CLF1G0035-100H
  • Share:

Ampleon USA Inc. CLF1G0035-100H

Manufacturer No:
CLF1G0035-100H
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0035-100 - 100W BROADBAND R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0035-100 is a broadband general-purpose 100 W RF power amplifier from Ampleon USA Inc., utilizing first-generation GaN HEMT technology. This device is designed for a wide range of applications requiring high-power RF amplification across a broad frequency spectrum.

The component has been transferred from Ampleon to Rochester Electronics, ensuring continued availability and support.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range Frequency range 0 - 3500 - MHz
P L(1dB) Nominal output power at 1 dB gain compression 100 W - 100 - W
V DS Drain-source voltage P L = 100 W - 50 - V
η D Drain efficiency P L = 100 W 46 - 53 %
G p Power gain P L = 100 W 7.8 - 12 dB
RL in Input return loss P L = 100 W -5 -2.5 - dB
P droop(pulse) Pulse droop power P L = 100 W - 0.04 - dB
t r Rise time P L = 100 W - 5 - ns
t f Fall time P L = 100 W - 5 - ns

Key Features

  • Frequency of operation from DC to 3.5 GHz
  • 100 W general-purpose broadband RF power GaN HEMT
  • Excellent ruggedness with VSWR 10:1
  • High voltage operation at 50 V
  • Thermally enhanced package for improved heat dissipation

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX)
  • Radar systems
  • Broadband general-purpose amplifiers
  • Public mobile radios
  • Industrial, Scientific, Medical (ISM) applications
  • Jammers
  • EMC testing
  • Defense applications

Q & A

  1. What is the frequency range of the CLF1G0035-100?

    The frequency range of the CLF1G0035-100 is from DC to 3.5 GHz.

  2. What is the nominal output power of the CLF1G0035-100?

    The nominal output power of the CLF1G0035-100 is 100 W at 1 dB gain compression.

  3. What is the drain-source voltage of the CLF1G0035-100?

    The drain-source voltage of the CLF1G0035-100 is 50 V.

  4. What is the drain efficiency of the CLF1G0035-100?

    The drain efficiency of the CLF1G0035-100 ranges from 46% to 53%.

  5. What is the power gain of the CLF1G0035-100?

    The power gain of the CLF1G0035-100 is between 7.8 dB and 12 dB.

  6. What is the input return loss of the CLF1G0035-100?

    The input return loss of the CLF1G0035-100 is between -5 dB and -2.5 dB.

  7. What is the pulse droop power of the CLF1G0035-100?

    The pulse droop power of the CLF1G0035-100 is 0.04 dB.

  8. What are the rise and fall times of the CLF1G0035-100?

    The rise and fall times of the CLF1G0035-100 are both 5 ns.

  9. In what package is the CLF1G0035-100 available?

    The CLF1G0035-100 is available in the SOT467C package.

  10. What are some common applications of the CLF1G0035-100?

    The CLF1G0035-100 is used in commercial wireless infrastructure, radar systems, broadband general-purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

Product Attributes

Transistor Type:GaN HEMT
Frequency:3GHz
Gain:12dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:330 mA
Power - Output:100W
Voltage - Rated:150 V
Package / Case:SOT467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

-
589

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CLF1G0035-100H CLF1G0035-100P
Manufacturer Ampleon USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type GaN HEMT HEMT
Frequency 3GHz 3.5GHz
Gain 12dB 12.5dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 330 mA 330 mA
Power - Output 100W 100W
Voltage - Rated 150 V 150 V
Package / Case SOT467C SOT-1228A
Supplier Device Package SOT467C LDMOST

Related Product By Categories

MRFE6S9060NR1
MRFE6S9060NR1
NXP USA Inc.
FET RF 66V 880MHZ TO270-2
AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF6G38LS-50,112
BLF6G38LS-50,112
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF7G20LS-250P,112
BLF7G20LS-250P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B

Related Product By Brand

MX0912B351Y,114
MX0912B351Y,114
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G22LS-130,112
BLF6G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF7G27LS-150P,112
BLF7G27LS-150P,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539