PMV45EN,215
  • Share:

NXP USA Inc. PMV45EN,215

Manufacturer No:
PMV45EN,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5.4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV45EN,215 is a Small Signal Field-Effect Transistor (FET) produced by NXP USA Inc. It is optimized for high-speed and low-voltage operations, making it suitable for various industrial and consumer applications. This N-channel TrenchMOS logic level FET utilizes advanced TrenchMOS technology, ensuring very fast switching and logic-level compatibility.

Key Specifications

Parameter Value Unit
Package/Case SOT23 (TO-236AB) -
Channel Type N-Channel -
V DS [max] 30 V
V GS [max] 20 V
R DSon [max] @ V GS = 10 V 42
R DSon [max] @ V GS = 4.5 V; @25 C 54
T j [max] 150 °C
I D [max] 5.4 A
Q GD [typ] 1.9 nC
P tot [max] 2 W

Key Features

  • Logic-level compatible: The PMV45EN,215 is designed to operate with logic-level gate drive voltages, making it easy to integrate into various systems.
  • Very fast switching: Utilizing TrenchMOS technology, this FET offers very fast switching times, which is crucial for high-speed applications.
  • Compact package: The SOT23 (TO-236AB) package is compact, making it suitable for applications where space is limited.
  • Easily integratable into existing systems: With various output options and a compact size, the PMV45EN,215 can be easily integrated into existing systems.

Applications

  • Industrial automation: Suitable for use in robotics, machine tools, and packaging machinery due to its high accuracy and reliability.
  • Battery management: Can be used in battery management systems for high-speed switching applications.
  • Energy management: Useful in energy management systems to monitor and control energy consumption in buildings and factories.
  • Environmental monitoring: Can be used in environmental monitoring systems to measure parameters such as temperature, humidity, and air quality.
  • Medical devices: Suitable for use in medical devices like patient monitors and diagnostic equipment to monitor vital signs and other health parameters.
  • Agriculture: Can be used in agricultural applications for monitoring and controlling parameters such as soil moisture and temperature.

Q & A

  1. What is the PMV45EN,215?

    The PMV45EN,215 is a Small Signal Field-Effect Transistor (FET) produced by NXP USA Inc., optimized for high-speed and low-voltage operations.

  2. What package does the PMV45EN,215 use?

    The PMV45EN,215 uses the SOT23 (TO-236AB) package.

  3. What are the maximum drain-source voltage and gate-source voltage for the PMV45EN,215?

    The maximum drain-source voltage (V DS) is 30 V, and the maximum gate-source voltage (V GS) is 20 V.

  4. What is the maximum drain current for the PMV45EN,215?

    The maximum drain current (I D) is 5.4 A.

  5. What are some key applications of the PMV45EN,215?

    It is used in industrial automation, battery management, energy management, environmental monitoring, medical devices, and agricultural applications.

  6. Is the PMV45EN,215 still in production?

    No, the PMV45EN,215 has been discontinued and is no longer manufactured.

  7. What technology does the PMV45EN,215 use?

    The PMV45EN,215 uses TrenchMOS technology, which provides very fast switching and logic-level compatibility.

  8. What are the advantages of using the PMV45EN,215?

    It offers high accuracy and reliability, fast switching times, and is easily integratable into existing systems.

  9. What are the potential disadvantages of the PMV45EN,215?

    It has a limited operating temperature range and is sensitive to moisture and humidity.

  10. Where can I find detailed specifications and datasheets for the PMV45EN,215?

    Detailed specifications and datasheets can be found on the official NXP website, as well as on distributor websites like Digi-Key and Nexperia.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:42mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):280mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.06
739

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number PMV45EN,215 PMV45EN2215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 42mOhm @ 2A, 10V -
Vgs(th) (Max) @ Id 2V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V -
FET Feature - -
Power Dissipation (Max) 280mW (Tj) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package SOT-23 (TO-236AB) -
Package / Case TO-236-3, SC-59, SOT-23-3 -

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

PCF85063TP/1Z
PCF85063TP/1Z
NXP USA Inc.
IC RTC CLK/CALENDAR I2C 8-SON
SPC5777CCK3MME3
SPC5777CCK3MME3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 416MAPBGA
MIMX8ML4CVNKZAB
MIMX8ML4CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUADLITE BGA
74LVC1G17GV-Q100125
74LVC1G17GV-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74HC240D/C118
74HC240D/C118
NXP USA Inc.
IC BUFFER INVERT 6V 20SO
74HCT14D/S400118
74HCT14D/S400118
NXP USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
MC33FS4500CAER2
MC33FS4500CAER2
NXP USA Inc.
SYSTEM BASIS CHIP LINEAR 0.5A V
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
TLVH431CDBZR,215
TLVH431CDBZR,215
NXP USA Inc.
IC VREF SHUNT ADJ 1.5% TO236AB
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD