PMV45EN,215
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NXP USA Inc. PMV45EN,215

Manufacturer No:
PMV45EN,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5.4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV45EN,215 is a Small Signal Field-Effect Transistor (FET) produced by NXP USA Inc. It is optimized for high-speed and low-voltage operations, making it suitable for various industrial and consumer applications. This N-channel TrenchMOS logic level FET utilizes advanced TrenchMOS technology, ensuring very fast switching and logic-level compatibility.

Key Specifications

Parameter Value Unit
Package/Case SOT23 (TO-236AB) -
Channel Type N-Channel -
V DS [max] 30 V
V GS [max] 20 V
R DSon [max] @ V GS = 10 V 42 mΩ
R DSon [max] @ V GS = 4.5 V; @25 C 54 mΩ
T j [max] 150 °C
I D [max] 5.4 A
Q GD [typ] 1.9 nC
P tot [max] 2 W

Key Features

  • Logic-level compatible: The PMV45EN,215 is designed to operate with logic-level gate drive voltages, making it easy to integrate into various systems.
  • Very fast switching: Utilizing TrenchMOS technology, this FET offers very fast switching times, which is crucial for high-speed applications.
  • Compact package: The SOT23 (TO-236AB) package is compact, making it suitable for applications where space is limited.
  • Easily integratable into existing systems: With various output options and a compact size, the PMV45EN,215 can be easily integrated into existing systems.

Applications

  • Industrial automation: Suitable for use in robotics, machine tools, and packaging machinery due to its high accuracy and reliability.
  • Battery management: Can be used in battery management systems for high-speed switching applications.
  • Energy management: Useful in energy management systems to monitor and control energy consumption in buildings and factories.
  • Environmental monitoring: Can be used in environmental monitoring systems to measure parameters such as temperature, humidity, and air quality.
  • Medical devices: Suitable for use in medical devices like patient monitors and diagnostic equipment to monitor vital signs and other health parameters.
  • Agriculture: Can be used in agricultural applications for monitoring and controlling parameters such as soil moisture and temperature.

Q & A

  1. What is the PMV45EN,215?

    The PMV45EN,215 is a Small Signal Field-Effect Transistor (FET) produced by NXP USA Inc., optimized for high-speed and low-voltage operations.

  2. What package does the PMV45EN,215 use?

    The PMV45EN,215 uses the SOT23 (TO-236AB) package.

  3. What are the maximum drain-source voltage and gate-source voltage for the PMV45EN,215?

    The maximum drain-source voltage (V DS) is 30 V, and the maximum gate-source voltage (V GS) is 20 V.

  4. What is the maximum drain current for the PMV45EN,215?

    The maximum drain current (I D) is 5.4 A.

  5. What are some key applications of the PMV45EN,215?

    It is used in industrial automation, battery management, energy management, environmental monitoring, medical devices, and agricultural applications.

  6. Is the PMV45EN,215 still in production?

    No, the PMV45EN,215 has been discontinued and is no longer manufactured.

  7. What technology does the PMV45EN,215 use?

    The PMV45EN,215 uses TrenchMOS technology, which provides very fast switching and logic-level compatibility.

  8. What are the advantages of using the PMV45EN,215?

    It offers high accuracy and reliability, fast switching times, and is easily integratable into existing systems.

  9. What are the potential disadvantages of the PMV45EN,215?

    It has a limited operating temperature range and is sensitive to moisture and humidity.

  10. Where can I find detailed specifications and datasheets for the PMV45EN,215?

    Detailed specifications and datasheets can be found on the official NXP website, as well as on distributor websites like Digi-Key and Nexperia.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:42mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):280mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV45EN,215 PMV45EN2215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 42mOhm @ 2A, 10V -
Vgs(th) (Max) @ Id 2V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V -
FET Feature - -
Power Dissipation (Max) 280mW (Tj) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package SOT-23 (TO-236AB) -
Package / Case TO-236-3, SC-59, SOT-23-3 -

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