BFR520T,115
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NXP USA Inc. BFR520T,115

Manufacturer No:
BFR520T,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 9GHZ SC75
Delivery:
Payment:
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Product Introduction

Overview

The BFR520T,115 is a high-frequency NPN transistor manufactured by NXP USA Inc. This component is designed for wideband applications and is no longer in active production. It is part of NXP's portfolio of RF transistors, known for their high performance and reliability in various electronic systems.

Key Specifications

ParameterValue
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Current - Collector (Ic) (Max)70mA
Frequency - Transition9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 20mA, 6V
Power - Max300mW
Operating Temperature175°C (TJ)
Noise Figure (dB Typ @ f)1.1dB ~ 2.1dB @ 900MHz
Package / CaseSOT-416 (SC-75)
Mounting TypeSurface Mount

Key Features

  • High-frequency operation up to 9 GHz, making it suitable for wideband applications.
  • NPN transistor configuration with a maximum collector current of 70mA.
  • Maximum collector-emitter breakdown voltage of 15V.
  • Low noise figure, typically ranging from 1.1dB to 2.1dB at 900MHz.
  • Surface mount package (SOT-416) for easy integration into modern electronic designs.
  • Operating temperature up to 175°C (TJ), ensuring reliability in various environmental conditions.

Applications

The BFR520T,115 transistor is designed for use in high-frequency electronic circuits, including RF amplifiers, mixers, and switches. It is particularly suitable for applications in wireless communication systems, radar systems, and other high-frequency signal processing equipment.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BFR520T,115 transistor?
    The maximum collector-emitter breakdown voltage is 15V.
  2. What is the maximum collector current of the BFR520T,115 transistor?
    The maximum collector current is 70mA.
  3. What is the frequency range of the BFR520T,115 transistor?
    The transistor operates up to 9 GHz.
  4. What is the noise figure of the BFR520T,115 transistor at 900MHz?
    The noise figure is typically between 1.1dB and 2.1dB at 900MHz.
  5. What is the package type of the BFR520T,115 transistor?
    The package type is SOT-416 (SC-75).
  6. Is the BFR520T,115 transistor still in active production?
    No, the BFR520T,115 is no longer manufactured.
  7. What is the operating temperature range of the BFR520T,115 transistor?
    The operating temperature range is up to 175°C (TJ).
  8. What type of mounting does the BFR520T,115 transistor use?
    The transistor uses surface mount technology.
  9. What are some typical applications of the BFR520T,115 transistor?
    Typical applications include RF amplifiers, mixers, switches, and other high-frequency signal processing equipment.
  10. What is the DC current gain (hFE) of the BFR520T,115 transistor?
    The DC current gain (hFE) is 60 at 20mA and 6V.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.1dB ~ 2.1dB @ 900MHz
Gain:- 
Power - Max:150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 20mA, 6V
Current - Collector (Ic) (Max):70mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75
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