BF908WR,115
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NXP USA Inc. BF908WR,115

Manufacturer No:
BF908WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET NCH DUAL GATE 12V CMPAK-4
Delivery:
Payment:
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Product Introduction

Overview

The BF908WR,115 is an N-channel dual-gate RF MOSFET produced by NXP USA Inc. This component is designed for RF applications and is characterized by its stable and efficient operation. Although it is no longer in production, it remains relevant for legacy systems and specific RF requirements.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Technology Silicon (Si)
Id - Continuous Drain Current 40 mA
Vds - Drain-Source Breakdown Voltage 12 V
Operating Frequency Up to 1 GHz
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) +150
Mounting Style SMD/SMT
Channel Mode Enhancement
Configuration Dual Gate
Package 4-SOT-343R
Pd - Power Dissipation 200 mW
Vgs - Gate-Source Voltage Up to 12 V

Key Features

  • Dual-gate design ensuring stable and efficient operation.
  • High-frequency performance suitable for RF applications up to 1 GHz.
  • Low noise operation, making it ideal for wireless communication systems.
  • Enhancement mode operation with a continuous drain current of 40 mA.
  • Compact SMD/SMT package (4-SOT-343R) for space-efficient designs.

Applications

  • Wireless communication systems, including UHF band applications.
  • RF amplifiers and switches in various communication devices.
  • Legacy systems that require specific RF MOSFET characteristics.
  • High-frequency circuits where low noise and stable operation are crucial.

Q & A

  1. What is the BF908WR,115?

    The BF908WR,115 is an N-channel dual-gate RF MOSFET produced by NXP USA Inc.

  2. What is the continuous drain current of the BF908WR,115?

    The continuous drain current is 40 mA.

  3. What is the drain-source breakdown voltage of the BF908WR,115?

    The drain-source breakdown voltage is 12 V.

  4. What is the operating frequency range of the BF908WR,115?

    The operating frequency range is up to 1 GHz.

  5. What is the package type of the BF908WR,115?

    The package type is 4-SOT-343R.

  6. Is the BF908WR,115 still in production?

    No, the BF908WR,115 is no longer manufactured.

  7. What are the typical applications of the BF908WR,115?

    Typical applications include wireless communication systems, RF amplifiers, and high-frequency circuits.

  8. What are the key features of the BF908WR,115?
  9. What is the power dissipation of the BF908WR,115?

    The power dissipation is 200 mW.

  10. What are the operating temperature ranges of the BF908WR,115?

    The operating temperature ranges from -55°C to +150°C.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:200MHz
Gain:- 
Voltage - Test:8 V
Current Rating (Amps):40mA
Noise Figure:0.6dB
Current - Test:15 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
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Similar Products

Part Number BF908WR,115 BF998WR,115 BF909WR,115 BF904WR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 200MHz 200MHz 800MHz 200MHz
Gain - - - -
Voltage - Test 8 V 8 V 5 V 5 V
Current Rating (Amps) 40mA 30mA 40mA 30mA
Noise Figure 0.6dB 0.6dB 2dB 1dB
Current - Test 15 mA 10 mA 15 mA 10 mA
Power - Output - - - -
Voltage - Rated 12 V 12 V 7 V 7 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4 CMPAK-4 CMPAK-4

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