Overview
The BLF7G20LS-90P,118 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon USA Inc. This device is specifically tailored for base station applications, operating within the frequency range of 1800 MHz to 2000 MHz, with optimized performance at 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz, and 2110 MHz to 2170 MHz. The transistor is known for its excellent ruggedness, high efficiency, and low thermal resistance, making it an ideal choice for RF power amplifiers in wireless infrastructure.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 1427 | - | 2170 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: GSM EDGE | - | 90 | - | W |
| G p | power gain | P L(AV) = 40 W; V DS = 28 V | 18.3 | 19.5 | - | dB |
| RL in | input return loss | P L(AV) = 40 W; V DS = 28 V; I Dq = 550 mA | -15 | -8 | - | dB |
| η D | drain efficiency | P L(AV) = 40 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 550 mA | 38 | 41 | - | % |
| P L(AV) | average output power | - | - | 40 | - | W |
| ACPR 600k | adjacent channel power ratio (600 kHz) | P L(AV) = 40 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 550 mA | -74 | -70.5 | - | dBc |
| ACPR 400k | adjacent channel power ratio (400 kHz) | P L(AV) = 40 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 550 mA | -61 | -58 | - | dBc |
Key Features
- Excellent ruggedness and reliability
- High efficiency, contributing to lower power consumption and heat generation
- Low thermal resistance (Rth) for excellent thermal stability
- Designed for broadband operation across frequencies from 1427 MHz to 2170 MHz
- Lower output capacitance, enhancing performance in Doherty amplifier applications
- Low memory effects, providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection for enhanced reliability
- Compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
The BLF7G20LS-90P,118 is primarily used in RF power amplifiers for base stations and multi-carrier applications. Its high performance and reliability make it suitable for various wireless infrastructure needs.
Q & A
- What is the frequency range of the BLF7G20LS-90P,118?
The BLF7G20LS-90P,118 operates within the frequency range of 1800 MHz to 2000 MHz, with optimized performance at 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz, and 2110 MHz to 2170 MHz. - What is the nominal output power of the BLF7G20LS-90P,118?
The nominal output power at 3 dB gain compression is 90 W. - What are the key features of the BLF7G20LS-90P,118?
The key features include excellent ruggedness, high efficiency, low thermal resistance, broadband operation, lower output capacitance, low memory effects, internal matching, integrated ESD protection, and RoHS compliance. - What are the typical applications of the BLF7G20LS-90P,118?
The transistor is used in RF power amplifiers for base stations and multi-carrier applications. - What is the power gain of the BLF7G20LS-90P,118?
The power gain is typically 19.5 dB under the conditions P L(AV) = 40 W and V DS = 28 V. - What is the drain efficiency of the BLF7G20LS-90P,118?
The drain efficiency is typically 41% under the conditions P L(AV) = 40 W, V DS = 28 V, and 1805 MHz ≤ f ≤ 1880 MHz. - Does the BLF7G20LS-90P,118 have integrated ESD protection?
Yes, the transistor has integrated ESD protection. - Is the BLF7G20LS-90P,118 RoHS compliant?
Yes, it is compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC. - What is the average output power of the BLF7G20LS-90P,118?
The average output power is 40 W. - What are the adjacent channel power ratios (ACPR) for the BLF7G20LS-90P,118?
The ACPR at 600 kHz is typically -70.5 dBc, and at 400 kHz, it is typically -58 dBc.
