CLF1G0035-100H
  • Share:

Ampleon USA Inc. CLF1G0035-100H

Manufacturer No:
CLF1G0035-100H
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0035-100 - 100W BROADBAND R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0035-100 is a broadband general-purpose 100 W RF power amplifier from Ampleon USA Inc., utilizing first-generation GaN HEMT technology. This device is designed for a wide range of applications requiring high-power RF amplification across a broad frequency spectrum.

The component has been transferred from Ampleon to Rochester Electronics, ensuring continued availability and support.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range Frequency range 0 - 3500 - MHz
P L(1dB) Nominal output power at 1 dB gain compression 100 W - 100 - W
V DS Drain-source voltage P L = 100 W - 50 - V
η D Drain efficiency P L = 100 W 46 - 53 %
G p Power gain P L = 100 W 7.8 - 12 dB
RL in Input return loss P L = 100 W -5 -2.5 - dB
P droop(pulse) Pulse droop power P L = 100 W - 0.04 - dB
t r Rise time P L = 100 W - 5 - ns
t f Fall time P L = 100 W - 5 - ns

Key Features

  • Frequency of operation from DC to 3.5 GHz
  • 100 W general-purpose broadband RF power GaN HEMT
  • Excellent ruggedness with VSWR 10:1
  • High voltage operation at 50 V
  • Thermally enhanced package for improved heat dissipation

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX)
  • Radar systems
  • Broadband general-purpose amplifiers
  • Public mobile radios
  • Industrial, Scientific, Medical (ISM) applications
  • Jammers
  • EMC testing
  • Defense applications

Q & A

  1. What is the frequency range of the CLF1G0035-100?

    The frequency range of the CLF1G0035-100 is from DC to 3.5 GHz.

  2. What is the nominal output power of the CLF1G0035-100?

    The nominal output power of the CLF1G0035-100 is 100 W at 1 dB gain compression.

  3. What is the drain-source voltage of the CLF1G0035-100?

    The drain-source voltage of the CLF1G0035-100 is 50 V.

  4. What is the drain efficiency of the CLF1G0035-100?

    The drain efficiency of the CLF1G0035-100 ranges from 46% to 53%.

  5. What is the power gain of the CLF1G0035-100?

    The power gain of the CLF1G0035-100 is between 7.8 dB and 12 dB.

  6. What is the input return loss of the CLF1G0035-100?

    The input return loss of the CLF1G0035-100 is between -5 dB and -2.5 dB.

  7. What is the pulse droop power of the CLF1G0035-100?

    The pulse droop power of the CLF1G0035-100 is 0.04 dB.

  8. What are the rise and fall times of the CLF1G0035-100?

    The rise and fall times of the CLF1G0035-100 are both 5 ns.

  9. In what package is the CLF1G0035-100 available?

    The CLF1G0035-100 is available in the SOT467C package.

  10. What are some common applications of the CLF1G0035-100?

    The CLF1G0035-100 is used in commercial wireless infrastructure, radar systems, broadband general-purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

Product Attributes

Transistor Type:GaN HEMT
Frequency:3GHz
Gain:12dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:330 mA
Power - Output:100W
Voltage - Rated:150 V
Package / Case:SOT467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

-
589

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CLF1G0035-100H CLF1G0035-100P
Manufacturer Ampleon USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type GaN HEMT HEMT
Frequency 3GHz 3.5GHz
Gain 12dB 12.5dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 330 mA 330 mA
Power - Output 100W 100W
Voltage - Rated 150 V 150 V
Package / Case SOT467C SOT-1228A
Supplier Device Package SOT467C LDMOST

Related Product By Categories

AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
BLF7G24LS-140,118
BLF7G24LS-140,118
NXP USA Inc.
N-CHANNEL, MOSFET
AFT05MS004NT1
AFT05MS004NT1
NXP USA Inc.
FET RF 30V 520MHZ PLD
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
A3I20X050GNR1
A3I20X050GNR1
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF6G10-45,112
BLF6G10-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C

Related Product By Brand

LYE16350XH
LYE16350XH
Ampleon USA Inc.
LYE16350XH - RF POWER TRANSISTOR
BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
BLF888BS,112
BLF888BS,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539B
BLF177R
BLF177R
Ampleon USA Inc.
HF/VHF POWER VDMOS TRANSISTOR (
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
CLF1G0035-100,112
CLF1G0035-100,112
Ampleon USA Inc.
RF MOSFET HEMT 50V SOT467C
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF3G21-30,112
BLF3G21-30,112
Ampleon USA Inc.
RF FET LDMOS 65V 13.5DB SOT467C
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B