Overview
The AFT18H357-24NR6 is a high-performance RF Power LDMOS (Laterally Diffused MOSFET) transistor manufactured by NXP Semiconductors, formerly known as Freescale Semiconductor. This device is part of the Airfast RF Power series and is designed for high-frequency applications, particularly in the range of 1805-1995 MHz. It is known for its high output power, efficiency, and reliability, making it suitable for various RF power amplification needs.
Key Specifications
| Attribute | Value |
|---|---|
| Manufacturer | NXP Semiconductors / Freescale |
| Category | Transistors - FETs, MOSFETs - RF |
| Transistor Type | LDMOS (Dual) |
| Frequency | 1.81 GHz |
| Gain | 17.5 dB |
| Voltage - Test | 28 V |
| Voltage - Rated | 65 V |
| Current - Test | 800 mA |
| Power - Output | 63 W |
| Package / Case | OM-1230-4L2L |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | Lead free / RoHS Compliant |
Key Features
- High output power of 63 W, making it suitable for high-power RF applications.
- Operates within the frequency range of 1805-1995 MHz, ideal for various wireless communication systems.
- High gain of 17.5 dB, enhancing signal amplification efficiency.
- LDMOS (Laterally Diffused MOSFET) technology for high reliability and performance.
- Rated voltage of 65 V and test voltage of 28 V, ensuring robust operation under different conditions.
- Lead-free and RoHS compliant, adhering to environmental standards.
Applications
The AFT18H357-24NR6 is widely used in various RF power amplification applications, including:
- Wireless communication systems such as base stations and repeaters.
- Broadcasting equipment, including TV and radio transmitters.
- Radar systems and other military communication devices.
- Industrial and medical RF generators.
- Aerospace and defense applications requiring high-power RF amplification.
Q & A
- What is the AFT18H357-24NR6 used for? The AFT18H357-24NR6 is used for high-power RF amplification in various applications, including wireless communication systems, broadcasting equipment, radar systems, and industrial/medical RF generators.
- What is the frequency range of the AFT18H357-24NR6? The AFT18H357-24NR6 operates within the frequency range of 1805-1995 MHz.
- What is the output power of the AFT18H357-24NR6? The output power of the AFT18H357-24NR6 is 63 W.
- What is the gain of the AFT18H357-24NR6? The gain of the AFT18H357-24NR6 is 17.5 dB.
- What is the rated voltage of the AFT18H357-24NR6? The rated voltage of the AFT18H357-24NR6 is 65 V.
- Is the AFT18H357-24NR6 RoHS compliant? Yes, the AFT18H357-24NR6 is lead-free and RoHS compliant.
- What is the moisture sensitivity level (MSL) of the AFT18H357-24NR6? The MSL of the AFT18H357-24NR6 is 3 (168 Hours).
- What package type does the AFT18H357-24NR6 use? The AFT18H357-24NR6 uses the OM-1230-4L2L package.
- Who is the manufacturer of the AFT18H357-24NR6? The AFT18H357-24NR6 is manufactured by NXP Semiconductors, formerly known as Freescale Semiconductor.
- What is the current rating of the AFT18H357-24NR6 during testing? The current rating during testing is 800 mA.
