MX0912B351Y,114
  • Share:

Ampleon USA Inc. MX0912B351Y,114

Manufacturer No:
MX0912B351Y,114
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF TRANS NPN 20V 1.215GHZ CDFM2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MX0912B351Y,114 is a high-power RF transistor manufactured by Ampleon USA Inc. This NPN transistor is designed for high-frequency applications, leveraging Ampleon's expertise in RF power technology. With a history rooted in over 50 years of RF power leadership, Ampleon's products are known for their reliability and performance in various high-frequency domains.

Key Specifications

SpecificationValue
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Frequency - Transition1.215 GHz
Power Output325 W
Noise Figure7 dB
Voltage50 V

Key Features

  • High-power RF transistor suitable for high-frequency applications.
  • Operates within the frequency range of 0.96 to 1.215 GHz.
  • High power output of 325 W.
  • Low noise figure of 7 dB.
  • Designed with bipolar technology for robust performance.

Applications

The MX0912B351Y,114 is versatile and can be used in various applications, including:

  • 4G LTE and 5G NR infrastructure.
  • Industrial, scientific, and medical (ISM) applications.
  • Broadcast and navigation systems.
  • Safety radio applications.

Q & A

  1. What is the transistor type of the MX0912B351Y,114?
    The MX0912B351Y,114 is an NPN transistor.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 20V.
  3. What is the frequency transition range of the transistor?
    The frequency transition range is up to 1.215 GHz.
  4. What is the power output of the MX0912B351Y,114?
    The power output is 325 W.
  5. What is the noise figure of the transistor?
    The noise figure is 7 dB.
  6. What are the typical applications of the MX0912B351Y,114?
    Typical applications include 4G LTE and 5G NR infrastructure, ISM applications, broadcast, navigation, and safety radio systems.
  7. Who is the manufacturer of the MX0912B351Y,114?
    The manufacturer is Ampleon USA Inc.
  8. What technology does the MX0912B351Y,114 use?
    The transistor uses bipolar technology.
  9. What is the operating voltage of the MX0912B351Y,114?
    The operating voltage is 50 V.
  10. Is the MX0912B351Y,114 still in production?
    No, the MX0912B351Y,114 is listed as obsolete.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):20V
Frequency - Transition:1.215GHz
Noise Figure (dB Typ @ f):- 
Gain:7.6dB
Power - Max:960W
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):21A
Operating Temperature:200°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SOT-439A
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
345

Please send RFQ , we will respond immediately.

Similar Products

Part Number MX0912B351Y,114 MX0912B251Y,114
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 20V 20V
Frequency - Transition 1.215GHz 1.215GHz
Noise Figure (dB Typ @ f) - -
Gain 7.6dB 7.4dB
Power - Max 960W 690W
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Current - Collector (Ic) (Max) 21A 15A
Operating Temperature 200°C (TJ) 200°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case SOT-439A SOT-439A
Supplier Device Package CDFM2 CDFM2

Related Product By Categories

BFU730F,115
BFU730F,115
NXP USA Inc.
RF TRANS NPN 2.8V 55GHZ 4DFP
BFU520X215
BFU520X215
NXP USA Inc.
NPN RF TRANSISTOR
BFU520XAR
BFU520XAR
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFU520R
BFU520R
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFU520Y115
BFU520Y115
NXP USA Inc.
DUAL NPN WIDEBAND RF TRANSISTOR
BFG505,215
BFG505,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG480W,135
BFG480W,135
NXP USA Inc.
RF TRANS NPN 4.5V 21GHZ CMPAK-4
BFR92AW,115
BFR92AW,115
NXP USA Inc.
RF TRANS NPN 15V 5GHZ SOT323-3
BFT92E6327
BFT92E6327
Infineon Technologies
RF TRANS PNP 15V 5GHZ SOT23-3
BFS17WE6327HTSA1
BFS17WE6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
BFG540W/XR,135
BFG540W/XR,135
NXP USA Inc.
RF TRANS NPN 15V 9GHZ CMPAK-4
BFG540/XR,215
BFG540/XR,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143R

Related Product By Brand

BLF571,112
BLF571,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V SOT467C
BLF642,112
BLF642,112
Ampleon USA Inc.
RF MOSFET LDMOS 32V SOT467C
BLF574XR,112
BLF574XR,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214A
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF6G27LS-40PGJ
BLF6G27LS-40PGJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121E
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G24LS-100
BLF7G24LS-100
Ampleon USA Inc.
RF FET LDMOS 100W SOT502B