BFU660F,115
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NXP USA Inc. BFU660F,115

Manufacturer No:
BFU660F,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 5.5V 21GHZ 4DFP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU660F,115 is an NPN silicon microwave transistor manufactured by NXP USA Inc. This transistor is designed for high-speed, low-noise applications and is packaged in a plastic, 4-pin dual-emitter SOT343F package. It is particularly suited for use in microwave and RF circuits where high performance and reliability are critical.

Key Specifications

ParameterValue
Transistor TypeNPN
PackageSOT343F (4-pin dual-emitter)
Frequency RangeUp to several GHz (exact range depends on specific application and configuration)
Maximum Collector CurrentTypically 100 mA (check datasheet for precise value)
Maximum Collector-Emitter VoltageTypically 12 V (check datasheet for precise value)
Maximum Collector-Base VoltageTypically 12 V (check datasheet for precise value)
Noise FigureLow noise figure, suitable for high sensitivity applications

Key Features

  • High-speed operation suitable for microwave and RF applications.
  • Low noise figure, enhancing the sensitivity and performance of the circuit.
  • Compact SOT343F package, ideal for space-constrained designs.
  • High reliability and stability in various operating conditions.

Applications

The BFU660F,115 transistor is widely used in various high-frequency applications, including:

  • Microwave amplifiers and oscillators.
  • RF amplifiers and receivers.
  • Wireless communication systems.
  • Radar and satellite communication systems.
  • Medical and industrial microwave equipment.

Q & A

  1. What is the BFU660F,115 transistor used for? The BFU660F,115 is used in high-speed, low-noise applications such as microwave and RF circuits.
  2. What package type does the BFU660F,115 come in? It comes in a plastic, 4-pin dual-emitter SOT343F package.
  3. What are the typical maximum voltages for the BFU660F,115? The typical maximum collector-emitter and collector-base voltages are 12 V each.
  4. What is the noise figure of the BFU660F,115? The BFU660F,115 has a low noise figure, making it suitable for high sensitivity applications.
  5. What are some common applications of the BFU660F,115? Common applications include microwave amplifiers, RF amplifiers, wireless communication systems, and radar systems.
  6. Where can I find detailed specifications for the BFU660F,115? Detailed specifications can be found in the datasheet available on NXP’s official website or through distributors like Digi-Key and Mouser.
  7. What is the maximum collector current for the BFU660F,115? The maximum collector current is typically 100 mA.
  8. Is the BFU660F,115 suitable for high-frequency applications? Yes, it is designed for high-frequency applications up to several GHz.
  9. What are the advantages of using the BFU660F,115 in RF circuits? The advantages include high-speed operation, low noise figure, and high reliability.
  10. Can the BFU660F,115 be used in medical equipment? Yes, it can be used in medical microwave equipment due to its high performance and reliability.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):5.5V
Frequency - Transition:21GHz
Noise Figure (dB Typ @ f):0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain:12dB ~ 21dB
Power - Max:225mW
DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 10mA, 2V
Current - Collector (Ic) (Max):60mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343F
Supplier Device Package:4-DFP
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Similar Products

Part Number BFU660F,115 BFU690F,115 BFU760F,115 BFU668F,115 BFU610F,115 BFU630F,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Obsolete Active Active
Transistor Type NPN NPN NPN - NPN NPN
Voltage - Collector Emitter Breakdown (Max) 5.5V 5.5V 2.8V - 5.5V 5.5V
Frequency - Transition 21GHz 18GHz 45GHz - 15GHz 21GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz - 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
Gain 12dB ~ 21dB 15.5dB ~ 18.5dB - - 13.5dB ~ 23.5dB 13dB ~ 22.5dB
Power - Max 225mW 230mW 220mW - 136mW 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 10mA, 2V 90 @ 20mA, 2V 155 @ 10mA, 2V - 90 @ 1mA, 2V 90 @ 5mA, 2V
Current - Collector (Ic) (Max) 60mA 100mA 70mA - 10mA 30mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) - 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-343F SOT-343F SOT-343F SOT-343F SOT-343F SOT-343F
Supplier Device Package 4-DFP 4-DFP 4-DFP 4-DFP 4-DFP 4-DFP

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