CLF1G0035-100H
  • Share:

Ampleon USA Inc. CLF1G0035-100H

Manufacturer No:
CLF1G0035-100H
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0035-100 - 100W BROADBAND R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0035-100 is a broadband general-purpose 100 W RF power amplifier from Ampleon USA Inc., utilizing first-generation GaN HEMT technology. This device is designed for a wide range of applications requiring high-power RF amplification across a broad frequency spectrum.

The component has been transferred from Ampleon to Rochester Electronics, ensuring continued availability and support.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range Frequency range 0 - 3500 - MHz
P L(1dB) Nominal output power at 1 dB gain compression 100 W - 100 - W
V DS Drain-source voltage P L = 100 W - 50 - V
η D Drain efficiency P L = 100 W 46 - 53 %
G p Power gain P L = 100 W 7.8 - 12 dB
RL in Input return loss P L = 100 W -5 -2.5 - dB
P droop(pulse) Pulse droop power P L = 100 W - 0.04 - dB
t r Rise time P L = 100 W - 5 - ns
t f Fall time P L = 100 W - 5 - ns

Key Features

  • Frequency of operation from DC to 3.5 GHz
  • 100 W general-purpose broadband RF power GaN HEMT
  • Excellent ruggedness with VSWR 10:1
  • High voltage operation at 50 V
  • Thermally enhanced package for improved heat dissipation

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX)
  • Radar systems
  • Broadband general-purpose amplifiers
  • Public mobile radios
  • Industrial, Scientific, Medical (ISM) applications
  • Jammers
  • EMC testing
  • Defense applications

Q & A

  1. What is the frequency range of the CLF1G0035-100?

    The frequency range of the CLF1G0035-100 is from DC to 3.5 GHz.

  2. What is the nominal output power of the CLF1G0035-100?

    The nominal output power of the CLF1G0035-100 is 100 W at 1 dB gain compression.

  3. What is the drain-source voltage of the CLF1G0035-100?

    The drain-source voltage of the CLF1G0035-100 is 50 V.

  4. What is the drain efficiency of the CLF1G0035-100?

    The drain efficiency of the CLF1G0035-100 ranges from 46% to 53%.

  5. What is the power gain of the CLF1G0035-100?

    The power gain of the CLF1G0035-100 is between 7.8 dB and 12 dB.

  6. What is the input return loss of the CLF1G0035-100?

    The input return loss of the CLF1G0035-100 is between -5 dB and -2.5 dB.

  7. What is the pulse droop power of the CLF1G0035-100?

    The pulse droop power of the CLF1G0035-100 is 0.04 dB.

  8. What are the rise and fall times of the CLF1G0035-100?

    The rise and fall times of the CLF1G0035-100 are both 5 ns.

  9. In what package is the CLF1G0035-100 available?

    The CLF1G0035-100 is available in the SOT467C package.

  10. What are some common applications of the CLF1G0035-100?

    The CLF1G0035-100 is used in commercial wireless infrastructure, radar systems, broadband general-purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

Product Attributes

Transistor Type:GaN HEMT
Frequency:3GHz
Gain:12dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:330 mA
Power - Output:100W
Voltage - Rated:150 V
Package / Case:SOT467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

-
589

Please send RFQ , we will respond immediately.

Same Series
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CLF1G0035-100H CLF1G0035-100P
Manufacturer Ampleon USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type GaN HEMT HEMT
Frequency 3GHz 3.5GHz
Gain 12dB 12.5dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 330 mA 330 mA
Power - Output 100W 100W
Voltage - Rated 150 V 150 V
Package / Case SOT467C SOT-1228A
Supplier Device Package SOT467C LDMOST

Related Product By Categories

BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
PD85035S-E
PD85035S-E
STMicroelectronics
FET RF 40V 870MHZ
BLF8G22LS-220J
BLF8G22LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
BF1212,215
BF1212,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143B
BF1211WR,115
BF1211WR,115
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
NE5550279A-A
NE5550279A-A
CEL
FET RF 30V 900MHZ 79A
BLF7G24LS-100
BLF7G24LS-100
Ampleon USA Inc.
RF FET LDMOS 100W SOT502B
BF909R,235
BF909R,235
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
A2T07H310-24SR6
A2T07H310-24SR6
NXP USA Inc.
FET RF 2CH 70V 880MHZ

Related Product By Brand

BLF884P,112
BLF884P,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121A
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539