BFS17WE6327HTSA1
  • Share:

Infineon Technologies BFS17WE6327HTSA1

Manufacturer No:
BFS17WE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.4GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFS17WE6327HTSA1 is a high-performance RF transistor produced by Infineon Technologies. This NPN transistor is designed for use in high-frequency applications, offering excellent noise figure and transition frequency characteristics. It is packaged in a compact SOT-23-3 package, making it suitable for a variety of modern electronic designs.

Key Specifications

ParameterValueUnit
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Noise Figure (dB Typ @ f)3.5dB ~ 5dB @ 800MHz
Operating Temperature150°C (TJ)
Power280mW
Mounting TypeSurface Mount
Frequency - Transition1.4GHz
PackageTO-236-3, SC-59, SOT-23-3
Current25mA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 2mA, 1V

Key Features

  • High transition frequency of 1.4GHz, making it suitable for high-frequency applications.
  • Low noise figure of 3.5dB ~ 5dB at 800MHz, ensuring minimal signal distortion.
  • Compact SOT-23-3 package for space-efficient designs.
  • High operating temperature up to 150°C, enhancing reliability in demanding environments.
  • Surface mount technology for easy integration into modern PCB designs.

Applications

The BFS17WE6327HTSA1 is ideal for various high-frequency applications, including:

  • RF amplifiers and circuits.
  • Wireless communication systems.
  • Microwave and radar systems.
  • High-speed data transmission systems.

Q & A

  1. What is the transistor type of the BFS17WE6327HTSA1?
    The BFS17WE6327HTSA1 is an NPN transistor.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 15V.
  3. What is the noise figure of the BFS17WE6327HTSA1 at 800MHz?
    The noise figure is 3.5dB ~ 5dB at 800MHz.
  4. What is the operating temperature range of the BFS17WE6327HTSA1?
    The operating temperature range is up to 150°C (TJ).
  5. What is the power rating of the BFS17WE6327HTSA1?
    The power rating is 280mW.
  6. What is the transition frequency of the BFS17WE6327HTSA1?
    The transition frequency is 1.4GHz.
  7. What package types are available for the BFS17WE6327HTSA1?
    The available package types include TO-236-3, SC-59, and SOT-23-3.
  8. What is the current rating of the BFS17WE6327HTSA1?
    The current rating is 25mA.
  9. What is the DC current gain (hFE) of the BFS17WE6327HTSA1?
    The DC current gain (hFE) is 40 @ 2mA, 1V.
  10. Is the BFS17WE6327HTSA1 suitable for surface mount technology?
    Yes, the BFS17WE6327HTSA1 is designed for surface mount technology.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB ~ 5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

-
372

Please send RFQ , we will respond immediately.

Same Series
BFS17WE6327HTSA1
BFS17WE6327HTSA1
RF TRANS NPN 15V 1.4GHZ SOT323-3

Similar Products

Part Number BFS17WE6327HTSA1 BFS17PE6327HTSA1 BFS17SE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Obsolete
Transistor Type NPN NPN 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V
Frequency - Transition 1.4GHz 1.4GHz 1.4GHz
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz 3.5dB ~ 5dB @ 800MHz 3dB ~ 5dB @ 800MHz
Gain - - -
Power - Max 280mW 280mW 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V 40 @ 2mA, 1V 40 @ 2mA, 1V
Current - Collector (Ic) (Max) 25mA 25mA 25mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT323 PG-SOT23 PG-SOT363-PO

Related Product By Categories

MMBTH10LT1G
MMBTH10LT1G
onsemi
RF TRANS NPN 25V 650MHZ SOT23-3
BFU550215
BFU550215
NXP USA Inc.
NPN RF TRANSISTOR
BFS17WE6327
BFS17WE6327
Infineon Technologies
RF BIPOLAR TRANSISTOR
BLF6G20S-45112
BLF6G20S-45112
NXP USA Inc.
RF POWER TRANSISTORS
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFU520YF
BFU520YF
NXP USA Inc.
RF TRANS 2 NPN 12V 10GHZ SOT363
BFR93AR,215
BFR93AR,215
NXP USA Inc.
RF TRANS NPN 12V 6GHZ TO236AB
BFG480W,115
BFG480W,115
NXP USA Inc.
RF TRANS NPN 4.5V 21GHZ CMPAK-4
BFQ67,215
BFQ67,215
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
BFG520/XR,235
BFG520/XR,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143R
BLT81,115
BLT81,115
NXP USA Inc.
RF TRANS NPN 9.5V 900MHZ SOT223
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3

Related Product By Brand

BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAS4005E6327HTSA1
BAS4005E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS16-03WE6327
BAS16-03WE6327
Infineon Technologies
RECTIFIER DIODE, 0.25A, 80V
BC817UPNE6327HTSA1
BC817UPNE6327HTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74
BC847PNE6433BTMA1
BC847PNE6433BTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC807-40E6433
BC807-40E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC856BE6327
BC856BE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCP 54-16 E6327
BCP 54-16 E6327
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IRF100B201
IRF100B201
Infineon Technologies
MOSFET N-CH 100V 192A TO220AB
TLE62086G
TLE62086G
Infineon Technologies
BRUSH DC MOTOR CONTROLLER
XDPE12284C0000XUMA1
XDPE12284C0000XUMA1
Infineon Technologies
IC REG LINEAR VOLTAGE NEG
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA