PBR941
  • Share:

NXP Semiconductors PBR941

Manufacturer No:
PBR941
Manufacturer:
NXP Semiconductors
Package:
Tape & Reel (TR)
Description:
RF SMALL SIGNAL BIPOLAR TRANSIST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBR941 is a UHF wideband transistor manufactured by NXP Semiconductors. It is a silicon NPN transistor packaged in a surface mount 3-pin SOT23 package. This transistor is designed for wideband applications in the GHz range, particularly in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers, and satellite TV-tuners. The PBR941 is known for its small size, low noise, low distortion, and high gain, making it an excellent choice for various communication and instrumentation systems.

Key Specifications

Parameter Conditions Typical Maximum Unit
Feedback Capacitance (Cre) IC = 0; VCB = 6 V; f = 1 MHz 0.3 - pF
Transition Frequency (fT) IC = 15 mA; VCE = 6 V; fm = 1 GHz 8-9 - GHz
Maximum Unilateral Power Gain (GUM) IC = 15 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C 15-16 - dB
Noise Figure (NF) ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 1 GHz 1.5-2.5 - dB
Total Power Dissipation (Ptot) Ts = 60 °C - 360 mW mW
Thermal Resistance from Junction to Soldering Point (Rth j-s) Ptot = 360 mW - 320 K/W K/W
Collector-Base Voltage (VCBO) Open emitter - 20 V V
Collector-Emitter Voltage (VCEO) Open base - 10 V V
Emitter-Base Voltage (VEBO) Open collector - 1.5 V V
Collector Current (IC) - - 50 mA mA
Junction Temperature (Tj) - - 150 °C °C

Key Features

  • Small Size: Packaged in a surface mount 3-pin SOT23 package, making it suitable for compact designs.
  • Low Noise: Offers a low noise figure, typically between 1.5 and 2.5 dB at 1 GHz.
  • Low Distortion: Designed to minimize distortion, ensuring high signal integrity.
  • High Gain: Provides high gain, with a maximum unilateral power gain of up to 16 dB at 1 GHz.
  • Gold Metallization: Ensures excellent reliability due to gold metallization.

Applications

The PBR941 transistor is primarily intended for wideband applications in the GHz range, particularly in:

  • Analog and digital cellular telephones
  • Cordless phones
  • Radar detectors
  • Pagers
  • Satellite TV-tuners
  • Communication and instrumentation systems

Q & A

  1. What is the package type of the PBR941 transistor?

    The PBR941 transistor is packaged in a surface mount 3-pin SOT23 package.

  2. What are the typical applications of the PBR941 transistor?

    The PBR941 is used in analog and digital cellular telephones, cordless phones, radar detectors, pagers, and satellite TV-tuners.

  3. What is the maximum collector current of the PBR941 transistor?

    The maximum collector current (IC) is 50 mA.

  4. What is the typical noise figure of the PBR941 transistor at 1 GHz?

    The typical noise figure is between 1.5 and 2.5 dB at 1 GHz.

  5. What is the maximum unilateral power gain of the PBR941 transistor?

    The maximum unilateral power gain (GUM) is up to 16 dB at 1 GHz.

  6. What is the thermal resistance from junction to soldering point for the PBR941 transistor?

    The thermal resistance from junction to soldering point (Rth j-s) is 320 K/W.

  7. What is the maximum junction temperature for the PBR941 transistor?

    The maximum junction temperature (Tj) is 150 °C.

  8. What is the collector-base breakdown voltage of the PBR941 transistor?

    The collector-base breakdown voltage (VCBO) is 20 V.

  9. What is the collector-emitter breakdown voltage of the PBR941 transistor?

    The collector-emitter breakdown voltage (VCEO) is 10 V.

  10. What is the total power dissipation of the PBR941 transistor?

    The total power dissipation (Ptot) is 360 mW at Ts = 60 °C.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):10V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Gain:16dB
Power - Max:360mW
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 6V
Current - Collector (Ic) (Max):50mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

$0.24
2,979

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BFU550XAR
BFU550XAR
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BFU530AR
BFU530AR
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
BFU520W135
BFU520W135
NXP USA Inc.
NPN RF TRANSISTOR
BFS17NQTA
BFS17NQTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23
BFU520XVL
BFU520XVL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFG520/X,235
BFG520/X,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
PRF957,115
PRF957,115
NXP USA Inc.
RF TRANS NPN 10V 8.5GHZ SOT323-3
BFR540,235
BFR540,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ TO236AB
BFT92,215
BFT92,215
NXP USA Inc.
RF TRANS PNP 15V 5GHZ TO236AB
BFR93A,235
BFR93A,235
NXP USA Inc.
RF TRANS NPN 12V 6GHZ TO236AB
BFS 17P E8211
BFS 17P E8211
Infineon Technologies
RF TRANS NPN SOT23-3

Related Product By Brand

BZV55-B11,135
BZV55-B11,135
NXP Semiconductors
NEXPERIA BZV55-B11 - ZENER DIODE
PMDXB550UNE,147
PMDXB550UNE,147
NXP Semiconductors
NEXPERIA PMDXB550UNE - SMALL SIG
2N7002BKM/V,315
2N7002BKM/V,315
NXP Semiconductors
NEXPERIA 2N7002BKM - SMALL SIGNA
74LVT244ADB,112
74LVT244ADB,112
NXP Semiconductors
NEXPERIA 74LVT244ADB - BUS DRIVE
74ALVCH16245DGG:11
74ALVCH16245DGG:11
NXP Semiconductors
NEXPERIA 74ALVCH16245 - 16-BIT T
74LVC273DB,112
74LVC273DB,112
NXP Semiconductors
NEXPERIA 74LVC273DB - D FLIP-FLO
74AHC132PW,118
74AHC132PW,118
NXP Semiconductors
NEXPERIA 74AHC132PW - NAND GATE,
74HC32DB,112
74HC32DB,112
NXP Semiconductors
NEXPERIA 74HC32DB - OR GATE, HC/
74LVC3G04DC,125
74LVC3G04DC,125
NXP Semiconductors
NEXPERIA 74LVC3G04DC - INVERTER,
74HC21DB,112
74HC21DB,112
NXP Semiconductors
NEXPERIA 74HC21DB - AND GATE, HC
NX7002BKW115
NX7002BKW115
NXP Semiconductors
NOW NEXPERIA NX7002BKW SMALL SIG
PESD5V0X1BCL315
PESD5V0X1BCL315
NXP Semiconductors
NOW NEXPERIA PESD5V0X1BCL TRANS