Overview
The SMMBFJ310LT1G is a N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi, designed for VHF/UHF amplifier applications. This device is part of the MMBFJ310L and SMMBFJ310L series, which are known for their high performance and reliability. The SMMBFJ310LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 25 | Vdc |
| Gate-Source Voltage | VGS | 25 | Vdc |
| Gate Current | IG | 10 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Gate-Source Breakdown Voltage (IG = -1.0 μAdc, VDS = 0) | V(BR)GSS | -25 | Vdc |
| Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) | VGS(off) | -4.0 to -6.5 | Vdc |
| Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) | IDSS | 30 to 60 | mAdc |
| Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) | |Yfs| | 8.0 to 18 | mmhos |
| Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) | Ciss | 5.0 | pF |
| Reverse Transfer Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) | Crss | 2.5 | pF |
Key Features
- Drain and Source are Interchangeable
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
- AEC-Q101 Qualified and PPAP Capable
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
- High Performance in VHF/UHF Amplifier Applications
- Low Noise and High Gain Characteristics
Applications
- VHF/UHF Amplifiers
- Automotive Electronics
- High-Frequency Amplifiers
- RF and Microwave Circuits
- General Purpose Amplification in Various Electronic Systems
Q & A
- What is the maximum drain-source voltage for the SMMBFJ310LT1G?
The maximum drain-source voltage is 25 Vdc.
- What is the gate-source breakdown voltage for this device?
The gate-source breakdown voltage is -25 Vdc.
- Is the SMMBFJ310LT1G RoHS compliant?
- What are the typical applications for the SMMBFJ310LT1G?
The device is typically used in VHF/UHF amplifiers, automotive electronics, and other high-frequency applications.
- What is the thermal resistance, junction-to-ambient for this device?
The thermal resistance, junction-to-ambient is 556 °C/W.
- What is the gate source cutoff voltage range for the SMMBFJ310LT1G?
The gate source cutoff voltage range is -4.0 to -6.5 Vdc.
- What is the forward transfer admittance for this device?
The forward transfer admittance is 8.0 to 18 mmhos at VDS = 10 Vdc, ID = 10 mAdc, and f = 1.0 kHz.
- Is the SMMBFJ310LT1G suitable for automotive applications?
- What is the input capacitance of the SMMBFJ310LT1G?
The input capacitance is 5.0 pF at VGS = -10 Vdc, VDS = 0 Vdc, and f = 1.0 MHz.
- What is the package type for the SMMBFJ310LT1G?
The device is packaged in a SOT-23 (TO-236) case.
