MMBFJ310LT1G
  • Share:

onsemi MMBFJ310LT1G

Manufacturer No:
MMBFJ310LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
RF MOSFET N-CH JFET 10V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBFJ310LT1G is an N-channel Junction Field-Effect Transistor (JFET) produced by onsemi. This transistor is designed for use in VHF/UHF amplifier applications and is packaged in a SOT-23-3 case, making it suitable for surface-mount technology (SMT) assembly. The device is lead-free and compliant with RoHS standards, ensuring environmental sustainability and regulatory compliance.

Key Specifications

AttributeValue
Manufactureronsemi
Part NumberMMBFJ310LT1G
PackageSOT-23-3
Transistor PolarityN-Channel
ConfigurationSingle
Vds - Drain-Source Breakdown Voltage25 V
Idss (Drain Current at Vds, Vgs=0)24 to 60 mA
Mounting StyleSMD/SMT
TechnologySilicon

Key Features

  • N-channel JFET suitable for VHF/UHF amplifier applications.
  • High drain current (Idss) range of 24 to 60 mA.
  • Drain-source breakdown voltage of 25 V.
  • Lead-free and RoHS compliant.
  • SOT-23-3 package for surface-mount technology.

Applications

The MMBFJ310LT1G is primarily used in VHF/UHF amplifier circuits, making it suitable for a variety of applications including radio frequency (RF) amplifiers, audio amplifiers, and other high-frequency electronic devices. Its characteristics also make it a good choice for general-purpose switching and amplification tasks in electronic circuits.

Q & A

  1. What is the part number of this JFET?
    The part number of this JFET is MMBFJ310LT1G.
  2. Who is the manufacturer of the MMBFJ310LT1G?
    The manufacturer is onsemi.
  3. What is the package type of the MMBFJ310LT1G?
    The package type is SOT-23-3.
  4. What is the transistor polarity of the MMBFJ310LT1G?
    The transistor polarity is N-channel.
  5. What is the drain-source breakdown voltage (Vds) of the MMBFJ310LT1G?
    The drain-source breakdown voltage is 25 V.
  6. What is the range of drain current (Idss) for the MMBFJ310LT1G?
    The range of drain current (Idss) is 24 to 60 mA.
  7. Is the MMBFJ310LT1G RoHS compliant?
    Yes, the MMBFJ310LT1G is RoHS compliant and lead-free.
  8. What are the primary applications of the MMBFJ310LT1G?
    The primary applications include VHF/UHF amplifier circuits and other high-frequency electronic devices.
  9. What is the mounting style of the MMBFJ310LT1G?
    The mounting style is SMD/SMT (Surface Mount Device/Surface Mount Technology).
  10. Where can I find the datasheet for the MMBFJ310LT1G?
    You can find the datasheet on the official onsemi website or through distributors like LCSC, Mouser, and others.

Product Attributes

Transistor Type:N-Channel JFET
Frequency:- 
Gain:12dB
Voltage - Test:10 V
Current Rating (Amps):60mA
Noise Figure:- 
Current - Test:10 mA
Power - Output:- 
Voltage - Rated:25 V
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.36
1,296

Please send RFQ , we will respond immediately.

Same Series
SMMBFJ310LT1G
SMMBFJ310LT1G
RF MOSFET N-CH JFET 10V SOT23
MMBFJ310LT3G
MMBFJ310LT3G
RF MOSFET N-CH JFET 10V SOT23
SMMBFJ309LT1G
SMMBFJ309LT1G
JFET N-CH 25V 30MA SOT23
MMBFJ309LT1G
MMBFJ309LT1G
RF MOSFET N-CH JFET SOT23-3
SMMBFJ310LT3G
SMMBFJ310LT3G
RF MOSFET N-CH JFET 10V SOT23
MMBFJ310LT1
MMBFJ310LT1
RF MOSFET N-CH JFET 10V SOT23

Similar Products

Part Number MMBFJ310LT1G MMBFJ310LT3G MMBFJ310LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type N-Channel JFET N-Channel JFET -
Frequency - - -
Gain 12dB 12dB -
Voltage - Test 10 V 10 V -
Current Rating (Amps) 60mA 60mA -
Noise Figure - - -
Current - Test 10 mA 10 mA -
Power - Output - - -
Voltage - Rated 25 V 25 V -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

Related Product By Categories

BLF647PS,112
BLF647PS,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
CLF1G0035-100
CLF1G0035-100
Rochester Electronics, LLC
CLF1G0035-100 - 100W BROADBAND R
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
PD55025-E
PD55025-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
PD85035S-E
PD85035S-E
STMicroelectronics
FET RF 40V 870MHZ
BLF574XRS,112
BLF574XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214B
A3I20X050GNR1
A3I20X050GNR1
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BF1202WR,135
BF1202WR,135
NXP USA Inc.
MOSFET N-CH DUAL GATE 4DFP
BLF6G38LS-50,112
BLF6G38LS-50,112
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF7G20LS-90PH
BLF7G20LS-90PH
Ampleon USA Inc.
RF FET LDMOS 90W CDFM4

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE