Overview
The BFU590GX is an NPN silicon microwave transistor manufactured by NXP USA Inc. This transistor is designed for high-speed, medium power applications and is packaged in a plastic, 4-pin SOT223 package. It is part of the BFU5 family of transistors, making it suitable for a range of applications from small signal to medium power up to 2 GHz.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCB) | Open Emitter | - | - | 24 | V |
| Collector-Emitter Voltage (VCE) | Open Base | - | - | 12 | V |
| Emitter-Base Voltage (VEB) | Open Collector | - | - | 2 | V |
| Collector Current (IC) | - | 80 | - | 200 | mA |
| Total Power Dissipation (Ptot) | T = 90°C | - | - | 2000 | mW |
| DC Current Gain (hFE) | I = 80 mA, VCE = 8 V | 60 | 95 | 130 | - |
| Collector Capacitance (Cc) | VCE = 8 V, f = 1 MHz | - | 1.9 | - | pF |
| Transition Frequency (fT) | I = 80 mA, VCE = 8 V, f = 900 MHz | - | 8.5 | - | GHz |
| Maximum Power Gain (Gp(max)) | I = 80 mA, VCE = 8 V, f = 900 MHz | - | 13 | - | dB |
| Output Power at 1 dB Gain Compression (P1dB) | I = 80 mA, VCE = 8 V, Z = 50 Ω | - | 21.5 | - | dBm |
Key Features
- Medium power, high linearity, and high breakdown voltage RF transistor.
- AEC-Q101 qualified, ensuring reliability in automotive applications.
- Maximum stable gain of 13 dB at 900 MHz and output power of 21.5 dBm at 1 dB gain compression.
- Transition frequency of 8.5 GHz, making it suitable for high-frequency applications.
- Packaged in a plastic, 4-pin SOT223 package with increased heatsink for efficient thermal management).
Applications
- Automotive applications, particularly in systems requiring high reliability and performance).
- Broadband amplifiers and medium power amplifiers, such as those used in ISM (Industrial, Scientific, and Medical) applications).
- Large signal amplifiers for various wireless communication systems).
- General RF amplification in systems up to 2 GHz).
Q & A
- What is the BFU590GX transistor used for?
The BFU590GX is used for high-speed, medium power RF applications, including automotive, broadband amplifiers, and ISM applications).
- What is the package type of the BFU590GX?
The BFU590GX is packaged in a plastic, 4-pin SOT223 package).
- What is the maximum collector-emitter voltage of the BFU590GX?
The maximum collector-emitter voltage is 12 V).
- What is the transition frequency of the BFU590GX?
The transition frequency is 8.5 GHz).
- Is the BFU590GX AEC-Q101 qualified?
Yes, the BFU590GX is AEC-Q101 qualified, making it suitable for automotive applications).
- What is the maximum power dissipation of the BFU590GX?
The maximum total power dissipation is 2000 mW at 90°C).
- What are the typical DC current gain values for the BFU590GX?
The typical DC current gain (hFE) is 95, with a range of 60 to 130).
- What is the output power at 1 dB gain compression for the BFU590GX?
The output power at 1 dB gain compression is 21.5 dBm).
- Is the BFU590GX RoHS compliant?
Yes, the BFU590GX is RoHS3 compliant).
- What is the moisture sensitivity level (MSL) of the BFU590GX?
The BFU590GX has an MSL of 1 (unlimited)).
