A3I20X050GNR1
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NXP USA Inc. A3I20X050GNR1

Manufacturer No:
A3I20X050GNR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
AIRFAST RF LDMOS WIDEBAND INTEGR
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The A3I20X050GNR1 is a high-performance RF power amplifier integrated circuit designed by NXP USA Inc. This device is part of NXP's LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology portfolio, specifically tailored for wireless infrastructure applications. The A3I20X050GNR1 operates within the frequency range of 1800 to 2200 MHz, making it suitable for various cellular and wireless communication systems.

Key Specifications

Parameter Value
Frequency Range 1800 MHz to 2200 MHz
Average Output Power 6.3 W
Supply Voltage 28 V
Technology LDMOS
Package Type OM-400G-8

Key Features

  • Integrated Doherty circuit for high efficiency and linearity.
  • On-chip matching for simplified design and reduced external component count.
  • High average output power of 6.3 W.
  • Operates from a single 28 V supply voltage.
  • LDMOS technology for robust performance and reliability.

Applications

  • Wireless infrastructure, including base stations and repeaters.
  • Cellular networks (e.g., GSM, CDMA, LTE).
  • Broadband wireless access systems.
  • Public safety and emergency communication systems.

Q & A

  1. What is the frequency range of the A3I20X050GNR1?

    The A3I20X050GNR1 operates within the frequency range of 1800 MHz to 2200 MHz.

  2. What is the average output power of the A3I20X050GNR1?

    The average output power is 6.3 W.

  3. What is the supply voltage for the A3I20X050GNR1?

    The supply voltage is 28 V.

  4. What technology is used in the A3I20X050GNR1?

    The device uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.

  5. What is the package type of the A3I20X050GNR1?

    The package type is OM-400G-8.

  6. What are the key applications of the A3I20X050GNR1?

    The key applications include wireless infrastructure, cellular networks, broadband wireless access systems, and public safety communication systems.

  7. Does the A3I20X050GNR1 have integrated matching?

    Yes, it has on-chip matching for simplified design and reduced external component count.

  8. What is the benefit of the Doherty circuit in the A3I20X050GNR1?

    The Doherty circuit enhances efficiency and linearity.

  9. Where can I find detailed specifications for the A3I20X050GNR1?

    Detailed specifications can be found in the datasheet available on NXP's official website and other authorized distributors like Mouser and Digi-Key.

  10. Is the A3I20X050GNR1 suitable for high-power applications?

    Yes, it is designed for high-power applications with an average output power of 6.3 W.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:1.8GHz ~ 2.2GHz
Gain:29.3dB
Voltage - Test:28 V
Current Rating (Amps):10µA
Noise Figure:- 
Current - Test:145 mA
Power - Output:6.3W
Voltage - Rated:65 V
Package / Case:OM-400G-8
Supplier Device Package:OM-400G-8
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$58.15
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