BFU550WX
  • Share:

NXP USA Inc. BFU550WX

Manufacturer No:
BFU550WX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 11GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU550WX is an NPN silicon RF transistor produced by NXP USA Inc., designed for high-speed, low-noise applications. It is packaged in a plastic, 4-pin dual-emitter SOT143B package, making it suitable for a variety of radio frequency (RF) and microwave applications. This transistor is known for its high frequency performance and low noise characteristics, making it an ideal choice for use in RF amplifiers, oscillators, and other high-frequency circuits.

Key Specifications

Parameter Value
Transistor Type NPN
Package Type SOT143B (4-pin dual-emitter)
Maximum Collector-Emitter Voltage (Vceo) 12 V
Maximum Collector Current (Ic) 50 mA
Maximum Frequency (fT) 11 GHz
Maximum Power Dissipation (Pd) 450 mW
Package Style Surface Mount

Key Features

  • High frequency performance up to 11 GHz
  • Low noise characteristics
  • High gain and low distortion
  • Suitable for RF amplifiers, oscillators, and other high-frequency circuits
  • Compact SOT143B package for space-efficient designs

Applications

  • RF amplifiers and pre-amplifiers
  • Oscillators and frequency multipliers
  • Microwave circuits and systems
  • Wireless communication systems (e.g., cellular, satellite)
  • Radar and navigation systems

Q & A

  1. What is the maximum collector-emitter voltage of the BFU550WX?

    The maximum collector-emitter voltage (Vceo) is 12 V.

  2. What is the package type of the BFU550WX?

    The package type is SOT143B (4-pin dual-emitter).

  3. What is the maximum frequency (fT) of the BFU550WX?

    The maximum frequency (fT) is 11 GHz.

  4. What are the typical applications of the BFU550WX?

    Typical applications include RF amplifiers, oscillators, microwave circuits, wireless communication systems, and radar systems.

  5. What is the maximum power dissipation (Pd) of the BFU550WX?

    The maximum power dissipation (Pd) is 450 mW.

  6. Is the BFU550WX suitable for surface mount assembly?

    Yes, the BFU550WX is designed for surface mount assembly.

  7. What are the key features of the BFU550WX?

    The key features include high frequency performance, low noise characteristics, high gain, and low distortion.

  8. Where can I find detailed specifications for the BFU550WX?

    Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key and Mouser.

  9. What is the collector current rating of the BFU550WX?

    The maximum collector current (Ic) is 50 mA.

  10. Is the BFU550WX used in high-speed applications?

    Yes, the BFU550WX is designed for high-speed, low-noise applications.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:11GHz
Noise Figure (dB Typ @ f):0.6dB @ 900MHz
Gain:18dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 15mA, 8V
Current - Collector (Ic) (Max):50mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
0 Remaining View Similar

In Stock

$0.84
616

Please send RFQ , we will respond immediately.

Same Series
BFU550WX
BFU550WX
RF TRANS NPN 12V 11GHZ SOT323-3

Similar Products

Part Number BFU550WX BFU520WX BFU530WX
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V
Frequency - Transition 11GHz 10GHz 11GHz
Noise Figure (dB Typ @ f) 0.6dB @ 900MHz 0.6dB @ 900MHz 0.6dB @ 900MHz
Gain 18dB 18.5dB 18.5dB
Power - Max 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V 60 @ 5mA, 8V 60 @ 10mA, 8V
Current - Collector (Ic) (Max) 50mA 30mA 40mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70 SC-70

Related Product By Categories

BFU520X235
BFU520X235
NXP USA Inc.
NPN RF TRANSISTOR
BFU520XAR
BFU520XAR
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
MMBTH10-4LT1G
MMBTH10-4LT1G
onsemi
RF TRANS NPN 25V 800MHZ SOT23-3
BFU580QX
BFU580QX
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT89-3
BFU520AVL
BFU520AVL
NXP USA Inc.
RF TRANS NPN 12V 10GHZ TO236AB
BFG520,215
BFG520,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG410W,115
BFG410W,115
NXP USA Inc.
RF TRANS NPN 4.5V 22GHZ CMPAK-4
BFT93,215
BFT93,215
NXP USA Inc.
RF TRANS PNP 12V 5GHZ TO236AB
PBR941,215
PBR941,215
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
BFR93A,235
BFR93A,235
NXP USA Inc.
RF TRANS NPN 12V 6GHZ TO236AB
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BFS17WH6393XTSA1
BFS17WH6393XTSA1
Infineon Technologies
RF TRANS NPN SOT323-3

Related Product By Brand

PDZ24B/ZLX
PDZ24B/ZLX
NXP USA Inc.
DIODE ZENER SOD323
MC9S12XEP100MAL
MC9S12XEP100MAL
NXP USA Inc.
IC MCU 16BIT 1MB FLASH 112LQFP
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MCHC908QT2CDWER
MCHC908QT2CDWER
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 8SO
MIMX8ML4CVNKZAB
MIMX8ML4CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUADLITE BGA
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
74HC240D/C118
74HC240D/C118
NXP USA Inc.
IC BUFFER INVERT 6V 20SO
74LVC02ADB,112
74LVC02ADB,112
NXP USA Inc.
NOR GATE, LVC/LCX/Z SERIES, 4-FU
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
MMPF0200NPAZES
MMPF0200NPAZES
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56QFN
MPX53GP
MPX53GP
NXP USA Inc.
SENSOR GAUGE PRESSURE 7 PSI MAX