BF908WR,115
  • Share:

NXP USA Inc. BF908WR,115

Manufacturer No:
BF908WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET NCH DUAL GATE 12V CMPAK-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF908WR,115 is an N-channel dual-gate RF MOSFET produced by NXP USA Inc. This component is designed for RF applications and is characterized by its stable and efficient operation. Although it is no longer in production, it remains relevant for legacy systems and specific RF requirements.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Technology Silicon (Si)
Id - Continuous Drain Current 40 mA
Vds - Drain-Source Breakdown Voltage 12 V
Operating Frequency Up to 1 GHz
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) +150
Mounting Style SMD/SMT
Channel Mode Enhancement
Configuration Dual Gate
Package 4-SOT-343R
Pd - Power Dissipation 200 mW
Vgs - Gate-Source Voltage Up to 12 V

Key Features

  • Dual-gate design ensuring stable and efficient operation.
  • High-frequency performance suitable for RF applications up to 1 GHz.
  • Low noise operation, making it ideal for wireless communication systems.
  • Enhancement mode operation with a continuous drain current of 40 mA.
  • Compact SMD/SMT package (4-SOT-343R) for space-efficient designs.

Applications

  • Wireless communication systems, including UHF band applications.
  • RF amplifiers and switches in various communication devices.
  • Legacy systems that require specific RF MOSFET characteristics.
  • High-frequency circuits where low noise and stable operation are crucial.

Q & A

  1. What is the BF908WR,115?

    The BF908WR,115 is an N-channel dual-gate RF MOSFET produced by NXP USA Inc.

  2. What is the continuous drain current of the BF908WR,115?

    The continuous drain current is 40 mA.

  3. What is the drain-source breakdown voltage of the BF908WR,115?

    The drain-source breakdown voltage is 12 V.

  4. What is the operating frequency range of the BF908WR,115?

    The operating frequency range is up to 1 GHz.

  5. What is the package type of the BF908WR,115?

    The package type is 4-SOT-343R.

  6. Is the BF908WR,115 still in production?

    No, the BF908WR,115 is no longer manufactured.

  7. What are the typical applications of the BF908WR,115?

    Typical applications include wireless communication systems, RF amplifiers, and high-frequency circuits.

  8. What are the key features of the BF908WR,115?
  9. What is the power dissipation of the BF908WR,115?

    The power dissipation is 200 mW.

  10. What are the operating temperature ranges of the BF908WR,115?

    The operating temperature ranges from -55°C to +150°C.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:200MHz
Gain:- 
Voltage - Test:8 V
Current Rating (Amps):40mA
Noise Figure:0.6dB
Current - Test:15 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
0 Remaining View Similar

In Stock

-
381

Please send RFQ , we will respond immediately.

Similar Products

Part Number BF908WR,115 BF998WR,115 BF909WR,115 BF904WR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 200MHz 200MHz 800MHz 200MHz
Gain - - - -
Voltage - Test 8 V 8 V 5 V 5 V
Current Rating (Amps) 40mA 30mA 40mA 30mA
Noise Figure 0.6dB 0.6dB 2dB 1dB
Current - Test 15 mA 10 mA 15 mA 10 mA
Power - Output - - - -
Voltage - Rated 12 V 12 V 7 V 7 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4 CMPAK-4 CMPAK-4

Related Product By Categories

BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
AFT20S015GNR1
AFT20S015GNR1
NXP USA Inc.
FET RF 65V 2.17GHZ TO270-2G
PD57018TR-E
PD57018TR-E
STMicroelectronics
TRANSISTOR RF POWERSO-10
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
A2V07H525-04NR6
A2V07H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF2043F,135
BLF2043F,135
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
BF861B
BF861B
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
MC9S12XEQ512CAA
MC9S12XEQ512CAA
NXP USA Inc.
IC MCU 16BIT 512KB FLASH 80QFP
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
MKE02Z64VQH4
MKE02Z64VQH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64QFP
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
74LV08D/C118
74LV08D/C118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74HC139D-Q100118
74HC139D-Q100118
NXP USA Inc.
DECODER/DRIVER, HC/UH SERIES
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
PCF7961MTT/D1AC13J
PCF7961MTT/D1AC13J
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20TSSOP
PN5120A0HN1/C1,118
PN5120A0HN1/C1,118
NXP USA Inc.
IC RFID RDR/TRAN 13.56MZ 32HVQFN