BF1202WR,135
  • Share:

NXP USA Inc. BF1202WR,135

Manufacturer No:
BF1202WR,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH DUAL GATE 4DFP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF1202WR,135 is an N-channel dual-gate MOSFET produced by NXP USA Inc. This component is packaged in a CMPAK-4 plastic surface-mounted package with reverse pinning. It is designed for various electronic applications requiring low power consumption and high reliability.

Key Specifications

ParameterValue
Package TypeCMPAK-4 (plastic surface-mounted package with reverse pinning)
Channel TypeN-channel
Gate ConfigurationDual-gate
Drain-Source Voltage (Vds)10 V
Drain Current (Id)0.03 A
Number of Pins4 (3+Tab)
RoHS ComplianceCompliant (depending on the specific variant)

Key Features

  • N-channel dual-gate MOSFET for enhanced control and performance.
  • Low power consumption suitable for energy-efficient applications.
  • CMPAK-4 package with reverse pinning for ease of mounting and reduced footprint.
  • High reliability and durability in various operating conditions.

Applications

The BF1202WR,135 is suitable for a variety of applications including but not limited to:

  • Low-power switching circuits.
  • Audio and radio frequency (RF) amplifiers.
  • Power management and control systems.
  • Consumer electronics and industrial control devices.

Q & A

  1. What is the package type of the BF1202WR,135? The BF1202WR,135 is packaged in a CMPAK-4 plastic surface-mounted package with reverse pinning.
  2. What is the channel type of this MOSFET? The BF1202WR,135 is an N-channel MOSFET.
  3. What is the maximum drain-source voltage (Vds) for this component? The maximum drain-source voltage (Vds) is 10 V.
  4. What is the maximum drain current (Id) for this component? The maximum drain current (Id) is 0.03 A.
  5. Is the BF1202WR,135 RoHS compliant? Yes, the BF1202WR,135 is RoHS compliant, depending on the specific variant.
  6. What are the typical applications of the BF1202WR,135? Typical applications include low-power switching circuits, audio and RF amplifiers, power management, and consumer electronics.
  7. Is the BF1202WR,135 still in production? No, the BF1202WR,135 is no longer manufactured, but it can be sourced from distributors and secondary suppliers.
  8. Where can I find the datasheet for the BF1202WR,135? The datasheet can be found on the NXP Semiconductors website or through distributors like Digi-Key and Mouser.
  9. What is the significance of the dual-gate configuration in the BF1202WR,135? The dual-gate configuration provides enhanced control and performance, particularly useful in RF and audio applications.
  10. How many pins does the BF1202WR,135 have? The BF1202WR,135 has 4 pins (3+Tab).

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:400MHz
Gain:30.5dB
Voltage - Test:5 V
Current Rating (Amps):30mA
Noise Figure:0.9dB
Current - Test:12 mA
Power - Output:- 
Voltage - Rated:10 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
0 Remaining View Similar

In Stock

$0.18
5,194

Please send RFQ , we will respond immediately.

Same Series
BF1202R,215
BF1202R,215
MOSFET 2N-CH 10V 30MA SOT143R
BF1202,215
BF1202,215
MOSFET 2N-CH 10V 30MA SOT143B
BF1202WR,115
BF1202WR,115
MOSFET 2N-CH 10V 30MA SOT343R

Similar Products

Part Number BF1202WR,135 BF1201WR,135 BF1202WR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 400MHz 400MHz 400MHz
Gain 30.5dB 29dB 30.5dB
Voltage - Test 5 V 5 V 5 V
Current Rating (Amps) 30mA 30mA 30mA
Noise Figure 0.9dB 1dB 0.9dB
Current - Test 12 mA 15 mA 12 mA
Power - Output - - -
Voltage - Rated 10 V 10 V 10 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4 CMPAK-4

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
PD55025S-E
PD55025S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF6G10LS-260PRN:1
BLF6G10LS-260PRN:1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BF861B,235
BF861B,235
NXP USA Inc.
JFET N-CH 25V 15MA SOT23
SD2918
SD2918
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M113
MMBF4416LT1G
MMBF4416LT1G
onsemi
JFET N-CH 30V 15MA SOT23
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B

Related Product By Brand

BC817DPN/DG/B2115
BC817DPN/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
S9S12G48ACLF
S9S12G48ACLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
S9S12G48F0MLFR
S9S12G48F0MLFR
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
SPC5777CCK3MME3
SPC5777CCK3MME3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 416MAPBGA
LPC2294HBD144/01,5
LPC2294HBD144/01,5
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
MC33771BTA1AER2
MC33771BTA1AER2
NXP USA Inc.
14-CHANNEL LI-ION BATTERY CELL C
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,
PCF7961MTT/D1AC13J
PCF7961MTT/D1AC13J
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20TSSOP
MFRC53001T/0FE,112
MFRC53001T/0FE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO