MRFE6VP8600HR5
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NXP USA Inc. MRFE6VP8600HR5

Manufacturer No:
MRFE6VP8600HR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 130V 860MHZ NI-1230
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP8600HR5 is a high-performance, broadband RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by NXP USA Inc. This device is optimized for operation across the frequency range of 470 to 860 MHz and is capable of delivering up to 600 watts of continuous wave (CW) output power. Although the MRFE6VP8600H series is discontinued, the MRFE6VP8600HR5 remains a significant component in various RF power applications due to its robust performance and reliability.

Key Specifications

Parameter Value Unit
Frequency Range 470 - 860 MHz
Output Power (Pout) 600 W (Peak), 125 W (Avg. for DVB-T)
Drain-Source Voltage (Vds) 50 V
Gate-Source Voltage (Vgs) -6.0 to +10 V
Power Gain (Gps) 18.8 - 20.0 dB
Drain Efficiency (ηD) 47.1 - 53.1 %
ACPR (Adjacent Channel Power Ratio) -60.5 dBc
Input Return Loss (IRL) -12 dB
Package Type CFM4F (Ceramic, Flange Mount Flat Package)

Key Features

  • Broadband Operation: Optimized for operation from 470 to 860 MHz, making it suitable for a wide range of RF applications.
  • High Power Handling: Capable of handling up to 600 watts of peak output power and 125 watts average output power for DVB-T applications.
  • Integrated Input Matching Network: Enhances power distribution and simplifies the design process.
  • High Efficiency: Offers drain efficiencies ranging from 47.1% to 53.1%, depending on the operating frequency and signal type.
  • Robust VSWR Capability: Can handle greater than 65:1 VSWR through all phase angles, ensuring reliable operation under various load conditions.
  • Extended Gate-Source Voltage Range: From -6.0V to +10V, which improves performance in Class C and Doherty peaking stages.
  • Excellent Thermal Characteristics: Ensures reliable operation with adequate thermal management.
  • RoHS Compliant: Available in tape and reel packaging, adhering to environmental regulations.

Applications

  • Analog and Digital Television Transmitters: Ideal for use in UHF TV transmitters due to its full performance across the complete UHF TV spectrum.
  • RF Power Amplifiers: Suitable for various RF power amplifier applications requiring high power and efficiency.
  • Broadcasting Equipment: Used in broadcasting equipment where high reliability and robust performance are critical.

Q & A

  1. What is the frequency range of the MRFE6VP8600HR5?

    The MRFE6VP8600HR5 operates within the frequency range of 470 to 860 MHz.

  2. What is the maximum output power of the MRFE6VP8600HR5?

    The device can deliver up to 600 watts of peak output power and 125 watts average output power for DVB-T applications.

  3. What is the drain-source voltage of the MRFE6VP8600HR5?

    The drain-source voltage (Vds) is 50 volts.

  4. What is the gate-source voltage range of the MRFE6VP8600HR5?

    The gate-source voltage (Vgs) range is from -6.0V to +10V.

  5. What are the key features of the MRFE6VP8600HR5?

    Key features include broadband operation, high power handling, integrated input matching network, high efficiency, robust VSWR capability, and excellent thermal characteristics.

  6. What applications is the MRFE6VP8600HR5 suited for?

    The device is ideally suited for analog and digital television transmitters, RF power amplifiers, and broadcasting equipment.

  7. Is the MRFE6VP8600HR5 RoHS compliant?

    Yes, the MRFE6VP8600HR5 is RoHS compliant and available in tape and reel packaging.

  8. What is the package type of the MRFE6VP8600HR5?

    The device is packaged in a CFM4F (Ceramic, Flange Mount Flat Package) with 4 terminals.

  9. Can the MRFE6VP8600HR5 handle high VSWR?

    Yes, the device can handle greater than 65:1 VSWR through all phase angles.

  10. Is the MRFE6VP8600H series still in production?

    No, the MRFE6VP8600H series, including the MRFE6VP8600HR5, is discontinued.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:860MHz
Gain:19.3dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.4 A
Power - Output:125W
Voltage - Rated:130 V
Package / Case:NI-1230
Supplier Device Package:NI-1230
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In Stock

$290.94
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Same Series
MRFE6VP8600HR5
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FET RF 2CH 130V 860MHZ NI-1230
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MRFE6VP8600HR6
FET RF 2CH 130V 860MHZ NI1230H
MRFE6VP8600HSR6
MRFE6VP8600HSR6
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Similar Products

Part Number MRFE6VP8600HR5 MRFE6VP8600HSR5 MRFE6VP8600HR6 MRFE6VP5600HR5
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Discontinued at Digi-Key Active
Transistor Type LDMOS (Dual) LDMOS (Dual) LDMOS (Dual) LDMOS (Dual)
Frequency 860MHz 860MHz 860MHz 230MHz
Gain 19.3dB 19.3dB 19.3dB 25dB
Voltage - Test 50 V 50 V 50 V 50 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 1.4 A 1.4 A 1.4 A 100 mA
Power - Output 125W 125W 125W 600W
Voltage - Rated 130 V 130 V 130 V 130 V
Package / Case NI-1230 NI-1230S NI-1230 SOT-979A
Supplier Device Package NI-1230 NI-1230S NI-1230 NI-1230-4H

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