BF998WR,115
  • Share:

NXP USA Inc. BF998WR,115

Manufacturer No:
BF998WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 12V 30MA SOT343R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF998WR,115 is a low-noise RF MOSFET produced by NXP USA Inc. This component is specifically designed for wireless communication systems and ultra-high frequency (UHF) band applications. It features a dual gate design, which ensures stable and efficient operation. The BF998WR,115 is packaged in a CMPAK-4 (SC-82A, SOT-343) case, making it suitable for surface mount technology (SMT) applications.

Key Specifications

Parameter Value
Manufacturer NXP USA Inc.
Part Number BF998WR,115
Configuration N-Channel Dual Gate
Package CMPAK-4 (SC-82A, SOT-343)
Drain-Source Breakdown Voltage (Vds) 12 V
Gate-Source Voltage (Vgs) 8 V to 12 V
Continuous Drain Current (Id) 30 mA
Power Dissipation (Pd) 200 mW
Operating Frequency Up to 1 GHz
Minimum Operating Temperature -55°C
Maximum Operating Temperature +150°C
Mounting Style SMD/SMT
Channel Mode Enhancement
Height 1 mm
Length 2.9 mm
Width 1.3 mm

Key Features

  • Dual Gate Design: Ensures stable and efficient operation, particularly in RF applications.
  • Low Noise Operation: Ideal for wireless communication systems where low noise is critical.
  • High Frequency Capability: Operates up to 1 GHz, making it suitable for UHF band applications.
  • Surface Mount Technology (SMT): Packaged in CMPAK-4 (SC-82A, SOT-343) for easy integration into SMT designs.
  • Enhancement Mode: N-Channel enhancement mode MOSFET for precise current control.
  • Wide Temperature Range: Operates from -55°C to +150°C, ensuring reliability in various environmental conditions.

Applications

  • Wireless Communication Systems: Suitable for use in cellular networks, Wi-Fi, and other wireless communication systems.
  • RF Amplifiers and Switches: Used in RF amplifiers and switches due to its high frequency capability and low noise operation.
  • UHF Band Applications: Ideal for applications requiring operation in the ultra-high frequency band.
  • Surface Mount Designs: Used in various SMT designs where compact size and high performance are required.

Q & A

  1. What is the part number of this RF MOSFET?

    The part number is BF998WR,115.

  2. Who is the manufacturer of the BF998WR,115?

    The manufacturer is NXP USA Inc.

  3. What is the package type of the BF998WR,115?

    The package type is CMPAK-4 (SC-82A, SOT-343).

  4. What is the maximum drain-source breakdown voltage (Vds) of the BF998WR,115?

    The maximum drain-source breakdown voltage is 12 V.

  5. What is the continuous drain current (Id) rating of the BF998WR,115?

    The continuous drain current rating is 30 mA.

  6. What is the operating frequency range of the BF998WR,115?

    The operating frequency range is up to 1 GHz.

  7. What are the minimum and maximum operating temperatures of the BF998WR,115?

    The minimum operating temperature is -55°C, and the maximum operating temperature is +150°C.

  8. Is the BF998WR,115 suitable for surface mount technology (SMT) applications?
  9. What is the channel mode of the BF998WR,115?

    The channel mode is enhancement.

  10. What are some common applications of the BF998WR,115?

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:200MHz
Gain:- 
Voltage - Test:8 V
Current Rating (Amps):30mA
Noise Figure:0.6dB
Current - Test:10 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
0 Remaining View Similar

In Stock

-
308

Please send RFQ , we will respond immediately.

Similar Products

Part Number BF998WR,115 BF908WR,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate
Frequency 200MHz 200MHz
Gain - -
Voltage - Test 8 V 8 V
Current Rating (Amps) 30mA 40mA
Noise Figure 0.6dB 0.6dB
Current - Test 10 mA 15 mA
Power - Output - -
Voltage - Rated 12 V 12 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4

Related Product By Categories

BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
SMMBFJ310LT1G
SMMBFJ310LT1G
onsemi
RF MOSFET N-CH JFET 10V SOT23
AFT27S006NT1
AFT27S006NT1
NXP USA Inc.
RF MOSFET LDMOS 28V PLD1.5W
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF6G10LS-200RN,11
BLF6G10LS-200RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
MMBFJ309LT1G
MMBFJ309LT1G
onsemi
RF MOSFET N-CH JFET SOT23-3
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF6G38-25,112
BLF6G38-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608A
BLF278/01,112
BLF278/01,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B

Related Product By Brand

BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MKE04Z64VLH4
MKE04Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
LPC1114FHN33/301:5
LPC1114FHN33/301:5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
TJA1055T/2Z
TJA1055T/2Z
NXP USA Inc.
IC TRANSCEIVER 1/1 14SO
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
BGU7258X
BGU7258X
NXP USA Inc.
IC RF AMP ISM 5GHZ-6GHZ 6HXSON
PCF7941ATSM2AB120,
PCF7941ATSM2AB120,
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20SSOP
PCF7922ATT/D1AC07J
PCF7922ATT/D1AC07J
NXP USA Inc.
RF TRANSMITTER 20TSSOP