BF908WR,115
  • Share:

NXP USA Inc. BF908WR,115

Manufacturer No:
BF908WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET NCH DUAL GATE 12V CMPAK-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF908WR,115 is an N-channel dual-gate RF MOSFET produced by NXP USA Inc. This component is designed for RF applications and is characterized by its stable and efficient operation. Although it is no longer in production, it remains relevant for legacy systems and specific RF requirements.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Technology Silicon (Si)
Id - Continuous Drain Current 40 mA
Vds - Drain-Source Breakdown Voltage 12 V
Operating Frequency Up to 1 GHz
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) +150
Mounting Style SMD/SMT
Channel Mode Enhancement
Configuration Dual Gate
Package 4-SOT-343R
Pd - Power Dissipation 200 mW
Vgs - Gate-Source Voltage Up to 12 V

Key Features

  • Dual-gate design ensuring stable and efficient operation.
  • High-frequency performance suitable for RF applications up to 1 GHz.
  • Low noise operation, making it ideal for wireless communication systems.
  • Enhancement mode operation with a continuous drain current of 40 mA.
  • Compact SMD/SMT package (4-SOT-343R) for space-efficient designs.

Applications

  • Wireless communication systems, including UHF band applications.
  • RF amplifiers and switches in various communication devices.
  • Legacy systems that require specific RF MOSFET characteristics.
  • High-frequency circuits where low noise and stable operation are crucial.

Q & A

  1. What is the BF908WR,115?

    The BF908WR,115 is an N-channel dual-gate RF MOSFET produced by NXP USA Inc.

  2. What is the continuous drain current of the BF908WR,115?

    The continuous drain current is 40 mA.

  3. What is the drain-source breakdown voltage of the BF908WR,115?

    The drain-source breakdown voltage is 12 V.

  4. What is the operating frequency range of the BF908WR,115?

    The operating frequency range is up to 1 GHz.

  5. What is the package type of the BF908WR,115?

    The package type is 4-SOT-343R.

  6. Is the BF908WR,115 still in production?

    No, the BF908WR,115 is no longer manufactured.

  7. What are the typical applications of the BF908WR,115?

    Typical applications include wireless communication systems, RF amplifiers, and high-frequency circuits.

  8. What are the key features of the BF908WR,115?
  9. What is the power dissipation of the BF908WR,115?

    The power dissipation is 200 mW.

  10. What are the operating temperature ranges of the BF908WR,115?

    The operating temperature ranges from -55°C to +150°C.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:200MHz
Gain:- 
Voltage - Test:8 V
Current Rating (Amps):40mA
Noise Figure:0.6dB
Current - Test:15 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
0 Remaining View Similar

In Stock

-
381

Please send RFQ , we will respond immediately.

Similar Products

Part Number BF908WR,115 BF998WR,115 BF909WR,115 BF904WR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 200MHz 200MHz 800MHz 200MHz
Gain - - - -
Voltage - Test 8 V 8 V 5 V 5 V
Current Rating (Amps) 40mA 30mA 40mA 30mA
Noise Figure 0.6dB 0.6dB 2dB 1dB
Current - Test 15 mA 10 mA 15 mA 10 mA
Power - Output - - - -
Voltage - Rated 12 V 12 V 7 V 7 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4 CMPAK-4 CMPAK-4

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
CLF1G0035-100
CLF1G0035-100
Rochester Electronics, LLC
CLF1G0035-100 - 100W BROADBAND R
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
PD55025-E
PD55025-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
PD57006STR-E
PD57006STR-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
BF908,215
BF908,215
NXP USA Inc.
MOSFET N-CH 12V 40MA SOT143B
BLF6G10LS-260PRN,1
BLF6G10LS-260PRN,1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BF992,215
BF992,215
NXP USA Inc.
MOSFET NCH DUAL GATE 20V SOT143B
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
A2T21H410-24SR6
A2T21H410-24SR6
NXP USA Inc.
IC TRANS RF LDMOS

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
PDZ24B/ZLX
PDZ24B/ZLX
NXP USA Inc.
DIODE ZENER SOD323
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
MKE04Z64VLH4
MKE04Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
LPC2468FET208K
LPC2468FET208K
NXP USA Inc.
IC MCU 16/32BIT 512KB 208TFBGA
P89LPC954FBD48,151
P89LPC954FBD48,151
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO