Overview
The BLF6G38S-25,112 is a 25 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications, particularly in the frequency range of 3400 MHz to 3800 MHz. This transistor is optimized for WiMAX and other broadband wireless infrastructure. Although the product has been discontinued, it remains relevant for existing systems and maintenance purposes.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 3400 | - | 3800 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | - | - | 25 | - | W |
| G p | power gain | P L(AV) = 4.5 W; V DS = 28 V | 12.5 | 15 | - | dB |
| RL in | input return loss | P L(AV) = 4.5 W; V DS = 28 V; I Dq = 225 mA | -10 | - | - | dB |
| η D | drain efficiency | V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 225 mA | 22 | 24 | - | % |
| P L(AV) | average output power | - | - | 4.5 | - | W |
| ACPR 1980k | adjacent channel power ratio (1980 kHz) | P L(AV) = 4.5 W; V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 225 mA | -61 | -56 | - | dBc |
| ACPR 885k | adjacent channel power ratio (885 kHz) | P L(AV) = 4.5 W; V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 225 mA | -45 | -40 | - | dBc |
Key Features
- Easy Power Control: Simplifies the process of managing power levels in the transistor.
- Integrated ESD Protection: Provides built-in protection against electrostatic discharge.
- Excellent Ruggedness: Ensures the transistor can withstand various operational stresses.
- High Efficiency: Offers high drain efficiency, which is crucial for minimizing heat and maximizing performance.
- Excellent Thermal Stability: Maintains stable performance across a range of temperatures.
- Broadband Operation: Designed to operate efficiently in the 3400 MHz to 3800 MHz frequency range.
- Internally Matched: Simplifies the design process by having internal matching components.
- Compliance with RoHS Directive: Compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
Applications
- RF Power Amplifiers for Base Stations: Ideal for use in base station applications where high power and efficiency are required.
- Multicarrier Applications: Suitable for multicarrier operations within the 3400 MHz to 3800 MHz frequency range.
Q & A
- What is the frequency range of the BLF6G38S-25,112 transistor?
The frequency range is from 3400 MHz to 3800 MHz.
- What is the nominal output power at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 25 W.
- What is the power gain of the transistor?
The power gain is typically 15 dB, with a minimum of 12.5 dB.
- Does the transistor have integrated ESD protection?
Yes, it has integrated ESD protection.
- What is the drain efficiency of the transistor?
The drain efficiency is typically 24%, with a minimum of 22%.
- What is the average output power of the transistor?
The average output power is 4.5 W.
- Is the transistor compliant with RoHS Directive?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
- What are the typical applications of the BLF6G38S-25,112 transistor?
Typical applications include RF power amplifiers for base stations and multicarrier applications within the specified frequency range.
- Why has the BLF6G38S-25,112 been discontinued?
The product has been discontinued, but details can be found in the discontinuation information provided by Ampleon.
- Where can I find more detailed documentation for the BLF6G38S-25,112?
More detailed documentation, including datasheets and application notes, can be found on the Ampleon website or through authorized distributors.
