BF998WR,115
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NXP USA Inc. BF998WR,115

Manufacturer No:
BF998WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 12V 30MA SOT343R
Delivery:
Payment:
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Product Introduction

Overview

The BF998WR,115 is a low-noise RF MOSFET produced by NXP USA Inc. This component is specifically designed for wireless communication systems and ultra-high frequency (UHF) band applications. It features a dual gate design, which ensures stable and efficient operation. The BF998WR,115 is packaged in a CMPAK-4 (SC-82A, SOT-343) case, making it suitable for surface mount technology (SMT) applications.

Key Specifications

Parameter Value
Manufacturer NXP USA Inc.
Part Number BF998WR,115
Configuration N-Channel Dual Gate
Package CMPAK-4 (SC-82A, SOT-343)
Drain-Source Breakdown Voltage (Vds) 12 V
Gate-Source Voltage (Vgs) 8 V to 12 V
Continuous Drain Current (Id) 30 mA
Power Dissipation (Pd) 200 mW
Operating Frequency Up to 1 GHz
Minimum Operating Temperature -55°C
Maximum Operating Temperature +150°C
Mounting Style SMD/SMT
Channel Mode Enhancement
Height 1 mm
Length 2.9 mm
Width 1.3 mm

Key Features

  • Dual Gate Design: Ensures stable and efficient operation, particularly in RF applications.
  • Low Noise Operation: Ideal for wireless communication systems where low noise is critical.
  • High Frequency Capability: Operates up to 1 GHz, making it suitable for UHF band applications.
  • Surface Mount Technology (SMT): Packaged in CMPAK-4 (SC-82A, SOT-343) for easy integration into SMT designs.
  • Enhancement Mode: N-Channel enhancement mode MOSFET for precise current control.
  • Wide Temperature Range: Operates from -55°C to +150°C, ensuring reliability in various environmental conditions.

Applications

  • Wireless Communication Systems: Suitable for use in cellular networks, Wi-Fi, and other wireless communication systems.
  • RF Amplifiers and Switches: Used in RF amplifiers and switches due to its high frequency capability and low noise operation.
  • UHF Band Applications: Ideal for applications requiring operation in the ultra-high frequency band.
  • Surface Mount Designs: Used in various SMT designs where compact size and high performance are required.

Q & A

  1. What is the part number of this RF MOSFET?

    The part number is BF998WR,115.

  2. Who is the manufacturer of the BF998WR,115?

    The manufacturer is NXP USA Inc.

  3. What is the package type of the BF998WR,115?

    The package type is CMPAK-4 (SC-82A, SOT-343).

  4. What is the maximum drain-source breakdown voltage (Vds) of the BF998WR,115?

    The maximum drain-source breakdown voltage is 12 V.

  5. What is the continuous drain current (Id) rating of the BF998WR,115?

    The continuous drain current rating is 30 mA.

  6. What is the operating frequency range of the BF998WR,115?

    The operating frequency range is up to 1 GHz.

  7. What are the minimum and maximum operating temperatures of the BF998WR,115?

    The minimum operating temperature is -55°C, and the maximum operating temperature is +150°C.

  8. Is the BF998WR,115 suitable for surface mount technology (SMT) applications?
  9. What is the channel mode of the BF998WR,115?

    The channel mode is enhancement.

  10. What are some common applications of the BF998WR,115?

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:200MHz
Gain:- 
Voltage - Test:8 V
Current Rating (Amps):30mA
Noise Figure:0.6dB
Current - Test:10 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
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Similar Products

Part Number BF998WR,115 BF908WR,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate
Frequency 200MHz 200MHz
Gain - -
Voltage - Test 8 V 8 V
Current Rating (Amps) 30mA 40mA
Noise Figure 0.6dB 0.6dB
Current - Test 10 mA 15 mA
Power - Output - -
Voltage - Rated 12 V 12 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4

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