BLF6G10-45,112
  • Share:

Ampleon USA Inc. BLF6G10-45,112

Manufacturer No:
BLF6G10-45,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 22.5DB SOT608A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G10-45,112 is a 45 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications. This transistor operates within the frequency range of 700 MHz to 1000 MHz, making it suitable for various wireless communication systems. Although the product has been discontinued, it remains relevant for understanding high-performance RF power amplifiers.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range7001000MHz
P L(3dB)nominal output power at 3 dB gain compressionTest signal: 2-car W-CDMA45W
G ppower gainP L(AV) = 1 W; V DS = 28 V2122.523.9dB
RL ininput return lossP L(AV) = 1 W; V DS = 28 V; I Dq = 350 mA-13-8dB
η Ddrain efficiencyP L(AV) = 1 W; V DS = 28 V; 920 MHz < f < 960 MHz; I Dq = 350 mA6.97.8%
P L(AV)average output power1W
ACPRadjacent channel power ratioP L(AV) = 1 W; V DS = 28 V; 920 MHz < f < 960 MHz; I Dq = 350 mA-48.5-45.5dBc

Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (700 MHz to 1000 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding RoHS

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multicarrier applications in the 700 MHz to 1000 MHz frequency range

Q & A

  1. What is the frequency range of the BLF6G10-45,112 transistor?
    The BLF6G10-45,112 operates within the frequency range of 700 MHz to 1000 MHz.
  2. What is the nominal output power of the BLF6G10-45,112 at 3 dB gain compression?
    The nominal output power is 45 W.
  3. What are the key features of the BLF6G10-45,112?
    Key features include easy power control, integrated ESD protection, excellent ruggedness, high efficiency, excellent thermal stability, and internal matching for ease of use.
  4. What are the typical applications of the BLF6G10-45,112?
    Typical applications include RF power amplifiers for W-CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range.
  5. Is the BLF6G10-45,112 compliant with RoHS Directive 2002/95/EC?
    Yes, it is compliant with RoHS Directive 2002/95/EC.
  6. What is the package type of the BLF6G10-45,112?
    The package type is CDFM2 (SOT608A).
  7. Has the BLF6G10-45,112 been discontinued?
    Yes, the BLF6G10-45,112 has been discontinued.
  8. What is the drain efficiency of the BLF6G10-45,112?
    The drain efficiency is typically 7.8% under specified conditions.
  9. What is the input return loss of the BLF6G10-45,112?
    The input return loss is typically -8 dB under specified conditions.
  10. What is the adjacent channel power ratio (ACPR) of the BLF6G10-45,112?
    The ACPR is typically -45.5 dBc under specified conditions.

Product Attributes

Transistor Type:LDMOS
Frequency:922.5MHz ~ 957.5MHz
Gain:22.5dB
Voltage - Test:28 V
Current Rating (Amps):13A
Noise Figure:- 
Current - Test:350 mA
Power - Output:1W
Voltage - Rated:65 V
Package / Case:SOT-608A
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
555

Please send RFQ , we will respond immediately.

Same Series
BLF6G10-45,135
BLF6G10-45,135
RF FET LDMOS 65V 22.5DB SOT608A

Similar Products

Part Number BLF6G10-45,112 BLF6G10S-45,112 BLF6G20-45,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS
Frequency 922.5MHz ~ 957.5MHz 922.5MHz ~ 957.5MHz 1.8GHz ~ 1.88GHz
Gain 22.5dB 23dB 19.2dB
Voltage - Test 28 V 28 V 28 V
Current Rating (Amps) 13A 13A 13A
Noise Figure - - -
Current - Test 350 mA 350 mA 360 mA
Power - Output 1W 1W 2.5W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-608A SOT-608B SOT-608A
Supplier Device Package CDFM2 CDFM2 CDFM2

Related Product By Categories

BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
BF1211WR,115
BF1211WR,115
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R

Related Product By Brand

BLF574XR,112
BLF574XR,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214A
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
CLF1G0035-50H
CLF1G0035-50H
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G10LS-135R,118
BLF6G10LS-135R,118
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539