PMV45EN2215
  • Share:

NXP USA Inc. PMV45EN2215

Manufacturer No:
PMV45EN2215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV45EN2215 is a small signal N-channel MOSFET produced by NXP USA Inc. This component is part of NXP's extensive range of MOSFETs designed to meet various application needs. Although the specific part number PMV45EN2215 is not widely documented, it is closely related to the PMV45EN2, which shares many characteristics.

Key Specifications

Parameter Value Unit
Type Number PMV45EN2 -
Package SOT23 -
Channel Type N -
VDS (max) 30 V
VGS (max) 20 V
RDSon (max) @ VGS = 10 V 42
RDSon (max) @ VGS = 4.5 V; @25°C 54
Tj (max) 150 °C
ID (max) 5.1 A
QGD (typ) 0.4 nC
QG(tot) (typ) @ VGS = 10 V 3.6 nC
Ptot (max) 0.51 W
VGSth (typ) 1.5 V
Automotive Qualified No -
Ciss (typ) 209 pF
Coss (typ) 50 pF

Key Features

  • Logic Level Compatibility: The PMV45EN2 is logic level compatible, making it suitable for a wide range of digital circuits.
  • Very Fast Switching: This MOSFET features very fast switching times, which is crucial for high-frequency applications.
  • Trench MOSFET Technology: Utilizes Trench MOSFET technology, which enhances power dissipation and reduces on-resistance.
  • High Power Dissipation: The device has an enhanced power dissipation capability of 1115 mW.
  • Relay Driver and High-Speed Line Driver: Suitable for use as a relay driver and high-speed line driver due to its fast switching and low on-resistance.
  • Low-Side Load Switch: Can be used as a low-side load switch in various applications.

Applications

  • Switching Circuits: Ideal for use in switching circuits due to its fast switching times and low on-resistance.
  • Relay Drivers: Suitable for driving relays in automotive and industrial applications.
  • High-Speed Line Drivers: Used in high-speed line driver applications where fast switching is required.
  • Low-Side Load Switches: Can be used as low-side load switches in power management circuits.
  • General Purpose Amplification: Can be used in general-purpose amplification circuits due to its small signal capabilities.

Q & A

  1. What is the maximum drain-source voltage (VDS) for the PMV45EN2?

    The maximum drain-source voltage (VDS) for the PMV45EN2 is 30 V.

  2. What is the maximum gate-source voltage (VGS) for the PMV45EN2?

    The maximum gate-source voltage (VGS) for the PMV45EN2 is 20 V.

  3. What is the typical on-resistance (RDSon) at VGS = 10 V for the PMV45EN2?

    The typical on-resistance (RDSon) at VGS = 10 V for the PMV45EN2 is 42 mΩ.

  4. What is the maximum junction temperature (Tj) for the PMV45EN2?

    The maximum junction temperature (Tj) for the PMV45EN2 is 150°C.

  5. What is the maximum continuous drain current (ID) for the PMV45EN2?

    The maximum continuous drain current (ID) for the PMV45EN2 is 5.1 A.

  6. Is the PMV45EN2 automotive qualified?

    No, the PMV45EN2 is not automotive qualified.

  7. What is the typical input capacitance (Ciss) for the PMV45EN2?

    The typical input capacitance (Ciss) for the PMV45EN2 is 209 pF.

  8. What are some common applications for the PMV45EN2?

    The PMV45EN2 is commonly used in switching circuits, relay drivers, high-speed line drivers, and low-side load switches.

  9. What technology does the PMV45EN2 use?

    The PMV45EN2 uses Trench MOSFET technology.

  10. What is the package type for the PMV45EN2?

    The PMV45EN2 comes in a SOT23 package.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
35

Please send RFQ , we will respond immediately.

Same Series
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number PMV45EN2215 PMV45EN,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 42mOhm @ 2A, 10V
Vgs(th) (Max) @ Id - 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 9.4 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 350 pF @ 30 V
FET Feature - -
Power Dissipation (Max) - 280mW (Tj)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - SOT-23 (TO-236AB)
Package / Case - TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1

Related Product By Brand

BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
BFS17W,135
BFS17W,135
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
MKE02Z64VQH4
MKE02Z64VQH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64QFP
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
HEF4053BT/AUJ
HEF4053BT/AUJ
NXP USA Inc.
IC ANLG SWITCH TRPL SPDT 16SOIC
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
SC16C754BIA68,518
SC16C754BIA68,518
NXP USA Inc.
IC UART QUAD W/FIFO 68-PLCC
MC33664ATL1EGR2
MC33664ATL1EGR2
NXP USA Inc.
TRANSFORMER PHYSICAL LAYER
MC56F82748VLH,557
MC56F82748VLH,557
NXP USA Inc.
DIGITAL SIGNAL CONTROLLER
MFRC63002HN,551
MFRC63002HN,551
NXP USA Inc.
IC RFID READER 13.56MHZ 32HVQFN
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX