BF998WR,115
  • Share:

NXP USA Inc. BF998WR,115

Manufacturer No:
BF998WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 12V 30MA SOT343R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF998WR,115 is a low-noise RF MOSFET produced by NXP USA Inc. This component is specifically designed for wireless communication systems and ultra-high frequency (UHF) band applications. It features a dual gate design, which ensures stable and efficient operation. The BF998WR,115 is packaged in a CMPAK-4 (SC-82A, SOT-343) case, making it suitable for surface mount technology (SMT) applications.

Key Specifications

Parameter Value
Manufacturer NXP USA Inc.
Part Number BF998WR,115
Configuration N-Channel Dual Gate
Package CMPAK-4 (SC-82A, SOT-343)
Drain-Source Breakdown Voltage (Vds) 12 V
Gate-Source Voltage (Vgs) 8 V to 12 V
Continuous Drain Current (Id) 30 mA
Power Dissipation (Pd) 200 mW
Operating Frequency Up to 1 GHz
Minimum Operating Temperature -55°C
Maximum Operating Temperature +150°C
Mounting Style SMD/SMT
Channel Mode Enhancement
Height 1 mm
Length 2.9 mm
Width 1.3 mm

Key Features

  • Dual Gate Design: Ensures stable and efficient operation, particularly in RF applications.
  • Low Noise Operation: Ideal for wireless communication systems where low noise is critical.
  • High Frequency Capability: Operates up to 1 GHz, making it suitable for UHF band applications.
  • Surface Mount Technology (SMT): Packaged in CMPAK-4 (SC-82A, SOT-343) for easy integration into SMT designs.
  • Enhancement Mode: N-Channel enhancement mode MOSFET for precise current control.
  • Wide Temperature Range: Operates from -55°C to +150°C, ensuring reliability in various environmental conditions.

Applications

  • Wireless Communication Systems: Suitable for use in cellular networks, Wi-Fi, and other wireless communication systems.
  • RF Amplifiers and Switches: Used in RF amplifiers and switches due to its high frequency capability and low noise operation.
  • UHF Band Applications: Ideal for applications requiring operation in the ultra-high frequency band.
  • Surface Mount Designs: Used in various SMT designs where compact size and high performance are required.

Q & A

  1. What is the part number of this RF MOSFET?

    The part number is BF998WR,115.

  2. Who is the manufacturer of the BF998WR,115?

    The manufacturer is NXP USA Inc.

  3. What is the package type of the BF998WR,115?

    The package type is CMPAK-4 (SC-82A, SOT-343).

  4. What is the maximum drain-source breakdown voltage (Vds) of the BF998WR,115?

    The maximum drain-source breakdown voltage is 12 V.

  5. What is the continuous drain current (Id) rating of the BF998WR,115?

    The continuous drain current rating is 30 mA.

  6. What is the operating frequency range of the BF998WR,115?

    The operating frequency range is up to 1 GHz.

  7. What are the minimum and maximum operating temperatures of the BF998WR,115?

    The minimum operating temperature is -55°C, and the maximum operating temperature is +150°C.

  8. Is the BF998WR,115 suitable for surface mount technology (SMT) applications?
  9. What is the channel mode of the BF998WR,115?

    The channel mode is enhancement.

  10. What are some common applications of the BF998WR,115?

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:200MHz
Gain:- 
Voltage - Test:8 V
Current Rating (Amps):30mA
Noise Figure:0.6dB
Current - Test:10 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
0 Remaining View Similar

In Stock

-
308

Please send RFQ , we will respond immediately.

Similar Products

Part Number BF998WR,115 BF908WR,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate
Frequency 200MHz 200MHz
Gain - -
Voltage - Test 8 V 8 V
Current Rating (Amps) 30mA 40mA
Noise Figure 0.6dB 0.6dB
Current - Test 10 mA 15 mA
Power - Output - -
Voltage - Rated 12 V 12 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4

Related Product By Categories

MMRF5014HR5
MMRF5014HR5
NXP USA Inc.
FET RF 125V 2.5GHZ NI360
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
NE5550979A-T1-A
NE5550979A-T1-A
Renesas Electronics America Inc
RF N-CHANNEL POWER MOSFET
BLF8G10LS-160,112
BLF8G10LS-160,112
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
PD57045-E
PD57045-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
A3I20X050GNR1
A3I20X050GNR1
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
SD2918
SD2918
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M113
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BF908R,235
BF908R,235
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143

Related Product By Brand

BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
MC9S08AC16CFGE
MC9S08AC16CFGE
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 44LQFP
LPC2131FBD64/01,15
LPC2131FBD64/01,15
NXP USA Inc.
IC MCU 16/32BIT 32KB FLSH 64LQFP
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
PCF8566T/S480/1,11
PCF8566T/S480/1,11
NXP USA Inc.
IC DRVR 7 SEGMNT 12 DIGIT 40VSO
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
BGU7224X
BGU7224X
NXP USA Inc.
IC RF AMP ISM 2.4GHZ 6HXSON
SLRC40001T/OFE,112
SLRC40001T/OFE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO