BFS 17P E8211
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Infineon Technologies BFS 17P E8211

Manufacturer No:
BFS 17P E8211
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BFS 17P E8211 from Infineon Technologies is a high-performance RF transistor designed for various radio frequency applications. This NPN silicon RF transistor is packaged in a SOT23-3 surface mount package, making it suitable for compact and high-density circuit designs. The device is characterized by its low noise figure, high transition frequency, and robust power handling capabilities, making it an ideal choice for broadband amplifiers, mixers, and oscillators in sub-GHz applications.

Key Specifications

Parameter Value
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 1.4GHz
Noise Figure (dB Typ @ f) 3.5dB @ 800MHz
Power - Max 280mW
Current - Collector (Ic) (Max) 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package/Case SOT23-3

Key Features

  • Low Noise Figure: The BFS 17P E8211 has a noise figure of 3.5 dB at 800 MHz, making it suitable for low-noise amplifier applications.
  • High Transition Frequency: With a transition frequency of 1.4 GHz, this transistor is ideal for high-frequency applications.
  • High Power Handling: The device can handle a maximum power of 280 mW, ensuring robust performance in various RF circuits.
  • Compact Package: The SOT23-3 surface mount package allows for compact and high-density circuit designs.
  • Pb-free and RoHS Compliant: The transistor is lead-free and compliant with RoHS regulations, making it environmentally friendly.

Applications

  • Broadband Amplifiers: Suitable for broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.
  • Mixers and Oscillators: Ideal for mixers and oscillators in sub-GHz applications due to its high transition frequency and low noise figure.
  • RF Circuits: Can be used in various RF circuits requiring high performance and low noise.

Q & A

  1. What is the transistor type of the BFS 17P E8211?

    The BFS 17P E8211 is an NPN silicon RF transistor.

  2. What is the maximum collector-emitter voltage of the BFS 17P E8211?

    The maximum collector-emitter voltage is 15V.

  3. What is the transition frequency of the BFS 17P E8211?

    The transition frequency is 1.4 GHz.

  4. What is the noise figure of the BFS 17P E8211 at 800 MHz?

    The noise figure is 3.5 dB at 800 MHz.

  5. What is the maximum power handling capability of the BFS 17P E8211?

    The maximum power handling capability is 280 mW.

  6. What is the maximum collector current of the BFS 17P E8211?

    The maximum collector current is 25 mA.

  7. What is the operating temperature range of the BFS 17P E8211?

    The operating temperature range is up to 150°C (TJ).

  8. What package type is the BFS 17P E8211 available in?

    The BFS 17P E8211 is available in a SOT23-3 surface mount package.

  9. Is the BFS 17P E8211 RoHS compliant?

    Yes, the BFS 17P E8211 is Pb-free and RoHS compliant.

  10. What are some typical applications of the BFS 17P E8211?

    Typical applications include broadband amplifiers, mixers, and oscillators in sub-GHz applications.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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