Overview
The BLF7G20LS-90P,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed for base station applications. Originally developed by NXP USA Inc., this component has been transferred to Ampleon and is now managed by Flip Electronics. It operates within the frequency range of 1800 MHz to 2000 MHz, making it suitable for various wireless infrastructure applications.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | 1427 | 2170 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | 90 | W | |||
| G p | power gain | P L(AV) = 40 W; V DS = 28 V | 18.3 | 19.5 | dB | |
| RL in | input return loss | P L(AV) = 40 W; V DS = 28 V; I Dq = 550 mA | -15 | -8 | dB | |
| η D | drain efficiency | P L(AV) = 40 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 550 mA | 38 | 41 | % | |
| P L(AV) | average output power | 40 | W | |||
| ACPR 600k | adjacent channel power ratio (600 kHz) | P L(AV) = 40 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 550 mA | -74 | -70.5 | dBc | |
| ACPR 400k | adjacent channel power ratio (400 kHz) | P L(AV) = 40 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 550 mA | -61 | -58 | dBc |
Key Features
- Excellent Ruggedness: Ensures the transistor can withstand harsh operating conditions.
- High Efficiency: Offers high drain efficiency, typically up to 41%, which is crucial for minimizing power consumption and heat generation.
- Low Rth: Provides excellent thermal stability due to its low thermal resistance.
- Broadband Operation: Designed for operation across a wide frequency range from 1427 MHz to 2170 MHz.
- Lower Output Capacitance: Improves performance in Doherty amplifier applications.
- Low Memory Effects: Enhances pre-distortability, making it suitable for linear amplification.
- Internally Matched: Simplifies the design process by being internally matched for ease of use.
- Integrated ESD Protection: Protects the device from electrostatic discharge.
- RoHS Compliance: Compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Applications
- RF Power Amplifiers for Base Stations: Ideal for use in base station applications, particularly in multi-carrier scenarios.
- Wireless Infrastructure: Suitable for various wireless infrastructure applications requiring high-power RF amplification.
Q & A
- What is the typical output power of the BLF7G20LS-90P at 3 dB gain compression?
The typical output power at 3 dB gain compression is 90 W.
- What is the frequency range of the BLF7G20LS-90P?
The frequency range is from 1427 MHz to 2170 MHz.
- What is the typical power gain of the BLF7G20LS-90P?
The typical power gain is 19.5 dB.
- What is the drain efficiency of the BLF7G20LS-90P?
The drain efficiency is typically up to 41%.
- Is the BLF7G20LS-90P internally matched?
- Does the BLF7G20LS-90P have integrated ESD protection?
- What are the typical applications of the BLF7G20LS-90P?
- Is the BLF7G20LS-90P RoHS compliant?
- What is the package type of the BLF7G20LS-90P?
- Who is the current manufacturer of the BLF7G20LS-90P?
