SD3931-10
  • Share:

STMicroelectronics SD3931-10

Manufacturer No:
SD3931-10
Manufacturer:
STMicroelectronics
Package:
Tray
Description:
IC RF PWR TRANS HF/VHF/UHF M174
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SD3931-10 is an N-channel MOS field-effect RF power transistor produced by STMicroelectronics. It is designed for use in 100 V DC large signal applications up to 150 MHz. This transistor is particularly suited for high-frequency applications in the HF/VHF/UHF range, making it a valuable component in various radio frequency systems.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 250 V
Gate-Source Voltage (VGS) ±20 V
Drain Current (ID) 10 A
Power Dissipation (PDISS) 389 W
Maximum Operating Junction Temperature (TJ) 200 °C
Storage Temperature (TSTG) -65 to +150 °C
Junction-Case Thermal Resistance (RthJC) 0.45 °C/W
Output Power (POUT) at 150 MHz 175 W min. W
Gain at 150 MHz 23 dB dB

Key Features

  • Excellent thermal stability
  • Common source configuration
  • High output power: POUT = 175 W min. with 23 dB gain at 150 MHz
  • In compliance with the 2002/95/EC European directive

Applications

The SD3931-10 is suitable for various high-frequency applications, including:

  • HF/VHF/UHF radio frequency systems
  • Amplifiers and transmitters in communication equipment
  • Radar systems
  • Broadcasting and telecommunications equipment

Q & A

  1. What is the maximum drain-source voltage of the SD3931-10?

    The maximum drain-source voltage (VDSS) is 250 V.

  2. What is the maximum gate-source voltage of the SD3931-10?

    The maximum gate-source voltage (VGS) is ±20 V.

  3. What is the maximum drain current of the SD3931-10?

    The maximum drain current (ID) is 10 A.

  4. What is the maximum power dissipation of the SD3931-10?

    The maximum power dissipation (PDISS) is 389 W.

  5. What is the typical output power of the SD3931-10 at 150 MHz?

    The typical output power (POUT) at 150 MHz is 175 W min. with 23 dB gain.

  6. What is the junction-case thermal resistance of the SD3931-10?

    The junction-case thermal resistance (RthJC) is 0.45 °C/W).

  7. What is the storage temperature range for the SD3931-10?

    The storage temperature range (TSTG) is -65 to +150 °C).

  8. Is the SD3931-10 compliant with any specific European directives?

    Yes, it is in compliance with the 2002/95/EC European directive).

  9. What is the package style and mounting method of the SD3931-10?

    The package style is M-174, and the mounting method is surface mount).

  10. What are some typical applications of the SD3931-10?

    Typical applications include HF/VHF/UHF radio frequency systems, amplifiers and transmitters in communication equipment, radar systems, and broadcasting and telecommunications equipment).

Product Attributes

Transistor Type:N-Channel
Frequency:150MHz
Gain:21.3dB
Voltage - Test:100 V
Current Rating (Amps):10A
Noise Figure:- 
Current - Test:250 mA
Power - Output:175W
Voltage - Rated:250 V
Package / Case:M174
Supplier Device Package:M174
0 Remaining View Similar

In Stock

$82.49
5

Please send RFQ , we will respond immediately.

Similar Products

Part Number SD3931-10 SD2931-10
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
Transistor Type N-Channel N-Channel
Frequency 150MHz 175MHz
Gain 21.3dB 15dB
Voltage - Test 100 V 50 V
Current Rating (Amps) 10A 20A
Noise Figure - -
Current - Test 250 mA 250 mA
Power - Output 175W 150W
Voltage - Rated 250 V 125 V
Package / Case M174 M174
Supplier Device Package M174 M174

Related Product By Categories

BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
PD55015-E
PD55015-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
PD55025-E
PD55025-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
AFT27S012NT1
AFT27S012NT1
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BF998R,215
BF998R,215
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143R
MMBF4416LT1G
MMBF4416LT1G
onsemi
JFET N-CH 30V 15MA SOT23
MW7IC2425NBR1
MW7IC2425NBR1
NXP USA Inc.
FET RF 65V 2.45GHZ TO-272-16
NE5550234-T1-AZ
NE5550234-T1-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
BF909R,235
BF909R,235
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143

Related Product By Brand

STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10