BFG325W/XR,115
NXP USA Inc.
RF TRANS NPN 6V 14GHZ CMPAK-4
BFG97,115
BFG97,115
NXP USA Inc.
RF TRANS NPN 15V 5.5GHZ SOT223
BFS520,135
BFS520,135
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
BFG310W/XR,115
BFG310W/XR,115
NXP USA Inc.
RF TRANS NPN 6V 14GHZ CMPAK-4
BFS17SE6327HTSA1
BFS17SE6327HTSA1
Infineon Technologies
RF TRANS 2NPN 15V 1.4GHZ SOT363

Related Product By Brand

MX0912B351Y,114
MX0912B351Y,114
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BLF8G22LS-140U
BLF8G22LS-140U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF7G27LS-100,112
BLF7G27LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF7G22LS-200,112
BLF7G22LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF7G22LS-200,118
BLF7G22LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF7G10LS-250
BLF7G10LS-250
Ampleon USA Inc.
RF FET LDMOS 250W SOT502B
BLF8G10LS-160V,118
BLF8G10LS-160V,118
Ampleon USA Inc.
TRANS RF PWR LDMOS 160W SOT502B