Overview
The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed by STMicroelectronics. It is part of the LDMOS technology family and is optimized for high gain, broad band commercial and industrial applications. The transistor operates at 12 V in common source mode at frequencies up to 1 GHz, offering excellent gain, linearity, and reliability. The PowerSO-10RF plastic package, in which the PD55003-E is mounted, is the first JEDEC-approved, high power SMD package from ST, ensuring high reliability and ease of assembly.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (V(BR)DSS) | 40 | V |
| Gate-source voltage (VGS) | ± 20 | V |
| Drain current (ID) | 2.5 | A |
| Power dissipation (PDISS) @ TC = 70°C | 31.7 | W |
| Max. operating junction temperature (TJ) | 165 | °C |
| Storage temperature (TSTG) | -65 to +150 | °C |
| Junction-case thermal resistance (RthJC) | 3.0 | °C/W |
| Output Power (POUT) @ 500 MHz / 12.5 V | 3 W | W |
| Gain @ 500 MHz / 12.5 V | 17 dB | dB |
Key Features
- Excellent thermal stability
- Common source configuration
- High gain and broad band performance up to 1 GHz
- Superior linearity performance, ideal for car mobile radios
- Mounted in the PowerSO-10RF plastic package, the first JEDEC-approved high power SMD package from ST
- High reliability and ease of assembly
Applications
The PD55003-E is designed for high gain, broad band commercial and industrial applications. Its superior linearity performance makes it an ideal solution for car mobile radios and other RF power applications requiring high reliability and performance.
Q & A
- What is the PD55003-E?
The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor from STMicroelectronics.
- What are the key applications of the PD55003-E?
The PD55003-E is designed for high gain, broad band commercial and industrial applications, particularly suitable for car mobile radios.
- What is the operating frequency range of the PD55003-E?
The PD55003-E operates at frequencies up to 1 GHz.
- What is the output power of the PD55003-E at 500 MHz and 12.5 V?
The output power is 3 W with a gain of 17 dB at 500 MHz and 12.5 V.
- What package is the PD55003-E mounted in?
The PD55003-E is mounted in the PowerSO-10RF plastic package, which is the first JEDEC-approved high power SMD package from ST.
- What are the maximum ratings for drain-source voltage and gate-source voltage?
The maximum drain-source voltage (V(BR)DSS) is 40 V, and the maximum gate-source voltage (VGS) is ± 20 V.
- What is the maximum operating junction temperature of the PD55003-E?
The maximum operating junction temperature (TJ) is 165°C.
- What is the storage temperature range for the PD55003-E?
The storage temperature range (TSTG) is -65 to +150°C.
- How does the PowerSO-10RF package contribute to the performance of the PD55003-E?
The PowerSO-10RF package is designed for high reliability and optimized for RF requirements, offering excellent RF performance and ease of assembly.
- Where can I find mounting recommendations for the PD55003-E?
Mounting recommendations are provided in application note AN1294, available on www.st.com.
