BFG135AE6327XT
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Infineon Technologies BFG135AE6327XT

Manufacturer No:
BFG135AE6327XT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 6GHZ SOT223-4
Delivery:
Payment:
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Product Introduction

Overview

The BFG135AE6327XT is a high-performance RF transistor manufactured by Infineon Technologies. This NPN bipolar junction transistor (BJT) is designed for radio frequency (RF) applications, offering a combination of high frequency operation and low noise characteristics. Although the product is currently discontinued by some distributors, it remains a significant component in various RF systems due to its robust specifications and reliability.

Key Specifications

ParameterValue
TypeNPN Bipolar Junction Transistor (BJT)
Maximum Collector-Emitter Voltage (Vceo)15 V
Maximum Collector Current (Ic)150 mA
Maximum Frequency (fT)6 GHz
Maximum Power Dissipation (Pd)1 W
Package TypePG-SOT223-4 (Surface Mount)

Key Features

  • High frequency operation up to 6 GHz, making it suitable for a wide range of RF applications.
  • Low noise characteristics, which are essential for sensitive RF circuits.
  • High reliability and stability in various operating conditions.
  • Compact PG-SOT223-4 surface mount package, facilitating easy integration into modern RF systems.

Applications

The BFG135AE6327XT is designed for use in various RF applications, including:

  • Wireless communication systems such as cellular networks, Wi-Fi, and Bluetooth devices.
  • Radio transmitters and receivers.
  • RF amplifiers and oscillators.
  • Automotive and industrial electronics requiring high-frequency operation.

Q & A

  1. What is the maximum collector-emitter voltage of the BFG135AE6327XT?
    The maximum collector-emitter voltage (Vceo) is 15 V.
  2. What is the maximum collector current of the BFG135AE6327XT?
    The maximum collector current (Ic) is 150 mA.
  3. What is the maximum frequency of operation for the BFG135AE6327XT?
    The maximum frequency of operation is 6 GHz.
  4. What is the maximum power dissipation of the BFG135AE6327XT?
    The maximum power dissipation (Pd) is 1 W.
  5. What package type does the BFG135AE6327XT use?
    The BFG135AE6327XT uses a PG-SOT223-4 surface mount package.
  6. Is the BFG135AE6327XT still available for purchase?
    The BFG135AE6327XT is currently discontinued by some distributors, but it may still be available from certain suppliers or through secondary markets.
  7. What are some common applications of the BFG135AE6327XT?
    Common applications include wireless communication systems, radio transmitters and receivers, RF amplifiers, and automotive and industrial electronics.
  8. Why is the BFG135AE6327XT suitable for high-frequency applications?
    The BFG135AE6327XT is suitable due to its high frequency operation up to 6 GHz and low noise characteristics.
  9. What are the key features of the BFG135AE6327XT?
    Key features include high frequency operation, low noise characteristics, high reliability, and a compact surface mount package.
  10. Who manufactures the BFG135AE6327XT?
    The BFG135AE6327XT is manufactured by Infineon Technologies.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:6GHz
Noise Figure (dB Typ @ f):1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain:9dB ~ 14dB
Power - Max:1W
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 8V
Current - Collector (Ic) (Max):150mA
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
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