Overview
The 2N7002BKM,315 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors. This component is part of the 2N7002 series and is known for its high performance and reliability in various electronic applications. It is packaged in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology.
Key Specifications
| Specification | Description |
|---|---|
| Manufacturer | NXP Semiconductors |
| Manufacturer's Part Number | 2N7002BKM,315 |
| Polarity or Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Surface Mount | YES |
| Maximum Power Dissipation (Abs) | 2.7 W |
| Maximum Drain Current (ID) | 0.45 A |
| Drain Source Voltage (Vds) | 60 V |
| On Resistance (Rds(on)) | 1.6 ohm |
| Threshold Voltage (Vgs) | 1.6 V |
| Operating Temperature Range | -55°C to +150°C |
| Package Style (Meter) | CHIP CARRIER (SOT883) |
| No. of Terminals | 3 |
| Moisture Sensitivity Level (MSL) | 1 |
Key Features
- Logic-level compatible: The 2N7002BKM,315 is designed to be compatible with logic-level signals, making it versatile for various digital and analog circuits.
- Very fast switching: This FET features very fast switching times, which is crucial for high-frequency applications.
- Trench MOSFET technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
- ESD protection up to 2 kV: Provides robust ESD protection, enhancing the component's reliability and lifespan.
- Leadless ultra small DFN1006-3 (SOT883) package: Compact packaging suitable for space-constrained designs.
Applications
The 2N7002BKM,315 is ideal for a variety of applications, including:
- Switching applications: Due to its fast switching times and low on-resistance, it is well-suited for switching circuits.
- Power management: Can be used in power management circuits where high efficiency and low power loss are critical.
- Automotive and industrial electronics: Its robust design and wide operating temperature range make it suitable for use in automotive and industrial environments.
- Consumer electronics: Used in various consumer electronic devices where compact size and high performance are required.
Q & A
- What is the maximum drain current of the 2N7002BKM,315?
The maximum drain current is 0.45 A.
- What is the drain-source voltage rating of this FET?
The drain-source voltage rating is 60 V.
- What is the on-resistance of the 2N7002BKM,315?
The on-resistance is 1.6 ohms.
- What is the operating temperature range of this component?
The operating temperature range is -55°C to +150°C.
- What type of package does the 2N7002BKM,315 use?
It uses a leadless ultra small DFN1006-3 (SOT883) package.
- Is the 2N7002BKM,315 RoHS compliant?
The RoHS compliance status is not explicitly stated, but similar models from NXP are often RoHS compliant.
- What is the moisture sensitivity level (MSL) of this component?
The moisture sensitivity level is 1.
- What technology is used in the 2N7002BKM,315?
It utilizes Trench MOSFET technology.
- Does the 2N7002BKM,315 have built-in ESD protection?
Yes, it has ESD protection up to 2 kV.
- Where can I find additional datasheets and specifications for the 2N7002BKM,315?
You can find additional datasheets, footprints, and schematics on the product details page of authorized distributors or on the NXP Semiconductors website.
