Overview
The BFG520W/X,115 is a high-performance RF transistor manufactured by NXP USA Inc. This NPN transistor is designed for wideband applications, offering excellent frequency response and low noise figures. It is packaged in a surface-mount SOT-343 Reverse Pinning configuration, making it suitable for a variety of modern electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | BFG520W/X,115 |
| Manufacturer | NXP USA Inc. |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.1dB ~ 2.1dB @ 900MHz |
| Power - Max | 500mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 6V |
| Current - Collector (Ic) (Max) | 70mA |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-343 Reverse Pinning |
| Supplier Device Package | 4-SO |
Key Features
- High Frequency Operation: The BFG520W/X,115 operates up to 9GHz, making it suitable for high-frequency RF applications.
- Low Noise Figure: With a noise figure of 1.1dB to 2.1dB at 900MHz, this transistor is ideal for applications requiring low noise.
- High Power Handling: It can handle up to 500mW of power, ensuring robust performance in demanding RF circuits.
- Compact Packaging: The SOT-343 Reverse Pinning package is compact and suitable for surface-mount technology, facilitating easy integration into modern PCB designs.
- High DC Current Gain: A minimum DC current gain (hFE) of 60 at 20mA and 6V ensures reliable amplification in various RF circuits.
Applications
The BFG520W/X,115 is versatile and can be used in a variety of RF applications, including:
- Wireless Communication Systems: Suitable for use in cellular base stations, wireless local area networks (WLAN), and other wireless communication systems.
- RF Amplifiers: Ideal for use in RF amplifier circuits due to its high frequency operation and low noise figure.
- Microwave Circuits: Can be used in microwave circuits requiring high-frequency operation and low noise.
- Industrial and Medical Devices: Applicable in various industrial and medical devices that require reliable RF performance.
Q & A
- What is the maximum collector-emitter breakdown voltage of the BFG520W/X,115?
The maximum collector-emitter breakdown voltage is 15V. - What is the frequency transition of the BFG520W/X,115?
The frequency transition is up to 9GHz. - What is the noise figure of the BFG520W/X,115 at 900MHz?
The noise figure is 1.1dB to 2.1dB at 900MHz. - What is the maximum power handling of the BFG520W/X,115?
The maximum power handling is 500mW. - What is the DC current gain (hFE) of the BFG520W/X,115?
The minimum DC current gain (hFE) is 60 at 20mA and 6V. - What is the operating temperature range of the BFG520W/X,115?
The operating temperature is up to 175°C (TJ). - What is the package type of the BFG520W/X,115?
The package type is SOT-343 Reverse Pinning. - What are some common applications of the BFG520W/X,115?
Common applications include wireless communication systems, RF amplifiers, microwave circuits, and industrial and medical devices. - Is the BFG520W/X,115 suitable for surface-mount technology?
Yes, it is designed for surface-mount technology. - What is the maximum collector current of the BFG520W/X,115?
The maximum collector current is 70mA.
