A3I20X050GNR1
  • Share:

NXP USA Inc. A3I20X050GNR1

Manufacturer No:
A3I20X050GNR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
AIRFAST RF LDMOS WIDEBAND INTEGR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A3I20X050GNR1 is a high-performance RF power amplifier integrated circuit designed by NXP USA Inc. This device is part of NXP's LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology portfolio, specifically tailored for wireless infrastructure applications. The A3I20X050GNR1 operates within the frequency range of 1800 to 2200 MHz, making it suitable for various cellular and wireless communication systems.

Key Specifications

Parameter Value
Frequency Range 1800 MHz to 2200 MHz
Average Output Power 6.3 W
Supply Voltage 28 V
Technology LDMOS
Package Type OM-400G-8

Key Features

  • Integrated Doherty circuit for high efficiency and linearity.
  • On-chip matching for simplified design and reduced external component count.
  • High average output power of 6.3 W.
  • Operates from a single 28 V supply voltage.
  • LDMOS technology for robust performance and reliability.

Applications

  • Wireless infrastructure, including base stations and repeaters.
  • Cellular networks (e.g., GSM, CDMA, LTE).
  • Broadband wireless access systems.
  • Public safety and emergency communication systems.

Q & A

  1. What is the frequency range of the A3I20X050GNR1?

    The A3I20X050GNR1 operates within the frequency range of 1800 MHz to 2200 MHz.

  2. What is the average output power of the A3I20X050GNR1?

    The average output power is 6.3 W.

  3. What is the supply voltage for the A3I20X050GNR1?

    The supply voltage is 28 V.

  4. What technology is used in the A3I20X050GNR1?

    The device uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.

  5. What is the package type of the A3I20X050GNR1?

    The package type is OM-400G-8.

  6. What are the key applications of the A3I20X050GNR1?

    The key applications include wireless infrastructure, cellular networks, broadband wireless access systems, and public safety communication systems.

  7. Does the A3I20X050GNR1 have integrated matching?

    Yes, it has on-chip matching for simplified design and reduced external component count.

  8. What is the benefit of the Doherty circuit in the A3I20X050GNR1?

    The Doherty circuit enhances efficiency and linearity.

  9. Where can I find detailed specifications for the A3I20X050GNR1?

    Detailed specifications can be found in the datasheet available on NXP's official website and other authorized distributors like Mouser and Digi-Key.

  10. Is the A3I20X050GNR1 suitable for high-power applications?

    Yes, it is designed for high-power applications with an average output power of 6.3 W.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:1.8GHz ~ 2.2GHz
Gain:29.3dB
Voltage - Test:28 V
Current Rating (Amps):10µA
Noise Figure:- 
Current - Test:145 mA
Power - Output:6.3W
Voltage - Rated:65 V
Package / Case:OM-400G-8
Supplier Device Package:OM-400G-8
0 Remaining View Similar

In Stock

$58.15
17

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

MRFE6VS25LR5
MRFE6VS25LR5
NXP USA Inc.
FET RF 133V 512MHZ NI360L
BLF8G10LS-300PJ
BLF8G10LS-300PJ
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
PD54008L-E
PD54008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
PD55015S-E
PD55015S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
PD84010-E
PD84010-E
STMicroelectronics
FET RF 40V 870MHZ
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
MW7IC2425NBR1
MW7IC2425NBR1
NXP USA Inc.
FET RF 65V 2.45GHZ TO-272-16
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B
BLP7G22-10,135
BLP7G22-10,135
NXP USA Inc.
TRANSISTOR DRIVER LDMOS 12HVSON

Related Product By Brand

BB178,335
BB178,335
NXP USA Inc.
DIODE VHF VAR CAP 32V SOD523
BFS17W,135
BFS17W,135
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
BC807-25/L215
BC807-25/L215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
SPC5777CDK3MMO3
SPC5777CDK3MMO3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 516MAPBGA
LS1028AXN7PQA
LS1028AXN7PQA
NXP USA Inc.
LS1028A-1500 XT NO SEC
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
PCA9534BS3,118
PCA9534BS3,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16HVQFN
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE