A3I20X050GNR1
  • Share:

NXP USA Inc. A3I20X050GNR1

Manufacturer No:
A3I20X050GNR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
AIRFAST RF LDMOS WIDEBAND INTEGR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A3I20X050GNR1 is a high-performance RF power amplifier integrated circuit designed by NXP USA Inc. This device is part of NXP's LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology portfolio, specifically tailored for wireless infrastructure applications. The A3I20X050GNR1 operates within the frequency range of 1800 to 2200 MHz, making it suitable for various cellular and wireless communication systems.

Key Specifications

Parameter Value
Frequency Range 1800 MHz to 2200 MHz
Average Output Power 6.3 W
Supply Voltage 28 V
Technology LDMOS
Package Type OM-400G-8

Key Features

  • Integrated Doherty circuit for high efficiency and linearity.
  • On-chip matching for simplified design and reduced external component count.
  • High average output power of 6.3 W.
  • Operates from a single 28 V supply voltage.
  • LDMOS technology for robust performance and reliability.

Applications

  • Wireless infrastructure, including base stations and repeaters.
  • Cellular networks (e.g., GSM, CDMA, LTE).
  • Broadband wireless access systems.
  • Public safety and emergency communication systems.

Q & A

  1. What is the frequency range of the A3I20X050GNR1?

    The A3I20X050GNR1 operates within the frequency range of 1800 MHz to 2200 MHz.

  2. What is the average output power of the A3I20X050GNR1?

    The average output power is 6.3 W.

  3. What is the supply voltage for the A3I20X050GNR1?

    The supply voltage is 28 V.

  4. What technology is used in the A3I20X050GNR1?

    The device uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.

  5. What is the package type of the A3I20X050GNR1?

    The package type is OM-400G-8.

  6. What are the key applications of the A3I20X050GNR1?

    The key applications include wireless infrastructure, cellular networks, broadband wireless access systems, and public safety communication systems.

  7. Does the A3I20X050GNR1 have integrated matching?

    Yes, it has on-chip matching for simplified design and reduced external component count.

  8. What is the benefit of the Doherty circuit in the A3I20X050GNR1?

    The Doherty circuit enhances efficiency and linearity.

  9. Where can I find detailed specifications for the A3I20X050GNR1?

    Detailed specifications can be found in the datasheet available on NXP's official website and other authorized distributors like Mouser and Digi-Key.

  10. Is the A3I20X050GNR1 suitable for high-power applications?

    Yes, it is designed for high-power applications with an average output power of 6.3 W.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:1.8GHz ~ 2.2GHz
Gain:29.3dB
Voltage - Test:28 V
Current Rating (Amps):10µA
Noise Figure:- 
Current - Test:145 mA
Power - Output:6.3W
Voltage - Rated:65 V
Package / Case:OM-400G-8
Supplier Device Package:OM-400G-8
0 Remaining View Similar

In Stock

$58.15
17

Please send RFQ , we will respond immediately.

Same Series
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF888BS,112
BLF888BS,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539B
BLF7G24LS-140,118
BLF7G24LS-140,118
NXP USA Inc.
N-CHANNEL, MOSFET
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
BLF8G10LS-160,118
BLF8G10LS-160,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.7DB SOT502B
BF909AR215
BF909AR215
NXP USA Inc.
MOSFET N-CH SOT-143R
SD3931-10
SD3931-10
STMicroelectronics
IC RF PWR TRANS HF/VHF/UHF M174
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BF1212,215
BF1212,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143B
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
MRF6V2010NR1
MRF6V2010NR1
NXP USA Inc.
FET RF 110V 220MHZ TO270-2

Related Product By Brand

BAS216,115
BAS216,115
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
MIMXRT1051CVJ5B
MIMXRT1051CVJ5B
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
LPC1114FHN33/301:5
LPC1114FHN33/301:5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
MCF52110CAE66
MCF52110CAE66
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MK20FN1M0VLQ12R
MK20FN1M0VLQ12R
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 144LQFP
MCIMX7U3DVK07SC
MCIMX7U3DVK07SC
NXP USA Inc.
IC I.MX 7ULP VFBGA 361
HEF4053BT/AUJ
HEF4053BT/AUJ
NXP USA Inc.
IC ANLG SWITCH TRPL SPDT 16SOIC
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN