CLF1G0035-100H
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Ampleon USA Inc. CLF1G0035-100H

Manufacturer No:
CLF1G0035-100H
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0035-100 - 100W BROADBAND R
Delivery:
Payment:
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Product Introduction

Overview

The CLF1G0035-100 is a broadband general-purpose 100 W RF power amplifier from Ampleon USA Inc., utilizing first-generation GaN HEMT technology. This device is designed for a wide range of applications requiring high-power RF amplification across a broad frequency spectrum.

The component has been transferred from Ampleon to Rochester Electronics, ensuring continued availability and support.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range Frequency range 0 - 3500 - MHz
P L(1dB) Nominal output power at 1 dB gain compression 100 W - 100 - W
V DS Drain-source voltage P L = 100 W - 50 - V
η D Drain efficiency P L = 100 W 46 - 53 %
G p Power gain P L = 100 W 7.8 - 12 dB
RL in Input return loss P L = 100 W -5 -2.5 - dB
P droop(pulse) Pulse droop power P L = 100 W - 0.04 - dB
t r Rise time P L = 100 W - 5 - ns
t f Fall time P L = 100 W - 5 - ns

Key Features

  • Frequency of operation from DC to 3.5 GHz
  • 100 W general-purpose broadband RF power GaN HEMT
  • Excellent ruggedness with VSWR 10:1
  • High voltage operation at 50 V
  • Thermally enhanced package for improved heat dissipation

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX)
  • Radar systems
  • Broadband general-purpose amplifiers
  • Public mobile radios
  • Industrial, Scientific, Medical (ISM) applications
  • Jammers
  • EMC testing
  • Defense applications

Q & A

  1. What is the frequency range of the CLF1G0035-100?

    The frequency range of the CLF1G0035-100 is from DC to 3.5 GHz.

  2. What is the nominal output power of the CLF1G0035-100?

    The nominal output power of the CLF1G0035-100 is 100 W at 1 dB gain compression.

  3. What is the drain-source voltage of the CLF1G0035-100?

    The drain-source voltage of the CLF1G0035-100 is 50 V.

  4. What is the drain efficiency of the CLF1G0035-100?

    The drain efficiency of the CLF1G0035-100 ranges from 46% to 53%.

  5. What is the power gain of the CLF1G0035-100?

    The power gain of the CLF1G0035-100 is between 7.8 dB and 12 dB.

  6. What is the input return loss of the CLF1G0035-100?

    The input return loss of the CLF1G0035-100 is between -5 dB and -2.5 dB.

  7. What is the pulse droop power of the CLF1G0035-100?

    The pulse droop power of the CLF1G0035-100 is 0.04 dB.

  8. What are the rise and fall times of the CLF1G0035-100?

    The rise and fall times of the CLF1G0035-100 are both 5 ns.

  9. In what package is the CLF1G0035-100 available?

    The CLF1G0035-100 is available in the SOT467C package.

  10. What are some common applications of the CLF1G0035-100?

    The CLF1G0035-100 is used in commercial wireless infrastructure, radar systems, broadband general-purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

Product Attributes

Transistor Type:GaN HEMT
Frequency:3GHz
Gain:12dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:330 mA
Power - Output:100W
Voltage - Rated:150 V
Package / Case:SOT467C
Supplier Device Package:SOT467C
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Similar Products

Part Number CLF1G0035-100H CLF1G0035-100P
Manufacturer Ampleon USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type GaN HEMT HEMT
Frequency 3GHz 3.5GHz
Gain 12dB 12.5dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 330 mA 330 mA
Power - Output 100W 100W
Voltage - Rated 150 V 150 V
Package / Case SOT467C SOT-1228A
Supplier Device Package SOT467C LDMOST

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