BFU790F,115
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NXP USA Inc. BFU790F,115

Manufacturer No:
BFU790F,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 2.8V 25GHZ 4DFP
Delivery:
Payment:
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Product Introduction

Overview

The BFU790F,115 is an NPN silicon germanium microwave transistor manufactured by NXP USA Inc. This transistor is designed for high-speed, low-noise applications and is packaged in a plastic, 4-pin dual-emitter SOT343F package. It is particularly suited for use in RF and microwave circuits where high frequency performance and low noise are critical.

Key Specifications

ParameterValue
Transistor TypeNPN Silicon Germanium
Package TypeSOT343F (4-pin dual-emitter)
Maximum Collector-Emitter Voltage2.8 V
Maximum Frequency25 GHz
Collector CurrentUp to 100 mA (depending on the application)
Noise FigureLow noise figure, suitable for high sensitivity applications

Key Features

  • High-speed operation up to 25 GHz
  • Low noise figure, making it suitable for high sensitivity applications
  • Silicon germanium technology for improved performance
  • Compact SOT343F package for space-efficient designs
  • Dual-emitter configuration for flexibility in circuit design

Applications

The BFU790F,115 is ideal for various RF and microwave applications, including:

  • Wireless communication systems
  • Microwave amplifiers and oscillators
  • RF front-end circuits
  • High-frequency measurement equipment
  • Satellite communication systems

Q & A

  1. What is the maximum operating frequency of the BFU790F,115?
    The BFU790F,115 operates up to 25 GHz.
  2. What type of package does the BFU790F,115 use?
    The BFU790F,115 is packaged in a plastic, 4-pin dual-emitter SOT343F package.
  3. What are the key benefits of using silicon germanium technology in the BFU790F,115?
    Silicon germanium technology provides improved high-frequency performance and lower noise figures compared to traditional silicon transistors.
  4. What are some typical applications for the BFU790F,115?
    Typical applications include wireless communication systems, microwave amplifiers and oscillators, RF front-end circuits, high-frequency measurement equipment, and satellite communication systems.
  5. What is the maximum collector current for the BFU790F,115?
    The maximum collector current can be up to 100 mA, depending on the specific application and operating conditions.
  6. Why is the BFU790F,115 suitable for high sensitivity applications?
    The BFU790F,115 is suitable for high sensitivity applications due to its low noise figure.
  7. What is the significance of the dual-emitter configuration in the BFU790F,115?
    The dual-emitter configuration provides flexibility in circuit design and can be used to improve performance in various RF and microwave applications.
  8. Where can I find detailed specifications for the BFU790F,115?
    Detailed specifications can be found on the official NXP website, as well as on distributor websites such as Digi-Key and Farnell.
  9. What is the typical collector-emitter voltage for the BFU790F,115?
    The typical collector-emitter voltage is 2.8 V.
  10. Is the BFU790F,115 suitable for high-power applications?
    No, the BFU790F,115 is not designed for high-power applications but rather for high-speed, low-noise applications.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):2.8V
Frequency - Transition:25GHz
Noise Figure (dB Typ @ f):0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Gain:- 
Power - Max:234mW
DC Current Gain (hFE) (Min) @ Ic, Vce:235 @ 10mA, 2V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343F
Supplier Device Package:4-DFP
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Similar Products

Part Number BFU790F,115 BFU690F,115 BFU710F,115 BFU730F,115 BFU760F,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 2.8V 5.5V 2.8V 2.8V 2.8V
Frequency - Transition 25GHz 18GHz 43GHz 55GHz 45GHz
Noise Figure (dB Typ @ f) 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Gain - 15.5dB ~ 18.5dB - - -
Power - Max 234mW 230mW 136mW 197mW 220mW
DC Current Gain (hFE) (Min) @ Ic, Vce 235 @ 10mA, 2V 90 @ 20mA, 2V 200 @ 1mA, 2V 205 @ 2mA, 2V 155 @ 10mA, 2V
Current - Collector (Ic) (Max) 100mA 100mA 10mA 30mA 70mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-343F SOT-343F SOT-343F SOT-343F SOT-343F
Supplier Device Package 4-DFP 4-DFP 4-DFP 4-DFP 4-DFP

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