Overview
The BFG520/X,215 is an NPN silicon planar epitaxial transistor manufactured by NXP USA Inc. This transistor is designed for high-frequency applications, particularly in the RF frontend in the GHz range. It is suitable for use in various wireless communication devices, including analog and digital cellular telephones, cordless telephones, and other RF systems.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 20 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | - | 15 | V |
| Ic (DC Collector Current) | - | - | - | 70 | mA |
| Ptot (Total Power Dissipation) | Up to Ts = 88 °C | - | - | 300 | mW |
| hFE (DC Current Gain) | IC = 20 mA; VCE = 6 V; Tj = 25 °C | 60 | 120 | 250 | - |
| fT (Transition Frequency) | IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C | - | - | 9 | GHz |
| GUM (Maximum Unilateral Power Gain) | IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C | - | - | 19 | dB |
| F (Noise Figure) | Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C | - | 1.1 | 1.6 | dB |
Key Features
- High power gain
- Low noise figure
- High transition frequency (up to 9 GHz)
- Gold metallization for excellent reliability
- Encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes
Applications
- Analog and digital cellular telephones
- Cordless telephones (CT1, CT2, DECT, etc.)
- Radar detectors
- Pagers
- Satellite TV tuners (SATV)
- Repeater amplifiers in fibre-optic systems
Q & A
- What is the BFG520/X,215 transistor used for? The BFG520/X,215 is used in high-frequency RF applications, particularly in the GHz range, for devices such as cellular telephones and other wireless communication systems.
- What is the maximum collector-emitter voltage for the BFG520/X,215? The maximum collector-emitter voltage (VCEO) is 15 V.
- What is the transition frequency of the BFG520/X,215? The transition frequency (fT) is up to 9 GHz.
- What is the typical DC current gain (hFE) of the BFG520/X,215? The typical DC current gain (hFE) is 120.
- What is the noise figure of the BFG520/X,215 at 900 MHz? The noise figure at 900 MHz is typically 1.6 dB.
- In what type of packages is the BFG520/X,215 available? The transistor is available in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.
- What is the maximum unilateral power gain (GUM) at 900 MHz? The maximum unilateral power gain (GUM) at 900 MHz is 19 dB.
- What is the total power dissipation limit for the BFG520/X,215? The total power dissipation limit is 300 mW up to Ts = 88 °C.
- Is the BFG520/X,215 suitable for use in fibre-optic systems? Yes, it is suitable for use in repeater amplifiers in fibre-optic systems.
- What type of metallization does the BFG520/X,215 use for reliability? The BFG520/X,215 uses gold metallization for excellent reliability.
