PMV45EN2215
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NXP USA Inc. PMV45EN2215

Manufacturer No:
PMV45EN2215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV45EN2215 is a small signal N-channel MOSFET produced by NXP USA Inc. This component is part of NXP's extensive range of MOSFETs designed to meet various application needs. Although the specific part number PMV45EN2215 is not widely documented, it is closely related to the PMV45EN2, which shares many characteristics.

Key Specifications

Parameter Value Unit
Type Number PMV45EN2 -
Package SOT23 -
Channel Type N -
VDS (max) 30 V
VGS (max) 20 V
RDSon (max) @ VGS = 10 V 42
RDSon (max) @ VGS = 4.5 V; @25°C 54
Tj (max) 150 °C
ID (max) 5.1 A
QGD (typ) 0.4 nC
QG(tot) (typ) @ VGS = 10 V 3.6 nC
Ptot (max) 0.51 W
VGSth (typ) 1.5 V
Automotive Qualified No -
Ciss (typ) 209 pF
Coss (typ) 50 pF

Key Features

  • Logic Level Compatibility: The PMV45EN2 is logic level compatible, making it suitable for a wide range of digital circuits.
  • Very Fast Switching: This MOSFET features very fast switching times, which is crucial for high-frequency applications.
  • Trench MOSFET Technology: Utilizes Trench MOSFET technology, which enhances power dissipation and reduces on-resistance.
  • High Power Dissipation: The device has an enhanced power dissipation capability of 1115 mW.
  • Relay Driver and High-Speed Line Driver: Suitable for use as a relay driver and high-speed line driver due to its fast switching and low on-resistance.
  • Low-Side Load Switch: Can be used as a low-side load switch in various applications.

Applications

  • Switching Circuits: Ideal for use in switching circuits due to its fast switching times and low on-resistance.
  • Relay Drivers: Suitable for driving relays in automotive and industrial applications.
  • High-Speed Line Drivers: Used in high-speed line driver applications where fast switching is required.
  • Low-Side Load Switches: Can be used as low-side load switches in power management circuits.
  • General Purpose Amplification: Can be used in general-purpose amplification circuits due to its small signal capabilities.

Q & A

  1. What is the maximum drain-source voltage (VDS) for the PMV45EN2?

    The maximum drain-source voltage (VDS) for the PMV45EN2 is 30 V.

  2. What is the maximum gate-source voltage (VGS) for the PMV45EN2?

    The maximum gate-source voltage (VGS) for the PMV45EN2 is 20 V.

  3. What is the typical on-resistance (RDSon) at VGS = 10 V for the PMV45EN2?

    The typical on-resistance (RDSon) at VGS = 10 V for the PMV45EN2 is 42 mΩ.

  4. What is the maximum junction temperature (Tj) for the PMV45EN2?

    The maximum junction temperature (Tj) for the PMV45EN2 is 150°C.

  5. What is the maximum continuous drain current (ID) for the PMV45EN2?

    The maximum continuous drain current (ID) for the PMV45EN2 is 5.1 A.

  6. Is the PMV45EN2 automotive qualified?

    No, the PMV45EN2 is not automotive qualified.

  7. What is the typical input capacitance (Ciss) for the PMV45EN2?

    The typical input capacitance (Ciss) for the PMV45EN2 is 209 pF.

  8. What are some common applications for the PMV45EN2?

    The PMV45EN2 is commonly used in switching circuits, relay drivers, high-speed line drivers, and low-side load switches.

  9. What technology does the PMV45EN2 use?

    The PMV45EN2 uses Trench MOSFET technology.

  10. What is the package type for the PMV45EN2?

    The PMV45EN2 comes in a SOT23 package.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number PMV45EN2215 PMV45EN,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 42mOhm @ 2A, 10V
Vgs(th) (Max) @ Id - 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 9.4 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 350 pF @ 30 V
FET Feature - -
Power Dissipation (Max) - 280mW (Tj)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - SOT-23 (TO-236AB)
Package / Case - TO-236-3, SC-59, SOT-23-3

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