IRF4905STRRPBF
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Infineon Technologies IRF4905STRRPBF

Manufacturer No:
IRF4905STRRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 55V 42A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF4905STRRPBF is a -55V single P-channel HEXFET power MOSFET manufactured by Infineon Technologies. This device is housed in the industry-standard D2PAK package, which is known for its high-current carrying capability and suitability for surface-mount applications. The IRF4905STRRPBF is optimized for switching frequencies below 100 kHz and features a planar cell structure that enhances its safe operating area (SOA). It is also fully avalanche rated and compliant with RoHS standards, making it a reliable choice for various industrial and consumer applications.

Key Specifications

ParameterValue
Drain to Source Voltage (Vds)-55V
Gate to Source Voltage (Vgs)±20V
On Resistance (Rds(on))20mΩ at Vgs = -10V
Continuous Drain Current (Id)-74A at Vgs = -10V and 25°C
Power Dissipation (Pd)200W at 25°C
Junction Temperature Range-55°C to 175°C
Package TypeD2PAK
Maximum Drain Current (Idm)-280A

Key Features

  • Planar cell structure for wide SOA
  • Optimized for switching frequencies below 100 kHz
  • Industry-standard surface-mount D2PAK package
  • High-current carrying capability (up to 74A continuous drain current)
  • Low on-resistance (Rds(on) of 20mΩ at Vgs = -10V)
  • Fully avalanche rated
  • Dynamic dv/dt rating
  • Fast switching speed
  • Rugged device design
  • RoHS compliant

Applications

  • Communications equipment: Broadband fixed-line access, Datacom modules, Wired networking, Wireless infrastructure
  • Industrial: Aerospace & defense, Appliances, Building automation, Electronic point of sale (EPOS), Factory automation & control, Grid infrastructure, Industrial transport, Lighting, Medical, Motor drives, Power delivery, Pro audio, video & signage, Test & measurement
  • Personal electronics: Connected peripherals & printers, Data storage, Gaming, Home theater & entertainment, Mobile phones, PC & notebooks, Portable electronics, Tablets, TV, Wearables (non-medical)

Q & A

  1. What is the drain to source voltage rating of the IRF4905STRRPBF?
    The drain to source voltage (Vds) rating is -55V.
  2. What is the gate to source voltage rating of the IRF4905STRRPBF?
    The gate to source voltage (Vgs) rating is ±20V.
  3. What is the on-resistance (Rds(on)) of the IRF4905STRRPBF?
    The on-resistance (Rds(on)) is 20mΩ at Vgs = -10V.
  4. What is the continuous drain current (Id) of the IRF4905STRRPBF?
    The continuous drain current (Id) is -74A at Vgs = -10V and 25°C.
  5. What is the power dissipation (Pd) of the IRF4905STRRPBF?
    The power dissipation (Pd) is 200W at 25°C.
  6. What is the junction temperature range of the IRF4905STRRPBF?
    The junction temperature range is -55°C to 175°C.
  7. Is the IRF4905STRRPBF RoHS compliant?
    Yes, the IRF4905STRRPBF is RoHS compliant.
  8. What package type does the IRF4905STRRPBF use?
    The IRF4905STRRPBF uses the D2PAK package.
  9. What are some typical applications of the IRF4905STRRPBF?
    Typical applications include communications equipment, industrial systems, and personal electronics.
  10. Is the IRF4905STRRPBF fully avalanche rated?
    Yes, the IRF4905STRRPBF is fully avalanche rated.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

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IRF4905SPBF
IRF4905SPBF
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Similar Products

Part Number IRF4905STRRPBF IRF4905STRLPBF
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 42A, 10V 20mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V 3500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 170W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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