Overview
The BFU790F,115 is an NPN silicon germanium microwave transistor manufactured by NXP USA Inc. This transistor is designed for high-speed, low-noise applications and is packaged in a plastic, 4-pin dual-emitter SOT343F package. It is particularly suited for use in RF and microwave circuits where high frequency performance and low noise are critical.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | NPN Silicon Germanium |
Package Type | SOT343F (4-pin dual-emitter) |
Maximum Collector-Emitter Voltage | 2.8 V |
Maximum Frequency | 25 GHz |
Collector Current | Up to 100 mA (depending on the application) |
Noise Figure | Low noise figure, suitable for high sensitivity applications |
Key Features
- High-speed operation up to 25 GHz
- Low noise figure, making it suitable for high sensitivity applications
- Silicon germanium technology for improved performance
- Compact SOT343F package for space-efficient designs
- Dual-emitter configuration for flexibility in circuit design
Applications
The BFU790F,115 is ideal for various RF and microwave applications, including:
- Wireless communication systems
- Microwave amplifiers and oscillators
- RF front-end circuits
- High-frequency measurement equipment
- Satellite communication systems
Q & A
- What is the maximum operating frequency of the BFU790F,115?
The BFU790F,115 operates up to 25 GHz. - What type of package does the BFU790F,115 use?
The BFU790F,115 is packaged in a plastic, 4-pin dual-emitter SOT343F package. - What are the key benefits of using silicon germanium technology in the BFU790F,115?
Silicon germanium technology provides improved high-frequency performance and lower noise figures compared to traditional silicon transistors. - What are some typical applications for the BFU790F,115?
Typical applications include wireless communication systems, microwave amplifiers and oscillators, RF front-end circuits, high-frequency measurement equipment, and satellite communication systems. - What is the maximum collector current for the BFU790F,115?
The maximum collector current can be up to 100 mA, depending on the specific application and operating conditions. - Why is the BFU790F,115 suitable for high sensitivity applications?
The BFU790F,115 is suitable for high sensitivity applications due to its low noise figure. - What is the significance of the dual-emitter configuration in the BFU790F,115?
The dual-emitter configuration provides flexibility in circuit design and can be used to improve performance in various RF and microwave applications. - Where can I find detailed specifications for the BFU790F,115?
Detailed specifications can be found on the official NXP website, as well as on distributor websites such as Digi-Key and Farnell. - What is the typical collector-emitter voltage for the BFU790F,115?
The typical collector-emitter voltage is 2.8 V. - Is the BFU790F,115 suitable for high-power applications?
No, the BFU790F,115 is not designed for high-power applications but rather for high-speed, low-noise applications.