BFG35,115
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NXP USA Inc. BFG35,115

Manufacturer No:
BFG35,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 18V 4GHZ SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFG35,115 is a high-performance RF NPN transistor manufactured by NXP USA Inc. This component is designed for use in high-frequency applications, offering excellent electrical characteristics and reliability. The BFG35,115 is packaged in the SOT223 case, making it suitable for a variety of RF and microwave circuits.

Key Specifications

ParameterValue
Collector Base Voltage (VCBO)25 V
Collector Emitter Voltage (VCEO)18 V
Emitter Base Voltage (VEBO)6 V
Collector Current (IC)500 mA
Power Dissipation (Ptot)1.25 W
Operating FrequencyUp to 4 GHz
Package TypeSOT223
Height1.7 mm
ComplianceLead Free

Key Features

  • High-frequency operation up to 4 GHz
  • High collector current of 500 mA
  • Low noise figure and high gain
  • SOT223 package for compact design
  • Lead-free compliance for environmental sustainability
  • High reliability and stability in RF and microwave applications

Applications

The BFG35,115 is suitable for a wide range of RF and microwave applications, including:

  • RF amplifiers and oscillators
  • Microwave circuits and systems
  • Wireless communication systems
  • Radio frequency identification (RFID) systems
  • Medical and industrial RF equipment

Q & A

  1. What is the maximum collector base voltage of the BFG35,115?
    The maximum collector base voltage (VCBO) is 25 V.
  2. What is the operating frequency range of the BFG35,115?
    The BFG35,115 operates up to 4 GHz.
  3. What is the package type of the BFG35,115?
    The package type is SOT223.
  4. Is the BFG35,115 lead-free?
    Yes, the BFG35,115 is lead-free.
  5. What is the maximum collector current of the BFG35,115?
    The maximum collector current (IC) is 500 mA.
  6. What are some common applications of the BFG35,115?
    Common applications include RF amplifiers, microwave circuits, wireless communication systems, RFID systems, and medical and industrial RF equipment.
  7. What is the power dissipation of the BFG35,115?
    The power dissipation (Ptot) is 1.25 W.
  8. What is the height of the BFG35,115 in its SOT223 package?
    The height is 1.7 mm.
  9. What is the emitter base voltage (VEBO) of the BFG35,115?
    The emitter base voltage (VEBO) is 6 V.
  10. Where can I find detailed specifications for the BFG35,115?
    Detailed specifications can be found in the datasheet available on official NXP websites and through distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):18V
Frequency - Transition:4GHz
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:1W
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 100mA, 10V
Current - Collector (Ic) (Max):150mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SC-73
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Similar Products

Part Number BFG35,115 BFG135,115 BFG31,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP
Voltage - Collector Emitter Breakdown (Max) 18V 15V 15V
Frequency - Transition 4GHz 7GHz 5GHz
Noise Figure (dB Typ @ f) - - -
Gain - - -
Power - Max 1W 1W 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 100mA, 10V 80 @ 100mA, 10V 25 @ 70mA, 10V
Current - Collector (Ic) (Max) 150mA 150mA 100mA
Operating Temperature 175°C (TJ) 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SC-73 SC-73 SC-73

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