BFU590QX
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NXP USA Inc. BFU590QX

Manufacturer No:
BFU590QX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 8GHZ SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU590QX is an NPN wideband silicon RF transistor produced by NXP USA Inc. This transistor is designed for high-frequency applications, offering excellent performance in terms of gain, noise figure, and linearity. It is packaged in a SOT89-3 package, making it suitable for a variety of RF and microwave circuits.

Key Specifications

ParameterValue
TypeNPN RF Transistor
PackageSOT89-3
Collector-Emitter Voltage (Vce)12 V
Collector-Base Voltage (Vcb)12 V
Emitter-Base Voltage (Veb)3 V
Collector Current (Ic)500 mA
Transition Frequency (ft)8 GHz
Power Dissipation (Ptot)1.25 W

Key Features

  • High transition frequency (ft) of 8 GHz, making it suitable for high-frequency applications.
  • Low noise figure and high gain, ideal for RF amplifiers and oscillators.
  • Compact SOT89-3 package for space-efficient designs.
  • High collector current capability of up to 500 mA.
  • Good linearity and stability in RF circuits.

Applications

The BFU590QX is widely used in various RF and microwave applications, including:

  • RF amplifiers and pre-amplifiers.
  • Oscillators and frequency multipliers.
  • Microwave circuits and systems.
  • Wireless communication systems.
  • Medical and industrial RF equipment.

Q & A

  1. What is the transition frequency of the BFU590QX?
    The transition frequency (ft) of the BFU590QX is 8 GHz.
  2. What is the maximum collector current of the BFU590QX?
    The maximum collector current (Ic) is 500 mA.
  3. What package type is the BFU590QX available in?
    The BFU590QX is available in a SOT89-3 package.
  4. What are the typical applications of the BFU590QX?
    The BFU590QX is used in RF amplifiers, oscillators, microwave circuits, wireless communication systems, and medical/industrial RF equipment.
  5. What is the collector-emitter voltage (Vce) of the BFU590QX?
    The collector-emitter voltage (Vce) is 12 V.
  6. Is the BFU590QX suitable for high-frequency applications?
    Yes, the BFU590QX is designed for high-frequency applications due to its high transition frequency and low noise figure.
  7. What is the power dissipation (Ptot) of the BFU590QX?
    The power dissipation (Ptot) is 1.25 W.
  8. Is the BFU590QX RoHS compliant?
    Yes, the BFU590QX is RoHS compliant.
  9. Where can I find detailed specifications for the BFU590QX?
    Detailed specifications can be found on the official NXP website, Digi-Key, Mouser Electronics, and other authorized distributors.
  10. What is the emitter-base voltage (Veb) of the BFU590QX?
    The emitter-base voltage (Veb) is 3 V.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):- 
Gain:6.5dB
Power - Max:2W
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 80mA, 8V
Current - Collector (Ic) (Max):200mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
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In Stock

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Similar Products

Part Number BFU590QX BFU580QX BFU590GX
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V
Frequency - Transition 8GHz 10.5GHz 8.5GHz
Noise Figure (dB Typ @ f) - 1.3dB @ 1.8GHz -
Gain 6.5dB 8.5dB 8dB
Power - Max 2W 1W 2W
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 80mA, 8V 60 @ 30mA, 8V 60 @ 80mA, 8V
Current - Collector (Ic) (Max) 200mA 60mA 200mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-261-4, TO-261AA
Supplier Device Package SOT-89-3 SOT-89-3 SC-73

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