Overview
The BFU690F,115 is an NPN wideband silicon RF transistor produced by NXP USA Inc. This transistor is designed for high-speed, low-noise applications and is packaged in a plastic, 4-pin dual-emitter SOT343F package. It is particularly suited for use in RF circuits that require high frequency operation and low noise performance.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage (V(BR)CBO) | IC = 2.5 μA; IE = 0 mA | 16 | - | - | V |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | IC = 1 mA; IB = 0 mA | 5.5 | - | - | V |
| Collector Current (IC) | - | 70 | 100 | mA | |
| Transition Frequency (fT) | IC = 60 mA; VCE = 1 V; f = 2 GHz; Tamb = 25 °C | - | 18 | - | GHz |
| Maximum Power Gain (Gp(max)) | IC = 60 mA; VCE = 1 V; f = 1.8 GHz; Tamb = 25 °C | - | 20.5 | - | dB |
| Noise Figure (NF) | IC = 15 mA; VCE = 2 V; f = 1.8 GHz; ΓS = Γopt | - | 0.65 | - | dB |
| Output Power at 1 dB Gain Compression (PL(1dB)) | IC = 70 mA; VCE = 4 V; ZS = ZL = 50 Ω; f = 1.8 GHz; Tamb = 25 °C | - | 22 | - | dBm |
| Collector-Emitter Capacitance (CEBS) | VCB = 2 V; f = 1 MHz | - | 527 | - | fF |
| Collector-Base Capacitance (CCBS) | VCB = 2 V; f = 1 MHz | - | 404 | - | fF |
| Emitter-Base Capacitance (CEBS) | VEB = 0.5 V; f = 1 MHz | - | 1699 | - | fF |
Key Features
- High-speed operation: Suitable for frequencies up to 18 GHz.
- Low noise performance: Ideal for applications requiring minimal noise.
- High power gain: Maximum power gain of up to 20.5 dB at 1.8 GHz.
- Compact packaging: SOT343F package with 4-pin dual-emitter configuration.
- Robust thermal characteristics: Thermal resistance from junction to solder point of 132 K/W.
Applications
- RF amplifiers and circuits: Suitable for use in low to medium power RF amplifiers.
- Wireless communication systems: Used in various wireless communication systems due to its high frequency and low noise characteristics.
- Radar and aerospace applications: Applicable in radar systems and aerospace due to its high-speed and reliability.
- Test and measurement equipment: Can be used in test and measurement equipment requiring high frequency operation.
Q & A
- What is the BFU690F,115 transistor used for? The BFU690F,115 is used for high-speed, low-noise RF applications, particularly in RF amplifiers, wireless communication systems, and radar applications.
- What is the maximum frequency range of the BFU690F,115 transistor? The transistor is suitable for frequencies up to 18 GHz.
- What is the package type of the BFU690F,115 transistor? The transistor is packaged in a plastic, 4-pin dual-emitter SOT343F package.
- What are the thermal characteristics of the BFU690F,115 transistor? The thermal resistance from junction to solder point is 132 K/W.
- What is the maximum power gain of the BFU690F,115 transistor? The maximum power gain is up to 20.5 dB at 1.8 GHz.
- What is the noise figure of the BFU690F,115 transistor? The noise figure is 0.65 dB at 1.8 GHz.
- What is the output power at 1 dB gain compression for the BFU690F,115 transistor? The output power at 1 dB gain compression is 22 dBm at 1.8 GHz.
- Is the BFU690F,115 transistor sensitive to ESD? Yes, the transistor is sensitive to ElectroStatic Discharge (ESD) and requires proper handling precautions.
- What are the limiting values for the collector current of the BFU690F,115 transistor? The collector current should not exceed 100 mA.
- What is the storage temperature range for the BFU690F,115 transistor? The storage temperature range is from -65 °C to +150 °C.
