BF998WR,115
  • Share:

NXP USA Inc. BF998WR,115

Manufacturer No:
BF998WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 12V 30MA SOT343R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF998WR,115 is a low-noise RF MOSFET produced by NXP USA Inc. This component is specifically designed for wireless communication systems and ultra-high frequency (UHF) band applications. It features a dual gate design, which ensures stable and efficient operation. The BF998WR,115 is packaged in a CMPAK-4 (SC-82A, SOT-343) case, making it suitable for surface mount technology (SMT) applications.

Key Specifications

Parameter Value
Manufacturer NXP USA Inc.
Part Number BF998WR,115
Configuration N-Channel Dual Gate
Package CMPAK-4 (SC-82A, SOT-343)
Drain-Source Breakdown Voltage (Vds) 12 V
Gate-Source Voltage (Vgs) 8 V to 12 V
Continuous Drain Current (Id) 30 mA
Power Dissipation (Pd) 200 mW
Operating Frequency Up to 1 GHz
Minimum Operating Temperature -55°C
Maximum Operating Temperature +150°C
Mounting Style SMD/SMT
Channel Mode Enhancement
Height 1 mm
Length 2.9 mm
Width 1.3 mm

Key Features

  • Dual Gate Design: Ensures stable and efficient operation, particularly in RF applications.
  • Low Noise Operation: Ideal for wireless communication systems where low noise is critical.
  • High Frequency Capability: Operates up to 1 GHz, making it suitable for UHF band applications.
  • Surface Mount Technology (SMT): Packaged in CMPAK-4 (SC-82A, SOT-343) for easy integration into SMT designs.
  • Enhancement Mode: N-Channel enhancement mode MOSFET for precise current control.
  • Wide Temperature Range: Operates from -55°C to +150°C, ensuring reliability in various environmental conditions.

Applications

  • Wireless Communication Systems: Suitable for use in cellular networks, Wi-Fi, and other wireless communication systems.
  • RF Amplifiers and Switches: Used in RF amplifiers and switches due to its high frequency capability and low noise operation.
  • UHF Band Applications: Ideal for applications requiring operation in the ultra-high frequency band.
  • Surface Mount Designs: Used in various SMT designs where compact size and high performance are required.

Q & A

  1. What is the part number of this RF MOSFET?

    The part number is BF998WR,115.

  2. Who is the manufacturer of the BF998WR,115?

    The manufacturer is NXP USA Inc.

  3. What is the package type of the BF998WR,115?

    The package type is CMPAK-4 (SC-82A, SOT-343).

  4. What is the maximum drain-source breakdown voltage (Vds) of the BF998WR,115?

    The maximum drain-source breakdown voltage is 12 V.

  5. What is the continuous drain current (Id) rating of the BF998WR,115?

    The continuous drain current rating is 30 mA.

  6. What is the operating frequency range of the BF998WR,115?

    The operating frequency range is up to 1 GHz.

  7. What are the minimum and maximum operating temperatures of the BF998WR,115?

    The minimum operating temperature is -55°C, and the maximum operating temperature is +150°C.

  8. Is the BF998WR,115 suitable for surface mount technology (SMT) applications?
  9. What is the channel mode of the BF998WR,115?

    The channel mode is enhancement.

  10. What are some common applications of the BF998WR,115?

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:200MHz
Gain:- 
Voltage - Test:8 V
Current Rating (Amps):30mA
Noise Figure:0.6dB
Current - Test:10 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
0 Remaining View Similar

In Stock

-
308

Please send RFQ , we will respond immediately.

Similar Products

Part Number BF998WR,115 BF908WR,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate
Frequency 200MHz 200MHz
Gain - -
Voltage - Test 8 V 8 V
Current Rating (Amps) 30mA 40mA
Noise Figure 0.6dB 0.6dB
Current - Test 10 mA 15 mA
Power - Output - -
Voltage - Rated 12 V 12 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4

Related Product By Categories

MMBF4416A
MMBF4416A
onsemi
JFET N-CH 35V 15MA SOT23
CGHV96100F2
CGHV96100F2
Wolfspeed, Inc.
RF MOSFET HEMT 40V 440210
MRF6V12500HR5
MRF6V12500HR5
NXP USA Inc.
FET RF 110V 1.03GHZ NI-780H
PD55003-E
PD55003-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
PD55025S-E
PD55025S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
PD55003
PD55003
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
A2I25H060NR1
A2I25H060NR1
NXP USA Inc.
IC RF LDMOS AMP

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
LPC1114FHN33/202,5
LPC1114FHN33/202,5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
LPC1763FBD100,551
LPC1763FBD100,551
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 100LQFP
MCIMX6S5EVM10AB
MCIMX6S5EVM10AB
NXP USA Inc.
IC MPU I.MX6S 1.0GHZ 624MAPBGA
AU5780AD/N,112
AU5780AD/N,112
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
SA5212AD,602
SA5212AD,602
NXP USA Inc.
IC TRANSIMPEDANCE 1 CIRCUIT 8SO
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN
MC56F82748VLH,557
MC56F82748VLH,557
NXP USA Inc.
DIGITAL SIGNAL CONTROLLER