Overview
The BLF6G38LS-50,118 is a 50 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications, particularly in the frequency range of 3400 MHz to 3800 MHz. This transistor is part of the WiMAX power LDMOS series and is known for its high efficiency, excellent ruggedness, and thermal stability. Although this product has been discontinued, it remains relevant for understanding the capabilities and applications of LDMOS transistors in RF power amplifiers.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| Frequency Range (f range) | - | 3400 | - | 3800 | MHz |
| Nominal Output Power at 3 dB Gain Compression (P L(3dB)) | - | - | 50 | - | W |
| Power Gain (G p) | P L(AV) = 9 W; V DS = 28 V | 12.5 | 14 | - | dB |
| Input Return Loss (RL in) | P L(AV) = 9 W; V DS = 28 V; I Dq = 450 mA | -10 | - | - | dB |
| Drain Efficiency (η D) | P L(AV) = 9 W; V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 450 mA | 20 | 23 | - | % |
| Average Output Power (P L(AV)) | - | - | 9 | - | W |
| Peak Output Power (P L(M)) | P L(AV) = 9 W | 65 | 70 | - | W |
| Adjacent Channel Power Ratio (1980 kHz) (ACPR 1980k) | P L(AV) = 9 W; V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 450 mA | -64 | -62 | - | dBc |
| Adjacent Channel Power Ratio (885 kHz) (ACPR 885k) | P L(AV) = 9 W; V DS = 28 V; 3400 MHz < f < 3800 MHz; I Dq = 450 mA | -49 | -46 | - | dBc |
Key Features
- Qualified up to a maximum V DS operation of 32 V
- Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
- Integrated ESD protection
- Excellent ruggedness and thermal stability
- High efficiency
- Designed for broadband operation
- Internally matched for ease of use
- Low gold plating thickness on leads
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
The BLF6G38LS-50,118 is primarily used in RF power amplifiers for base stations and multicarrier applications within the 3400 MHz to 3800 MHz frequency range. Its high power output and efficiency make it suitable for various wireless infrastructure applications.
Q & A
- What is the frequency range of the BLF6G38LS-50,118 transistor?
The BLF6G38LS-50,118 operates in the frequency range of 3400 MHz to 3800 MHz. - What is the nominal output power of the BLF6G38LS-50,118 at 3 dB gain compression?
The nominal output power is 50 W. - What is the power gain of the BLF6G38LS-50,118?
The power gain is typically 14 dB. - What is the drain efficiency of the BLF6G38LS-50,118?
The drain efficiency is typically 23%. - Is the BLF6G38LS-50,118 RoHS compliant?
Yes, it is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS). - What are the primary applications of the BLF6G38LS-50,118?
The primary applications are in RF power amplifiers for base stations and multicarrier applications within the specified frequency range. - What is the maximum V DS operation for the BLF6G38LS-50,118?
The maximum V DS operation is 32 V. - Does the BLF6G38LS-50,118 have integrated ESD protection?
Yes, it has integrated ESD protection. - What is the average output power of the BLF6G38LS-50,118?
The average output power is 9 W. - What is the peak output power of the BLF6G38LS-50,118?
The peak output power is up to 70 W.
