BFU520Y115
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NXP USA Inc. BFU520Y115

Manufacturer No:
BFU520Y115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
DUAL NPN WIDEBAND RF TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU520Y is a dual NPN wideband silicon RF transistor produced by NXP USA Inc. It is part of the BFU5 family of transistors and is designed for high-speed, low-noise applications. The transistor is packaged in a plastic, 6-pin SOT363 package, making it suitable for small signal to medium power applications up to 2 GHz.

Key Specifications

ParameterConditionsMinTypMaxUnit
Collector-Base Voltage (VCB)Open Emitter--24V
Collector-Emitter Voltage (VCE)Open Base--12V
Emitter-Base Voltage (VEB)Open Collector--2V
Collector Current (IC)--530mA
Total Power Dissipation (Ptot)Tsp ≤ 87°C--450mW
DC Current Gain (hFE)IC = 5 mA; VCE = 8 V6095200-
Transition Frequency (fT)IC = 10 mA; VCE = 8 V; f = 900 MHz-10-GHz
Noise Figure (NFmin)f = 900 MHz; VCE = 8 V-0.65-dB

Key Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified for automotive applications
  • Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
  • Maximum stable gain of 19 dB at 900 MHz
  • 11 GHz fT silicon technology

Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband differential amplifiers up to 2 GHz
  • Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications
  • ISM band oscillators

Q & A

  1. What is the BFU520Y transistor used for? The BFU520Y is used for high-speed, low-noise applications in RF circuits, such as broadband differential amplifiers and low noise amplifiers for ISM applications.
  2. What is the package type of the BFU520Y transistor? The BFU520Y is packaged in a plastic, 6-pin SOT363 package.
  3. What is the maximum collector-emitter voltage for the BFU520Y? The maximum collector-emitter voltage (VCE) is 12 V when the base is open, and 24 V when the base is shorted.
  4. What is the typical DC current gain (hFE) of the BFU520Y? The typical DC current gain (hFE) is 95 at IC = 5 mA and VCE = 8 V.
  5. Is the BFU520Y AEC-Q101 qualified? Yes, the BFU520Y is AEC-Q101 qualified, making it suitable for automotive applications.
  6. What is the transition frequency (fT) of the BFU520Y? The transition frequency (fT) is 10 GHz at IC = 10 mA and VCE = 8 V.
  7. What is the minimum noise figure (NFmin) of the BFU520Y at 900 MHz? The minimum noise figure (NFmin) is 0.65 dB at 900 MHz.
  8. What are some common applications of the BFU520Y? Common applications include broadband differential amplifiers, low noise amplifiers for ISM applications, and ISM band oscillators.
  9. What is the total power dissipation limit for the BFU520Y? The total power dissipation (Ptot) limit is 450 mW at Tsp ≤ 87°C.
  10. Is the BFU520Y RoHS compliant? Yes, the BFU520Y is RoHS compliant and also halogen-free.

Product Attributes

Transistor Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Frequency - Transition:- 
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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