MRFE6VP8600HR5
  • Share:

NXP USA Inc. MRFE6VP8600HR5

Manufacturer No:
MRFE6VP8600HR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 130V 860MHZ NI-1230
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP8600HR5 is a high-performance, broadband RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by NXP USA Inc. This device is optimized for operation across the frequency range of 470 to 860 MHz and is capable of delivering up to 600 watts of continuous wave (CW) output power. Although the MRFE6VP8600H series is discontinued, the MRFE6VP8600HR5 remains a significant component in various RF power applications due to its robust performance and reliability.

Key Specifications

Parameter Value Unit
Frequency Range 470 - 860 MHz
Output Power (Pout) 600 W (Peak), 125 W (Avg. for DVB-T)
Drain-Source Voltage (Vds) 50 V
Gate-Source Voltage (Vgs) -6.0 to +10 V
Power Gain (Gps) 18.8 - 20.0 dB
Drain Efficiency (ηD) 47.1 - 53.1 %
ACPR (Adjacent Channel Power Ratio) -60.5 dBc
Input Return Loss (IRL) -12 dB
Package Type CFM4F (Ceramic, Flange Mount Flat Package)

Key Features

  • Broadband Operation: Optimized for operation from 470 to 860 MHz, making it suitable for a wide range of RF applications.
  • High Power Handling: Capable of handling up to 600 watts of peak output power and 125 watts average output power for DVB-T applications.
  • Integrated Input Matching Network: Enhances power distribution and simplifies the design process.
  • High Efficiency: Offers drain efficiencies ranging from 47.1% to 53.1%, depending on the operating frequency and signal type.
  • Robust VSWR Capability: Can handle greater than 65:1 VSWR through all phase angles, ensuring reliable operation under various load conditions.
  • Extended Gate-Source Voltage Range: From -6.0V to +10V, which improves performance in Class C and Doherty peaking stages.
  • Excellent Thermal Characteristics: Ensures reliable operation with adequate thermal management.
  • RoHS Compliant: Available in tape and reel packaging, adhering to environmental regulations.

Applications

  • Analog and Digital Television Transmitters: Ideal for use in UHF TV transmitters due to its full performance across the complete UHF TV spectrum.
  • RF Power Amplifiers: Suitable for various RF power amplifier applications requiring high power and efficiency.
  • Broadcasting Equipment: Used in broadcasting equipment where high reliability and robust performance are critical.

Q & A

  1. What is the frequency range of the MRFE6VP8600HR5?

    The MRFE6VP8600HR5 operates within the frequency range of 470 to 860 MHz.

  2. What is the maximum output power of the MRFE6VP8600HR5?

    The device can deliver up to 600 watts of peak output power and 125 watts average output power for DVB-T applications.

  3. What is the drain-source voltage of the MRFE6VP8600HR5?

    The drain-source voltage (Vds) is 50 volts.

  4. What is the gate-source voltage range of the MRFE6VP8600HR5?

    The gate-source voltage (Vgs) range is from -6.0V to +10V.

  5. What are the key features of the MRFE6VP8600HR5?

    Key features include broadband operation, high power handling, integrated input matching network, high efficiency, robust VSWR capability, and excellent thermal characteristics.

  6. What applications is the MRFE6VP8600HR5 suited for?

    The device is ideally suited for analog and digital television transmitters, RF power amplifiers, and broadcasting equipment.

  7. Is the MRFE6VP8600HR5 RoHS compliant?

    Yes, the MRFE6VP8600HR5 is RoHS compliant and available in tape and reel packaging.

  8. What is the package type of the MRFE6VP8600HR5?

    The device is packaged in a CFM4F (Ceramic, Flange Mount Flat Package) with 4 terminals.

  9. Can the MRFE6VP8600HR5 handle high VSWR?

    Yes, the device can handle greater than 65:1 VSWR through all phase angles.

  10. Is the MRFE6VP8600H series still in production?

    No, the MRFE6VP8600H series, including the MRFE6VP8600HR5, is discontinued.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:860MHz
Gain:19.3dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.4 A
Power - Output:125W
Voltage - Rated:130 V
Package / Case:NI-1230
Supplier Device Package:NI-1230
0 Remaining View Similar

In Stock

$290.94
4

Please send RFQ , we will respond immediately.

Same Series
MRFE6VP8600HR5
MRFE6VP8600HR5
FET RF 2CH 130V 860MHZ NI-1230
MRFE6VP8600HR6
MRFE6VP8600HR6
FET RF 2CH 130V 860MHZ NI1230H
MRFE6VP8600HSR6
MRFE6VP8600HSR6
FET RF 2CH 130V 860MHZ NI1230S

Similar Products

Part Number MRFE6VP8600HR5 MRFE6VP8600HSR5 MRFE6VP8600HR6 MRFE6VP5600HR5
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Discontinued at Digi-Key Active
Transistor Type LDMOS (Dual) LDMOS (Dual) LDMOS (Dual) LDMOS (Dual)
Frequency 860MHz 860MHz 860MHz 230MHz
Gain 19.3dB 19.3dB 19.3dB 25dB
Voltage - Test 50 V 50 V 50 V 50 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 1.4 A 1.4 A 1.4 A 100 mA
Power - Output 125W 125W 125W 600W
Voltage - Rated 130 V 130 V 130 V 130 V
Package / Case NI-1230 NI-1230S NI-1230 SOT-979A
Supplier Device Package NI-1230 NI-1230S NI-1230 NI-1230-4H

Related Product By Categories

MMRF5014HR5
MMRF5014HR5
NXP USA Inc.
FET RF 125V 2.5GHZ NI360
PD55015TR-E
PD55015TR-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF6G21-10G,135
BLF6G21-10G,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BF998,235
BF998,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BF545A,215
BF545A,215
NXP USA Inc.
JFET N-CH 30V 6.5MA SOT23
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B

Related Product By Brand

BUK7Y7R6-40E/GFX
BUK7Y7R6-40E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
MC912DG128ACPVE
MC912DG128ACPVE
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 112LQFP
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
MK10DX256VLK7R
MK10DX256VLK7R
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
MCIMX6S5EVM10AB
MCIMX6S5EVM10AB
NXP USA Inc.
IC MPU I.MX6S 1.0GHZ 624MAPBGA
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
SC28L198A1A,529
SC28L198A1A,529
NXP USA Inc.
IC UART OCTAL SOT189-3
PCF7941ATSM2AB120,
PCF7941ATSM2AB120,
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20SSOP
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN