IRF4905SPBF
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Infineon Technologies IRF4905SPBF

Manufacturer No:
IRF4905SPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 55V 42A D2PAK
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The IRF4905SPBF is a single P-Channel HEXFET Power MOSFET produced by Infineon Technologies. This device is housed in a D2-Pak package and is designed for high-performance applications. It features advanced process technology, ultra-low on-resistance, and a high operating junction temperature of up to 150°C. The IRF4905SPBF is optimized for fast switching speeds and has an improved repetitive avalanche rating, making it highly efficient and reliable for various applications.

Key Specifications

Parameter Units Min. Typ. Max.
VDSS (Drain-to-Source Breakdown Voltage) V -55 - -
RDS(on) (Static Drain-to-Source On-Resistance) mΩ - - 20
ID @ TC = 25°C (Continuous Drain Current, VGS @ 10V) A -42 - -
IDM (Pulsed Drain Current) A - - -280
VGS(th) (Gate Threshold Voltage) V -2.0 - -4.0
TJ (Operating Junction and TSTG Storage Temperature Range) °C -55 to +150 - -
RθJC (Junction-to-Case Thermal Resistance) °C/W - - 0.75

Key Features

  • Advanced Process Technology: Ensures high performance and reliability.
  • Ultra Low On-Resistance: RDS(on) of up to 20 mΩ.
  • High Operating Temperature: Junction operating temperature up to 150°C.
  • Fast Switching Speed: Optimized for fast switching applications.
  • Repetitive Avalanche Allowed: Up to Tjmax for enhanced reliability.
  • Lead-Free: Compliant with lead-free requirements.
  • Planar Cell Structure: Provides a wide Safe Operating Area (SOA).
  • Industry Standard Package: D2-Pak package for easy integration.

Applications

  • Power Supplies: Suitable for high-efficiency power supply designs.
  • Motor Control: Used in motor drive applications due to its high current carrying capability.
  • Switch Mode Applications: Ideal for switching frequencies below 100 kHz.
  • Automotive Systems: Can be used in various automotive power management systems.
  • Industrial Power Systems: Applicable in industrial power conversion and control systems.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the IRF4905SPBF?

    The maximum drain-to-source breakdown voltage (VDSS) is -55V.

  2. What is the typical on-resistance of the IRF4905SPBF?

    The typical static drain-to-source on-resistance (RDS(on)) is up to 20 mΩ.

  3. What is the maximum continuous drain current at 25°C for the IRF4905SPBF?

    The maximum continuous drain current (ID) at 25°C is -42A.

  4. What is the operating junction temperature range of the IRF4905SPBF?

    The operating junction temperature range (TJ) is -55°C to +150°C.

  5. Is the IRF4905SPBF lead-free?

    Yes, the IRF4905SPBF is lead-free.[

  6. What package type is the IRF4905SPBF available in?

    The IRF4905SPBF is available in a D2-Pak package.

  7. What are some typical applications for the IRF4905SPBF?

    Typical applications include power supplies, motor control, switch mode applications, automotive systems, and industrial power systems.[

  8. Does the IRF4905SPBF support repetitive avalanche?

    Yes, the IRF4905SPBF supports repetitive avalanche up to Tjmax.[

  9. What is the gate threshold voltage range of the IRF4905SPBF?

    The gate threshold voltage (VGS(th)) range is -2.0V to -4.0V.[

  10. Is the IRF4905SPBF compliant with JEDEC standards?

    Yes, the IRF4905SPBF is product-qualified according to JEDEC standards.[

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRF4905SPBF
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Similar Products

Part Number IRF4905SPBF IRF4905LPBF IRF4905PBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 42A (Tc) 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 42A, 10V 20mOhm @ 42A, 10V 20mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V 3500 pF @ 25 V 3400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 170W (Tc) 170W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

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