BFU590QX
  • Share:

NXP USA Inc. BFU590QX

Manufacturer No:
BFU590QX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 8GHZ SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU590QX is an NPN wideband silicon RF transistor produced by NXP USA Inc. This transistor is designed for high-frequency applications, offering excellent performance in terms of gain, noise figure, and linearity. It is packaged in a SOT89-3 package, making it suitable for a variety of RF and microwave circuits.

Key Specifications

ParameterValue
TypeNPN RF Transistor
PackageSOT89-3
Collector-Emitter Voltage (Vce)12 V
Collector-Base Voltage (Vcb)12 V
Emitter-Base Voltage (Veb)3 V
Collector Current (Ic)500 mA
Transition Frequency (ft)8 GHz
Power Dissipation (Ptot)1.25 W

Key Features

  • High transition frequency (ft) of 8 GHz, making it suitable for high-frequency applications.
  • Low noise figure and high gain, ideal for RF amplifiers and oscillators.
  • Compact SOT89-3 package for space-efficient designs.
  • High collector current capability of up to 500 mA.
  • Good linearity and stability in RF circuits.

Applications

The BFU590QX is widely used in various RF and microwave applications, including:

  • RF amplifiers and pre-amplifiers.
  • Oscillators and frequency multipliers.
  • Microwave circuits and systems.
  • Wireless communication systems.
  • Medical and industrial RF equipment.

Q & A

  1. What is the transition frequency of the BFU590QX?
    The transition frequency (ft) of the BFU590QX is 8 GHz.
  2. What is the maximum collector current of the BFU590QX?
    The maximum collector current (Ic) is 500 mA.
  3. What package type is the BFU590QX available in?
    The BFU590QX is available in a SOT89-3 package.
  4. What are the typical applications of the BFU590QX?
    The BFU590QX is used in RF amplifiers, oscillators, microwave circuits, wireless communication systems, and medical/industrial RF equipment.
  5. What is the collector-emitter voltage (Vce) of the BFU590QX?
    The collector-emitter voltage (Vce) is 12 V.
  6. Is the BFU590QX suitable for high-frequency applications?
    Yes, the BFU590QX is designed for high-frequency applications due to its high transition frequency and low noise figure.
  7. What is the power dissipation (Ptot) of the BFU590QX?
    The power dissipation (Ptot) is 1.25 W.
  8. Is the BFU590QX RoHS compliant?
    Yes, the BFU590QX is RoHS compliant.
  9. Where can I find detailed specifications for the BFU590QX?
    Detailed specifications can be found on the official NXP website, Digi-Key, Mouser Electronics, and other authorized distributors.
  10. What is the emitter-base voltage (Veb) of the BFU590QX?
    The emitter-base voltage (Veb) is 3 V.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):- 
Gain:6.5dB
Power - Max:2W
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 80mA, 8V
Current - Collector (Ic) (Max):200mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
0 Remaining View Similar

In Stock

$1.11
842

Please send RFQ , we will respond immediately.

Similar Products

Part Number BFU590QX BFU580QX BFU590GX
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V
Frequency - Transition 8GHz 10.5GHz 8.5GHz
Noise Figure (dB Typ @ f) - 1.3dB @ 1.8GHz -
Gain 6.5dB 8.5dB 8dB
Power - Max 2W 1W 2W
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 80mA, 8V 60 @ 30mA, 8V 60 @ 80mA, 8V
Current - Collector (Ic) (Max) 200mA 60mA 200mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-261-4, TO-261AA
Supplier Device Package SOT-89-3 SOT-89-3 SC-73

Related Product By Categories

MMBTH10LT1G
MMBTH10LT1G
onsemi
RF TRANS NPN 25V 650MHZ SOT23-3
BFU690F,115
BFU690F,115
NXP USA Inc.
RF TRANS NPN 5.5V 18GHZ 4DFP
BFU530WX
BFU530WX
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
BFU520AR
BFU520AR
NXP USA Inc.
RF TRANS NPN 12V 10GHZ TO236AB
MMBTH10-4LT1G
MMBTH10-4LT1G
onsemi
RF TRANS NPN 25V 800MHZ SOT23-3
BFU520235
BFU520235
NXP USA Inc.
NPN RF TRANSISTOR
BLF6G20S-45112
BLF6G20S-45112
NXP USA Inc.
RF POWER TRANSISTORS
BFU550AVL
BFU550AVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
BFG480W,135
BFG480W,135
NXP USA Inc.
RF TRANS NPN 4.5V 21GHZ CMPAK-4
BFQ540,115
BFQ540,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT89-3
BFG135,115
BFG135,115
NXP USA Inc.
RF TRANS NPN 15V 7GHZ SOT223
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
S9S12P32J0CFTR
S9S12P32J0CFTR
NXP USA Inc.
IC MCU 16BIT 32KB FLASH 48QFN
SPC5777CCK3MME3
SPC5777CCK3MME3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 416MAPBGA
TJA1049TK/3/1Z
TJA1049TK/3/1Z
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8HVSON
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74HC2G08DC/C125
74HC2G08DC/C125
NXP USA Inc.
IC GATE AND 2CH 2-INP 8VSSOP
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
NT3H2111W0FT1X
NT3H2111W0FT1X
NXP USA Inc.
IC RFID TRANSP 13.56MHZ 8SO