MX0912B351Y,114
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Ampleon USA Inc. MX0912B351Y,114

Manufacturer No:
MX0912B351Y,114
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF TRANS NPN 20V 1.215GHZ CDFM2
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MX0912B351Y,114 is a high-power RF transistor manufactured by Ampleon USA Inc. This NPN transistor is designed for high-frequency applications, leveraging Ampleon's expertise in RF power technology. With a history rooted in over 50 years of RF power leadership, Ampleon's products are known for their reliability and performance in various high-frequency domains.

Key Specifications

SpecificationValue
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Frequency - Transition1.215 GHz
Power Output325 W
Noise Figure7 dB
Voltage50 V

Key Features

  • High-power RF transistor suitable for high-frequency applications.
  • Operates within the frequency range of 0.96 to 1.215 GHz.
  • High power output of 325 W.
  • Low noise figure of 7 dB.
  • Designed with bipolar technology for robust performance.

Applications

The MX0912B351Y,114 is versatile and can be used in various applications, including:

  • 4G LTE and 5G NR infrastructure.
  • Industrial, scientific, and medical (ISM) applications.
  • Broadcast and navigation systems.
  • Safety radio applications.

Q & A

  1. What is the transistor type of the MX0912B351Y,114?
    The MX0912B351Y,114 is an NPN transistor.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 20V.
  3. What is the frequency transition range of the transistor?
    The frequency transition range is up to 1.215 GHz.
  4. What is the power output of the MX0912B351Y,114?
    The power output is 325 W.
  5. What is the noise figure of the transistor?
    The noise figure is 7 dB.
  6. What are the typical applications of the MX0912B351Y,114?
    Typical applications include 4G LTE and 5G NR infrastructure, ISM applications, broadcast, navigation, and safety radio systems.
  7. Who is the manufacturer of the MX0912B351Y,114?
    The manufacturer is Ampleon USA Inc.
  8. What technology does the MX0912B351Y,114 use?
    The transistor uses bipolar technology.
  9. What is the operating voltage of the MX0912B351Y,114?
    The operating voltage is 50 V.
  10. Is the MX0912B351Y,114 still in production?
    No, the MX0912B351Y,114 is listed as obsolete.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):20V
Frequency - Transition:1.215GHz
Noise Figure (dB Typ @ f):- 
Gain:7.6dB
Power - Max:960W
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):21A
Operating Temperature:200°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SOT-439A
Supplier Device Package:CDFM2
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Similar Products

Part Number MX0912B351Y,114 MX0912B251Y,114
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 20V 20V
Frequency - Transition 1.215GHz 1.215GHz
Noise Figure (dB Typ @ f) - -
Gain 7.6dB 7.4dB
Power - Max 960W 690W
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Current - Collector (Ic) (Max) 21A 15A
Operating Temperature 200°C (TJ) 200°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case SOT-439A SOT-439A
Supplier Device Package CDFM2 CDFM2

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