BLF871,112
  • Share:

Ampleon USA Inc. BLF871,112

Manufacturer No:
BLF871,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 89V 19DB SOT467C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF871,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is specifically designed for UHF broadcast and industrial applications, offering a robust solution for high-power RF requirements. The transistor is built using LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which ensures excellent reliability and efficiency.

Key Specifications

ParameterValue
Frequency Range0.005 to 0.86 GHz
Output Power100 W
Gain21 dB
Voltage40 V
TechnologyLDMOS
Package TypeSOT-467C

Key Features

  • Easy power control due to its linear operation characteristics.
  • Excellent thermal stability and reliability.
  • High gain and efficiency, making it suitable for high-power RF applications.
  • Robust design to handle demanding broadcast and industrial environments.

Applications

  • UHF broadcast transmitters.
  • Industrial RF applications such as plasma generation, medical equipment, and RF heating.
  • Other high-power RF systems requiring reliable and efficient performance.

Q & A

  1. What is the frequency range of the BLF871,112?
    The BLF871,112 operates within the frequency range of 0.005 to 0.86 GHz.
  2. What is the output power of the BLF871,112?
    The output power of the BLF871,112 is 100 W.
  3. What technology is used in the BLF871,112?
    The BLF871,112 uses LDMOS technology.
  4. What is the typical gain of the BLF871,112?
    The typical gain of the BLF871,112 is 21 dB.
  5. What is the maximum voltage for the BLF871,112?
    The maximum voltage for the BLF871,112 is 40 V.
  6. In what package type is the BLF871,112 available?
    The BLF871,112 is available in the SOT-467C package type.
  7. What are the primary applications of the BLF871,112?
    The primary applications include UHF broadcast transmitters and industrial RF applications.
  8. Why is the BLF871,112 suitable for high-power RF applications?
    The BLF871,112 is suitable due to its high gain, efficiency, and robust design.
  9. What are the benefits of using LDMOS technology in the BLF871,112?
    LDMOS technology provides excellent thermal stability and reliability.
  10. Where can I find more detailed specifications for the BLF871,112?
    You can find detailed specifications on the official Ampleon website or through distributors like Digi-Key and RFMW.

Product Attributes

Transistor Type:LDMOS
Frequency:860MHz
Gain:19dB
Voltage - Test:40 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:500 mA
Power - Output:100W
Voltage - Rated:89 V
Package / Case:SOT-467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

-
179

Please send RFQ , we will respond immediately.

Same Series
BLF871S,112
BLF871S,112
RF FET LDMOS 89V 19DB SOT467B

Similar Products

Part Number BLF871,112 BLF871S,112 BLF881,112 BLF872,112 BLF878,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Active Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS LDMOS LDMOS (Dual), Common Source
Frequency 860MHz 860MHz 860MHz - 860MHz
Gain 19dB 19dB 21dB - 21dB
Voltage - Test 40 V 40 V 50 V 32 V 40 V
Current Rating (Amps) - - - 41A -
Noise Figure - - - - -
Current - Test 500 mA 500 mA 500 mA 900 mA 1.4 A
Power - Output 100W 100W 140W 300W 300W
Voltage - Rated 89 V 89 V 104 V 65 V 89 V
Package / Case SOT-467C SOT-467B SOT-467C SOT-800-1 SOT-979A
Supplier Device Package SOT467C SOT-467B SOT467C LDMOST CDFM2

Related Product By Categories

CGH40010F
CGH40010F
Wolfspeed, Inc.
RF MOSFET HEMT 28V 440166
MW6S004NT1
MW6S004NT1
NXP USA Inc.
FET RF 68V 1.96GHZ PLD-1.5
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
BLF7G24LS-100,112
BLF7G24LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
MMBFJ310LT1G
MMBFJ310LT1G
onsemi
RF MOSFET N-CH JFET 10V SOT23
SD2942W
SD2942W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M244
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G27S-45,135
BLF6G27S-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
SD2933
SD2933
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M177
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD

Related Product By Brand

BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF888ESU
BLF888ESU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539B
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
BLF7G22LS-200,112
BLF7G22LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B