Overview
The NXP BFU730F,115 is a high-performance NPN silicon germanium (SiGe) microwave transistor designed for high-speed, low-noise applications. This transistor is packaged in a plastic, 4-pin dual-emitter SOT343F package, making it suitable for surface mount technology. It is particularly useful in microwave communications systems, low noise amplifiers, and various other high-frequency applications. The BFU730F,115 operates over a wide temperature range from -65°C to 150°C, ensuring reliability in diverse environmental conditions.
Key Specifications
| Attribute | Value |
|---|---|
| Polarity | NPN |
| Type | RF |
| Collector-Emitter Voltage (Max) | 2.8V |
| Collector Current (Max) | 30mA |
| Power Dissipation (Total) | 197mW |
| Collector-Base Voltage | 10V |
| Emitter-Base Voltage | 1V |
| DC Current Gain (Min) | 205 |
| Collector Current Cutoff | 100nA |
| Configuration | Single |
| Frequency - Transition | 55GHz |
| Noise Figure | 0.8 dB at 5.8 GHz |
| Moisture Sensitivity Level | 1 |
| Package Style | SOT-343F-4 |
| Mounting Method | Surface Mount |
| Operating Temperature Range | -65°C to 150°C |
Key Features
- Low noise high gain microwave transistor
- Noise figure (NF) = 0.8 dB at 5.8 GHz
- High maximum power gain of 18.5 dB at 5.8 GHz
- 110 GHz fT silicon germanium technology
- Surface mount package (SOT-343F-4) for easy integration
- Wide operating temperature range from -65°C to 150°C
Applications
- 2nd LNA stage and mixer stage in DBS LNB’s
- Low noise amplifiers for microwave communications systems
- Ka band oscillators and DRO’s
- Low current battery-equipped applications
- Microwave driver / buffer applications
- GPS, RKE, AMR, ZigBee, LTE, cellular, UMTS
- SDARS first stage LNA
- FM radio and mobile TV
- Bluetooth applications
Q & A
- What is the polarity of the BFU730F,115 transistor?
The BFU730F,115 is an NPN transistor.
- What is the maximum collector current of the BFU730F,115?
The maximum collector current is 30mA.
- What is the noise figure of the BFU730F,115 at 5.8 GHz?
The noise figure is 0.8 dB at 5.8 GHz.
- What is the frequency transition of the BFU730F,115?
The frequency transition is 55GHz.
- What is the package style of the BFU730F,115?
The package style is SOT-343F-4.
- What is the mounting method for the BFU730F,115?
The mounting method is surface mount.
- What is the operating temperature range of the BFU730F,115?
The operating temperature range is from -65°C to 150°C.
- What are some common applications of the BFU730F,115?
Common applications include low noise amplifiers, microwave communications systems, Ka band oscillators, and GPS, among others.
- What technology is used in the BFU730F,115 transistor?
The transistor uses 110 GHz fT silicon germanium technology.
- Is the BFU730F,115 suitable for high-speed applications?
Yes, it is designed for high-speed, low-noise applications.
