Overview
The BFU550XRVL is an NPN wideband silicon RF transistor produced by NXP USA Inc. It is part of the BFU5 family of transistors, designed for high-speed, low-noise applications up to 2 GHz. This transistor is housed in a plastic, 4-pin dual-emitter SOT143R package, making it suitable for small signal to medium power applications. The BFU550XRVL is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCB) | Open Emitter | - | - | 24 | V |
| Collector-Emitter Voltage (VCE) | Shorted Base | - | - | 24 | V |
| Emitter-Base Voltage (VEB) | Open Collector | - | - | 2 | V |
| Collector Current (IC) | - | - | 15 | 50 | mA |
| Total Power Dissipation (Ptot) | Tsp ≤ 87 °C | - | - | 450 | mW |
| DC Current Gain (hFE) | IC = 15 mA; VCE = 8 V | 60 | 95 | 200 | - |
| Transition Frequency (fT) | IC = 25 mA; VCE = 8 V; f = 900 MHz | - | - | 11 | GHz |
| Minimum Noise Figure (NFmin) | IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt | - | 0.7 | - | dB |
| Maximum Power Gain (Gp(max)) | IC = 15 mA; VCE = 8 V; f = 900 MHz | - | 21.5 | - | dB |
Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified for automotive applications
- Minimum noise figure (NFmin) of 0.7 dB at 900 MHz
- Maximum stable gain of 21.5 dB at 900 MHz
- 11 GHz transition frequency (fT) silicon technology
- High supply voltage and high breakdown voltage capabilities
Applications
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications
- ISM band oscillators
- Applications requiring high supply voltages and high breakdown voltages
Q & A
- What is the maximum collector-emitter voltage of the BFU550XRVL?
The maximum collector-emitter voltage (VCE) is 24 V.
- What is the typical DC current gain (hFE) of the BFU550XRVL?
The typical DC current gain (hFE) is 95 at IC = 15 mA and VCE = 8 V.
- What is the transition frequency (fT) of the BFU550XRVL?
The transition frequency (fT) is 11 GHz at IC = 25 mA and VCE = 8 V.
- What is the minimum noise figure (NFmin) of the BFU550XRVL at 900 MHz?
The minimum noise figure (NFmin) is 0.7 dB at 900 MHz.
- What is the maximum power gain (Gp(max)) of the BFU550XRVL at 900 MHz?
The maximum power gain (Gp(max)) is 21.5 dB at 900 MHz.
- What package type is the BFU550XRVL available in?
The BFU550XRVL is available in a plastic, 4-pin dual-emitter SOT143R package.
- Is the BFU550XRVL AEC-Q101 qualified?
Yes, the BFU550XRVL is AEC-Q101 qualified.
- What are the typical operating temperatures for the BFU550XRVL?
The operating temperature range is -40°C to 150°C (TJ).
- What are some common applications of the BFU550XRVL?
- What is the total power dissipation (Ptot) of the BFU550XRVL?
The total power dissipation (Ptot) is 450 mW at Tsp ≤ 87 °C.
