BLF6G10-45,112
  • Share:

Ampleon USA Inc. BLF6G10-45,112

Manufacturer No:
BLF6G10-45,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 22.5DB SOT608A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G10-45,112 is a 45 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications. This transistor operates within the frequency range of 700 MHz to 1000 MHz, making it suitable for various wireless communication systems. Although the product has been discontinued, it remains relevant for understanding high-performance RF power amplifiers.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range7001000MHz
P L(3dB)nominal output power at 3 dB gain compressionTest signal: 2-car W-CDMA45W
G ppower gainP L(AV) = 1 W; V DS = 28 V2122.523.9dB
RL ininput return lossP L(AV) = 1 W; V DS = 28 V; I Dq = 350 mA-13-8dB
η Ddrain efficiencyP L(AV) = 1 W; V DS = 28 V; 920 MHz < f < 960 MHz; I Dq = 350 mA6.97.8%
P L(AV)average output power1W
ACPRadjacent channel power ratioP L(AV) = 1 W; V DS = 28 V; 920 MHz < f < 960 MHz; I Dq = 350 mA-48.5-45.5dBc

Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (700 MHz to 1000 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding RoHS

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multicarrier applications in the 700 MHz to 1000 MHz frequency range

Q & A

  1. What is the frequency range of the BLF6G10-45,112 transistor?
    The BLF6G10-45,112 operates within the frequency range of 700 MHz to 1000 MHz.
  2. What is the nominal output power of the BLF6G10-45,112 at 3 dB gain compression?
    The nominal output power is 45 W.
  3. What are the key features of the BLF6G10-45,112?
    Key features include easy power control, integrated ESD protection, excellent ruggedness, high efficiency, excellent thermal stability, and internal matching for ease of use.
  4. What are the typical applications of the BLF6G10-45,112?
    Typical applications include RF power amplifiers for W-CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range.
  5. Is the BLF6G10-45,112 compliant with RoHS Directive 2002/95/EC?
    Yes, it is compliant with RoHS Directive 2002/95/EC.
  6. What is the package type of the BLF6G10-45,112?
    The package type is CDFM2 (SOT608A).
  7. Has the BLF6G10-45,112 been discontinued?
    Yes, the BLF6G10-45,112 has been discontinued.
  8. What is the drain efficiency of the BLF6G10-45,112?
    The drain efficiency is typically 7.8% under specified conditions.
  9. What is the input return loss of the BLF6G10-45,112?
    The input return loss is typically -8 dB under specified conditions.
  10. What is the adjacent channel power ratio (ACPR) of the BLF6G10-45,112?
    The ACPR is typically -45.5 dBc under specified conditions.

Product Attributes

Transistor Type:LDMOS
Frequency:922.5MHz ~ 957.5MHz
Gain:22.5dB
Voltage - Test:28 V
Current Rating (Amps):13A
Noise Figure:- 
Current - Test:350 mA
Power - Output:1W
Voltage - Rated:65 V
Package / Case:SOT-608A
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
555

Please send RFQ , we will respond immediately.

Same Series
BLF6G10-45,135
BLF6G10-45,135
RF FET LDMOS 65V 22.5DB SOT608A

Similar Products

Part Number BLF6G10-45,112 BLF6G10S-45,112 BLF6G20-45,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS
Frequency 922.5MHz ~ 957.5MHz 922.5MHz ~ 957.5MHz 1.8GHz ~ 1.88GHz
Gain 22.5dB 23dB 19.2dB
Voltage - Test 28 V 28 V 28 V
Current Rating (Amps) 13A 13A 13A
Noise Figure - - -
Current - Test 350 mA 350 mA 360 mA
Power - Output 1W 1W 2.5W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-608A SOT-608B SOT-608A
Supplier Device Package CDFM2 CDFM2 CDFM2

Related Product By Categories

BLF647PS,112
BLF647PS,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BF909R,215
BF909R,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
BSS83,235
BSS83,235
NXP USA Inc.
MOSFET N-CH 10V 50MA SOT143
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
NE5550234-T1-AZ
NE5550234-T1-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C

Related Product By Brand

BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
BLF8G22LS-140J
BLF8G22LS-140J
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BLF6G10-45,112
BLF6G10-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G10LS-250
BLF7G10LS-250
Ampleon USA Inc.
RF FET LDMOS 250W SOT502B