NE5550979A-T1-A
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Renesas Electronics America Inc NE5550979A-T1-A

Manufacturer No:
NE5550979A-T1-A
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Description:
RF N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NE5550979A-T1-A is a high-performance RF N-Channel Power MOSFET manufactured by CEL (California Eastern Laboratories), although it is often distributed through various channels including Renesas Electronics America Inc. This component is designed for RF applications, particularly at the 900MHz frequency range, making it suitable for wireless communication systems, amplifiers, and other high-frequency electronic devices.

Key Specifications

SpecificationValue
ManufacturerCEL (California Eastern Laboratories)
Part NumberNE5550979A-T1-A
Transistor TypeLDMOS
Frequency900MHz
Gain22dB
Voltage - Test7.5V
Voltage - Rated30V
Current Rating3A
Current - Test200mA
Power - Output38.6dBm
Package / Case79A
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C ~ 125°C
Mounting TypeSurface Mount
Lead Free Status / RoHS StatusLead free / RoHS Compliant

Key Features

- High Frequency Operation: The NE5550979A-T1-A operates at 900MHz, making it ideal for RF applications.
- High Gain: It offers a gain of 22dB, which is crucial for amplification in wireless communication systems.
- High Power Output: With a power output of 38.6dBm, this MOSFET can handle significant power requirements.
- Low Noise Figure: Although the noise figure is not specified, the component is designed to minimize noise in RF applications.
- Surface Mount Package: The 79A package is suitable for surface mount technology, facilitating easy integration into modern electronic designs.
- RoHS Compliance: The component is lead-free and RoHS compliant, ensuring environmental sustainability.

Applications

- Wireless Communication Systems: Suitable for use in cellular base stations, wireless local area networks (WLAN), and other wireless communication equipment.
- RF Amplifiers: Ideal for amplifying RF signals in various applications.
- High-Frequency Electronic Devices: Can be used in radar systems, satellite communications, and other high-frequency electronic devices.

Q & A

  1. What is the operating frequency of the NE5550979A-T1-A?

    The operating frequency is 900MHz.

  2. What is the gain of the NE5550979A-T1-A?

    The gain is 22dB.

  3. What is the rated voltage of the NE5550979A-T1-A?

    The rated voltage is 30V.

  4. What is the current rating of the NE5550979A-T1-A?

    The current rating is 3A.

  5. What is the power output of the NE5550979A-T1-A?

    The power output is 38.6dBm.

  6. Is the NE5550979A-T1-A RoHS compliant?

    Yes, it is lead-free and RoHS compliant.

  7. What is the operating temperature range of the NE5550979A-T1-A?

    The operating temperature range is -55°C ~ 125°C.

  8. What type of packaging does the NE5550979A-T1-A use?

    The packaging is Tape & Reel (TR) with a 79A package/case.

  9. What is the moisture sensitivity level (MSL) of the NE5550979A-T1-A?

    The MSL is 1 (Unlimited).

  10. What are some common applications of the NE5550979A-T1-A?

    Common applications include wireless communication systems, RF amplifiers, and other high-frequency electronic devices.

Product Attributes

Transistor Type:LDMOS
Frequency:900MHz
Gain:22dB
Voltage - Test:7.5 V
Current Rating (Amps):3A
Noise Figure:- 
Current - Test:200 mA
Power - Output:38.6dBm
Voltage - Rated:30 V
Package / Case:79A
Supplier Device Package:79A
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