BFU550WX
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NXP USA Inc. BFU550WX

Manufacturer No:
BFU550WX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 11GHZ SOT323-3
Delivery:
Payment:
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Product Introduction

Overview

The BFU550WX is an NPN silicon RF transistor produced by NXP USA Inc., designed for high-speed, low-noise applications. It is packaged in a plastic, 4-pin dual-emitter SOT143B package, making it suitable for a variety of radio frequency (RF) and microwave applications. This transistor is known for its high frequency performance and low noise characteristics, making it an ideal choice for use in RF amplifiers, oscillators, and other high-frequency circuits.

Key Specifications

Parameter Value
Transistor Type NPN
Package Type SOT143B (4-pin dual-emitter)
Maximum Collector-Emitter Voltage (Vceo) 12 V
Maximum Collector Current (Ic) 50 mA
Maximum Frequency (fT) 11 GHz
Maximum Power Dissipation (Pd) 450 mW
Package Style Surface Mount

Key Features

  • High frequency performance up to 11 GHz
  • Low noise characteristics
  • High gain and low distortion
  • Suitable for RF amplifiers, oscillators, and other high-frequency circuits
  • Compact SOT143B package for space-efficient designs

Applications

  • RF amplifiers and pre-amplifiers
  • Oscillators and frequency multipliers
  • Microwave circuits and systems
  • Wireless communication systems (e.g., cellular, satellite)
  • Radar and navigation systems

Q & A

  1. What is the maximum collector-emitter voltage of the BFU550WX?

    The maximum collector-emitter voltage (Vceo) is 12 V.

  2. What is the package type of the BFU550WX?

    The package type is SOT143B (4-pin dual-emitter).

  3. What is the maximum frequency (fT) of the BFU550WX?

    The maximum frequency (fT) is 11 GHz.

  4. What are the typical applications of the BFU550WX?

    Typical applications include RF amplifiers, oscillators, microwave circuits, wireless communication systems, and radar systems.

  5. What is the maximum power dissipation (Pd) of the BFU550WX?

    The maximum power dissipation (Pd) is 450 mW.

  6. Is the BFU550WX suitable for surface mount assembly?

    Yes, the BFU550WX is designed for surface mount assembly.

  7. What are the key features of the BFU550WX?

    The key features include high frequency performance, low noise characteristics, high gain, and low distortion.

  8. Where can I find detailed specifications for the BFU550WX?

    Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key and Mouser.

  9. What is the collector current rating of the BFU550WX?

    The maximum collector current (Ic) is 50 mA.

  10. Is the BFU550WX used in high-speed applications?

    Yes, the BFU550WX is designed for high-speed, low-noise applications.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:11GHz
Noise Figure (dB Typ @ f):0.6dB @ 900MHz
Gain:18dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 15mA, 8V
Current - Collector (Ic) (Max):50mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
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Same Series
BFU550WX
BFU550WX
RF TRANS NPN 12V 11GHZ SOT323-3

Similar Products

Part Number BFU550WX BFU520WX BFU530WX
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V
Frequency - Transition 11GHz 10GHz 11GHz
Noise Figure (dB Typ @ f) 0.6dB @ 900MHz 0.6dB @ 900MHz 0.6dB @ 900MHz
Gain 18dB 18.5dB 18.5dB
Power - Max 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V 60 @ 5mA, 8V 60 @ 10mA, 8V
Current - Collector (Ic) (Max) 50mA 30mA 40mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70 SC-70

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