BF908WR,115
  • Share:

NXP USA Inc. BF908WR,115

Manufacturer No:
BF908WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET NCH DUAL GATE 12V CMPAK-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF908WR,115 is an N-channel dual-gate RF MOSFET produced by NXP USA Inc. This component is designed for RF applications and is characterized by its stable and efficient operation. Although it is no longer in production, it remains relevant for legacy systems and specific RF requirements.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Technology Silicon (Si)
Id - Continuous Drain Current 40 mA
Vds - Drain-Source Breakdown Voltage 12 V
Operating Frequency Up to 1 GHz
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) +150
Mounting Style SMD/SMT
Channel Mode Enhancement
Configuration Dual Gate
Package 4-SOT-343R
Pd - Power Dissipation 200 mW
Vgs - Gate-Source Voltage Up to 12 V

Key Features

  • Dual-gate design ensuring stable and efficient operation.
  • High-frequency performance suitable for RF applications up to 1 GHz.
  • Low noise operation, making it ideal for wireless communication systems.
  • Enhancement mode operation with a continuous drain current of 40 mA.
  • Compact SMD/SMT package (4-SOT-343R) for space-efficient designs.

Applications

  • Wireless communication systems, including UHF band applications.
  • RF amplifiers and switches in various communication devices.
  • Legacy systems that require specific RF MOSFET characteristics.
  • High-frequency circuits where low noise and stable operation are crucial.

Q & A

  1. What is the BF908WR,115?

    The BF908WR,115 is an N-channel dual-gate RF MOSFET produced by NXP USA Inc.

  2. What is the continuous drain current of the BF908WR,115?

    The continuous drain current is 40 mA.

  3. What is the drain-source breakdown voltage of the BF908WR,115?

    The drain-source breakdown voltage is 12 V.

  4. What is the operating frequency range of the BF908WR,115?

    The operating frequency range is up to 1 GHz.

  5. What is the package type of the BF908WR,115?

    The package type is 4-SOT-343R.

  6. Is the BF908WR,115 still in production?

    No, the BF908WR,115 is no longer manufactured.

  7. What are the typical applications of the BF908WR,115?

    Typical applications include wireless communication systems, RF amplifiers, and high-frequency circuits.

  8. What are the key features of the BF908WR,115?
  9. What is the power dissipation of the BF908WR,115?

    The power dissipation is 200 mW.

  10. What are the operating temperature ranges of the BF908WR,115?

    The operating temperature ranges from -55°C to +150°C.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:200MHz
Gain:- 
Voltage - Test:8 V
Current Rating (Amps):40mA
Noise Figure:0.6dB
Current - Test:15 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
0 Remaining View Similar

In Stock

-
381

Please send RFQ , we will respond immediately.

Similar Products

Part Number BF908WR,115 BF998WR,115 BF909WR,115 BF904WR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 200MHz 200MHz 800MHz 200MHz
Gain - - - -
Voltage - Test 8 V 8 V 5 V 5 V
Current Rating (Amps) 40mA 30mA 40mA 30mA
Noise Figure 0.6dB 0.6dB 2dB 1dB
Current - Test 15 mA 10 mA 15 mA 10 mA
Power - Output - - - -
Voltage - Rated 12 V 12 V 7 V 7 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4 CMPAK-4 CMPAK-4

Related Product By Categories

MRF6V12500HR5
MRF6V12500HR5
NXP USA Inc.
FET RF 110V 1.03GHZ NI-780H
AFT18H357-24NR6
AFT18H357-24NR6
Freescale Semiconductor
AIRFAST RF POWER LDMOS TRANSISTO
CLF1G0035-100
CLF1G0035-100
Rochester Electronics, LLC
CLF1G0035-100 - 100W BROADBAND R
PD55003-E
PD55003-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF8G22LS-220J
BLF8G22LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
SD2918
SD2918
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M113
BF1107,215
BF1107,215
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23
BLF7G27LS-150P,112
BLF7G27LS-150P,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF7G24LS-100
BLF7G24LS-100
Ampleon USA Inc.
RF FET LDMOS 100W SOT502B

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
BC807-25/L215
BC807-25/L215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
LPC2194HBD64/01,15
LPC2194HBD64/01,15
NXP USA Inc.
IC MCU 16/32B 256KB FLASH 64LQFP
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
S9S12G128F0CLLR
S9S12G128F0CLLR
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 100LQFP
P89LPC954FBD48,151
P89LPC954FBD48,151
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
74LV08D/C4118
74LV08D/C4118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
PCA85133U/2DA/Q1Z
PCA85133U/2DA/Q1Z
NXP USA Inc.
IC DRVR 7 SEGMENT DIE
TLVH431CDBZR,215
TLVH431CDBZR,215
NXP USA Inc.
IC VREF SHUNT ADJ 1.5% TO236AB
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD