PMV45EN,215
  • Share:

NXP USA Inc. PMV45EN,215

Manufacturer No:
PMV45EN,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5.4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV45EN,215 is a Small Signal Field-Effect Transistor (FET) produced by NXP USA Inc. It is optimized for high-speed and low-voltage operations, making it suitable for various industrial and consumer applications. This N-channel TrenchMOS logic level FET utilizes advanced TrenchMOS technology, ensuring very fast switching and logic-level compatibility.

Key Specifications

Parameter Value Unit
Package/Case SOT23 (TO-236AB) -
Channel Type N-Channel -
V DS [max] 30 V
V GS [max] 20 V
R DSon [max] @ V GS = 10 V 42
R DSon [max] @ V GS = 4.5 V; @25 C 54
T j [max] 150 °C
I D [max] 5.4 A
Q GD [typ] 1.9 nC
P tot [max] 2 W

Key Features

  • Logic-level compatible: The PMV45EN,215 is designed to operate with logic-level gate drive voltages, making it easy to integrate into various systems.
  • Very fast switching: Utilizing TrenchMOS technology, this FET offers very fast switching times, which is crucial for high-speed applications.
  • Compact package: The SOT23 (TO-236AB) package is compact, making it suitable for applications where space is limited.
  • Easily integratable into existing systems: With various output options and a compact size, the PMV45EN,215 can be easily integrated into existing systems.

Applications

  • Industrial automation: Suitable for use in robotics, machine tools, and packaging machinery due to its high accuracy and reliability.
  • Battery management: Can be used in battery management systems for high-speed switching applications.
  • Energy management: Useful in energy management systems to monitor and control energy consumption in buildings and factories.
  • Environmental monitoring: Can be used in environmental monitoring systems to measure parameters such as temperature, humidity, and air quality.
  • Medical devices: Suitable for use in medical devices like patient monitors and diagnostic equipment to monitor vital signs and other health parameters.
  • Agriculture: Can be used in agricultural applications for monitoring and controlling parameters such as soil moisture and temperature.

Q & A

  1. What is the PMV45EN,215?

    The PMV45EN,215 is a Small Signal Field-Effect Transistor (FET) produced by NXP USA Inc., optimized for high-speed and low-voltage operations.

  2. What package does the PMV45EN,215 use?

    The PMV45EN,215 uses the SOT23 (TO-236AB) package.

  3. What are the maximum drain-source voltage and gate-source voltage for the PMV45EN,215?

    The maximum drain-source voltage (V DS) is 30 V, and the maximum gate-source voltage (V GS) is 20 V.

  4. What is the maximum drain current for the PMV45EN,215?

    The maximum drain current (I D) is 5.4 A.

  5. What are some key applications of the PMV45EN,215?

    It is used in industrial automation, battery management, energy management, environmental monitoring, medical devices, and agricultural applications.

  6. Is the PMV45EN,215 still in production?

    No, the PMV45EN,215 has been discontinued and is no longer manufactured.

  7. What technology does the PMV45EN,215 use?

    The PMV45EN,215 uses TrenchMOS technology, which provides very fast switching and logic-level compatibility.

  8. What are the advantages of using the PMV45EN,215?

    It offers high accuracy and reliability, fast switching times, and is easily integratable into existing systems.

  9. What are the potential disadvantages of the PMV45EN,215?

    It has a limited operating temperature range and is sensitive to moisture and humidity.

  10. Where can I find detailed specifications and datasheets for the PMV45EN,215?

    Detailed specifications and datasheets can be found on the official NXP website, as well as on distributor websites like Digi-Key and Nexperia.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:42mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):280mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.06
739

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PMV45EN,215 PMV45EN2215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 42mOhm @ 2A, 10V -
Vgs(th) (Max) @ Id 2V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V -
FET Feature - -
Power Dissipation (Max) 280mW (Tj) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package SOT-23 (TO-236AB) -
Package / Case TO-236-3, SC-59, SOT-23-3 -

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
BC817DPN/DG/B2115
BC817DPN/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BF909A215
BF909A215
NXP USA Inc.
MOSFET N-CH SOT-143B
MIMXRT1176CVM8A
MIMXRT1176CVM8A
NXP USA Inc.
IC MCU 32BIT EXT MEM 289MAPBGA
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
P89LPC954FBD48,151
P89LPC954FBD48,151
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
MCZ33904C5EKR2
MCZ33904C5EKR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 32SOIC
74HC240D/C118
74HC240D/C118
NXP USA Inc.
IC BUFFER INVERT 6V 20SO
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
BZV55-C20135
BZV55-C20135
NXP USA Inc.
NOW NEXPERIA BZV55-C20 - ZENER D
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC