PMV45EN2215
  • Share:

NXP USA Inc. PMV45EN2215

Manufacturer No:
PMV45EN2215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV45EN2215 is a small signal N-channel MOSFET produced by NXP USA Inc. This component is part of NXP's extensive range of MOSFETs designed to meet various application needs. Although the specific part number PMV45EN2215 is not widely documented, it is closely related to the PMV45EN2, which shares many characteristics.

Key Specifications

Parameter Value Unit
Type Number PMV45EN2 -
Package SOT23 -
Channel Type N -
VDS (max) 30 V
VGS (max) 20 V
RDSon (max) @ VGS = 10 V 42
RDSon (max) @ VGS = 4.5 V; @25°C 54
Tj (max) 150 °C
ID (max) 5.1 A
QGD (typ) 0.4 nC
QG(tot) (typ) @ VGS = 10 V 3.6 nC
Ptot (max) 0.51 W
VGSth (typ) 1.5 V
Automotive Qualified No -
Ciss (typ) 209 pF
Coss (typ) 50 pF

Key Features

  • Logic Level Compatibility: The PMV45EN2 is logic level compatible, making it suitable for a wide range of digital circuits.
  • Very Fast Switching: This MOSFET features very fast switching times, which is crucial for high-frequency applications.
  • Trench MOSFET Technology: Utilizes Trench MOSFET technology, which enhances power dissipation and reduces on-resistance.
  • High Power Dissipation: The device has an enhanced power dissipation capability of 1115 mW.
  • Relay Driver and High-Speed Line Driver: Suitable for use as a relay driver and high-speed line driver due to its fast switching and low on-resistance.
  • Low-Side Load Switch: Can be used as a low-side load switch in various applications.

Applications

  • Switching Circuits: Ideal for use in switching circuits due to its fast switching times and low on-resistance.
  • Relay Drivers: Suitable for driving relays in automotive and industrial applications.
  • High-Speed Line Drivers: Used in high-speed line driver applications where fast switching is required.
  • Low-Side Load Switches: Can be used as low-side load switches in power management circuits.
  • General Purpose Amplification: Can be used in general-purpose amplification circuits due to its small signal capabilities.

Q & A

  1. What is the maximum drain-source voltage (VDS) for the PMV45EN2?

    The maximum drain-source voltage (VDS) for the PMV45EN2 is 30 V.

  2. What is the maximum gate-source voltage (VGS) for the PMV45EN2?

    The maximum gate-source voltage (VGS) for the PMV45EN2 is 20 V.

  3. What is the typical on-resistance (RDSon) at VGS = 10 V for the PMV45EN2?

    The typical on-resistance (RDSon) at VGS = 10 V for the PMV45EN2 is 42 mΩ.

  4. What is the maximum junction temperature (Tj) for the PMV45EN2?

    The maximum junction temperature (Tj) for the PMV45EN2 is 150°C.

  5. What is the maximum continuous drain current (ID) for the PMV45EN2?

    The maximum continuous drain current (ID) for the PMV45EN2 is 5.1 A.

  6. Is the PMV45EN2 automotive qualified?

    No, the PMV45EN2 is not automotive qualified.

  7. What is the typical input capacitance (Ciss) for the PMV45EN2?

    The typical input capacitance (Ciss) for the PMV45EN2 is 209 pF.

  8. What are some common applications for the PMV45EN2?

    The PMV45EN2 is commonly used in switching circuits, relay drivers, high-speed line drivers, and low-side load switches.

  9. What technology does the PMV45EN2 use?

    The PMV45EN2 uses Trench MOSFET technology.

  10. What is the package type for the PMV45EN2?

    The PMV45EN2 comes in a SOT23 package.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
35

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PMV45EN2215 PMV45EN,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 42mOhm @ 2A, 10V
Vgs(th) (Max) @ Id - 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 9.4 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 350 pF @ 30 V
FET Feature - -
Power Dissipation (Max) - 280mW (Tj)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - SOT-23 (TO-236AB)
Package / Case - TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
LS1027AXE7PQA
LS1027AXE7PQA
NXP USA Inc.
LS1027A-1500 XT SEC
UJA1023T/2R04/C;51
UJA1023T/2R04/C;51
NXP USA Inc.
IC CAN/LIN I/O SLAVE 16-SOIC
TJA1051T/3/1U
TJA1051T/3/1U
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
74LV08D/C4118
74LV08D/C4118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74HC259N,652
74HC259N,652
NXP USA Inc.
IC ADDRESSABLE LATCH 8BIT 16DIP
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
MMPF0100F9AZES
MMPF0100F9AZES
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56QFN
MC56F82748VLH,557
MC56F82748VLH,557
NXP USA Inc.
DIGITAL SIGNAL CONTROLLER