Overview
The BFU550VL is a high-performance NPN silicon RF transistor manufactured by NXP USA Inc. This transistor is designed for high-speed, low-noise applications and is packaged in a 4-pin SOT-143B surface mount package. It is part of the BFU5 family of transistors, known for their reliability and efficiency in various RF applications.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | NPN |
Package / Case | SOT-143B, TO-253-4, TO-253AA |
Mounting Type | Surface Mount |
Operating Temperature | -40°C ~ 150°C (TJ) |
Frequency - Transition | 11 GHz |
Noise Figure (dB Typ @ f) | 1.3 dB @ 1.8 GHz |
Current - Collector (Ic) (Max) | 50 mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 15 mA, 8 V |
Voltage - Collector Emitter Breakdown (Max) | 12 V |
Power - Max | 450 mW |
Gain | 15 dB |
Key Features
- High-speed and low-noise performance, making it suitable for a wide range of RF applications.
- Compact SOT-143B package, ideal for surface mount technology.
- Wide operating temperature range from -40°C to 150°C.
- Low noise figure of 1.3 dB at 1.8 GHz.
- High DC current gain (hFE) of 60 at 15 mA and 8 V.
- Maximum collector-emitter breakdown voltage of 12 V.
Applications
The BFU550VL transistor is designed for various high-frequency applications, including:
- RF amplifiers and oscillators.
- Wireless communication systems.
- Radar and microwave systems.
- Aerospace and defense electronics.
- High-speed data transmission systems.
Q & A
- What is the transistor type of the BFU550VL?
The BFU550VL is an NPN silicon RF transistor. - What is the package type of the BFU550VL?
The BFU550VL is packaged in a 4-pin SOT-143B surface mount package. - What is the maximum operating temperature of the BFU550VL?
The maximum operating temperature is 150°C (TJ). - What is the noise figure of the BFU550VL at 1.8 GHz?
The noise figure is 1.3 dB at 1.8 GHz. - What is the maximum collector current of the BFU550VL?
The maximum collector current is 50 mA. - What is the DC current gain (hFE) of the BFU550VL?
The DC current gain (hFE) is 60 at 15 mA and 8 V. - What is the maximum collector-emitter breakdown voltage of the BFU550VL?
The maximum collector-emitter breakdown voltage is 12 V. - What are the typical applications of the BFU550VL?
The typical applications include RF amplifiers, wireless communication systems, radar and microwave systems, aerospace and defense electronics, and high-speed data transmission systems. - Is the BFU550VL RoHS compliant?
Yes, the BFU550VL is RoHS compliant. - What is the transition frequency of the BFU550VL?
The transition frequency is 11 GHz.