BFM505,115
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NXP USA Inc. BFM505,115

Manufacturer No:
BFM505,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS 2 NPN 8V 9GHZ 6TSSOP
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BFM505,115 is a dual NPN wideband transistor produced by NXP USA Inc. This component is designed in a surface mount, 6-pin SOT363 (S-mini) package and features two silicon NPN RF dies. It is primarily intended for wideband applications, making it a versatile choice for various high-frequency electronic systems.

Key Specifications

ParameterValue
Transistor PolarityDual NPN
Package TypeSOT363 (S-mini), 6-pin
Maximum Collector-Emitter Voltage8 V
Frequency RangeUp to 9 GHz
Package DimensionsSurface mount

Key Features

  • Dual silicon NPN RF transistors in a single package, enhancing integration and reducing board space.
  • Wideband operation up to 9 GHz, suitable for high-frequency applications.
  • Surface mount SOT363 (S-mini) package for easy mounting and reliable connections.
  • High performance and reliability, making it suitable for a variety of RF and microwave applications.

Applications

The BFM505,115 is designed for use in wideband applications, including but not limited to:

  • RF amplifiers and switches.
  • Microwave circuits.
  • Wireless communication systems.
  • High-frequency signal processing.

Q & A

  1. What is the package type of the BFM505,115? The BFM505,115 is packaged in a 6-pin SOT363 (S-mini) surface mount package.
  2. What is the maximum collector-emitter voltage for the BFM505,115? The maximum collector-emitter voltage is 8 V.
  3. What is the frequency range of the BFM505,115? The BFM505,115 operates up to 9 GHz.
  4. What type of transistors are in the BFM505,115? The BFM505,115 contains dual silicon NPN RF transistors.
  5. What are some common applications for the BFM505,115? Common applications include RF amplifiers, microwave circuits, wireless communication systems, and high-frequency signal processing.
  6. Who is the manufacturer of the BFM505,115? The BFM505,115 is manufactured by NXP USA Inc.
  7. What is the primary use of the BFM505,115? The primary use is for wideband applications.
  8. Is the BFM505,115 suitable for high-frequency applications? Yes, it is suitable for high-frequency applications due to its wideband operation up to 9 GHz.
  9. What is the advantage of the dual transistor configuration in the BFM505,115? The dual transistor configuration enhances integration and reduces board space.
  10. Where can I find detailed specifications for the BFM505,115? Detailed specifications can be found on the official NXP website, as well as on distributor websites like Digi-Key and Mouser.

Product Attributes

Transistor Type:2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):8V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
Gain:- 
Power - Max:500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 6V
Current - Collector (Ic) (Max):18mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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