Overview
The BFU520XRVL is an NPN wideband silicon RF transistor produced by NXP USA Inc. It is part of the BFU5 family of transistors, designed for high-speed, low-noise applications. This transistor is suitable for small signal to medium power applications up to 2 GHz, making it versatile for various RF and microwave applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCB) | Open Emitter | - | - | 24 | V |
| Collector-Emitter Voltage (VCE) | Open Base | - | - | 12 | V |
| Emitter-Base Voltage (VEB) | Open Collector | - | - | 2 | V |
| Collector Current (IC) | - | - | 5 | 30 | mA |
| Total Power Dissipation (Ptot) | Tsp ≤ 87°C | - | - | 450 | mW |
| DC Current Gain (hFE) | IC = 5 mA; VCE = 8 V | 60 | 95 | 200 | - |
| Collector Capacitance (Cc) | VCB = 8 V; f = 1 MHz | - | 0.52 | - | pF |
| Transition Frequency (fT) | IC = 10 mA; VCE = 8 V; f = 900 MHz | - | 10.5 | - | GHz |
Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified, ensuring reliability in automotive applications
- Minimum noise figure (NFmin) of 0.7 dB at 900 MHz
- Maximum stable gain of 20 dB at 900 MHz
- 11 GHz fT silicon technology for high-frequency performance
Applications
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for Industrial, Scientific, and Medical (ISM) applications
- ISM band oscillators
- Applications requiring high supply voltages and high breakdown voltages
Q & A
- What is the maximum collector-emitter voltage for the BFU520XRVL?
The maximum collector-emitter voltage (VCE) for the BFU520XRVL is 12 V when the base is open, and 24 V when the base is shorted.
- What is the typical DC current gain (hFE) of the BFU520XRVL?
The typical DC current gain (hFE) is 95 when the collector current (IC) is 5 mA and the collector-emitter voltage (VCE) is 8 V.
- What is the transition frequency (fT) of the BFU520XRVL?
The transition frequency (fT) is 10.5 GHz when the collector current (IC) is 10 mA and the collector-emitter voltage (VCE) is 8 V.
- What are the typical applications of the BFU520XRVL?
The BFU520XRVL is typically used in broadband amplifiers up to 2 GHz, low noise amplifiers for ISM applications, and ISM band oscillators.
- Is the BFU520XRVL AEC-Q101 qualified?
Yes, the BFU520XRVL is AEC-Q101 qualified, making it suitable for automotive applications).
- What is the maximum total power dissipation for the BFU520XRVL?
The maximum total power dissipation (Ptot) is 450 mW when the temperature at the solder point of the collector lead (Tsp) is ≤ 87°C).
- What is the minimum noise figure (NFmin) of the BFU520XRVL at 900 MHz?
The minimum noise figure (NFmin) at 900 MHz is 0.7 dB).
- What package type is the BFU520XRVL available in?
The BFU520XRVL is available in a surface mount SOT-143R package).
- What is the maximum collector current (IC) for the BFU520XRVL?
The maximum collector current (IC) is 30 mA).
- What is the collector capacitance (Cc) of the BFU520XRVL?
The collector capacitance (Cc) is 0.52 pF when VCB = 8 V and f = 1 MHz).
