BFS17WE6327HTSA1
  • Share:

Infineon Technologies BFS17WE6327HTSA1

Manufacturer No:
BFS17WE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.4GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFS17WE6327HTSA1 is a high-performance RF transistor produced by Infineon Technologies. This NPN transistor is designed for use in high-frequency applications, offering excellent noise figure and transition frequency characteristics. It is packaged in a compact SOT-23-3 package, making it suitable for a variety of modern electronic designs.

Key Specifications

ParameterValueUnit
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Noise Figure (dB Typ @ f)3.5dB ~ 5dB @ 800MHz
Operating Temperature150°C (TJ)
Power280mW
Mounting TypeSurface Mount
Frequency - Transition1.4GHz
PackageTO-236-3, SC-59, SOT-23-3
Current25mA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 2mA, 1V

Key Features

  • High transition frequency of 1.4GHz, making it suitable for high-frequency applications.
  • Low noise figure of 3.5dB ~ 5dB at 800MHz, ensuring minimal signal distortion.
  • Compact SOT-23-3 package for space-efficient designs.
  • High operating temperature up to 150°C, enhancing reliability in demanding environments.
  • Surface mount technology for easy integration into modern PCB designs.

Applications

The BFS17WE6327HTSA1 is ideal for various high-frequency applications, including:

  • RF amplifiers and circuits.
  • Wireless communication systems.
  • Microwave and radar systems.
  • High-speed data transmission systems.

Q & A

  1. What is the transistor type of the BFS17WE6327HTSA1?
    The BFS17WE6327HTSA1 is an NPN transistor.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 15V.
  3. What is the noise figure of the BFS17WE6327HTSA1 at 800MHz?
    The noise figure is 3.5dB ~ 5dB at 800MHz.
  4. What is the operating temperature range of the BFS17WE6327HTSA1?
    The operating temperature range is up to 150°C (TJ).
  5. What is the power rating of the BFS17WE6327HTSA1?
    The power rating is 280mW.
  6. What is the transition frequency of the BFS17WE6327HTSA1?
    The transition frequency is 1.4GHz.
  7. What package types are available for the BFS17WE6327HTSA1?
    The available package types include TO-236-3, SC-59, and SOT-23-3.
  8. What is the current rating of the BFS17WE6327HTSA1?
    The current rating is 25mA.
  9. What is the DC current gain (hFE) of the BFS17WE6327HTSA1?
    The DC current gain (hFE) is 40 @ 2mA, 1V.
  10. Is the BFS17WE6327HTSA1 suitable for surface mount technology?
    Yes, the BFS17WE6327HTSA1 is designed for surface mount technology.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB ~ 5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

-
372

Please send RFQ , we will respond immediately.

Same Series
BFS17WE6327HTSA1
BFS17WE6327HTSA1
RF TRANS NPN 15V 1.4GHZ SOT323-3

Similar Products

Part Number BFS17WE6327HTSA1 BFS17PE6327HTSA1 BFS17SE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Obsolete
Transistor Type NPN NPN 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V
Frequency - Transition 1.4GHz 1.4GHz 1.4GHz
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz 3.5dB ~ 5dB @ 800MHz 3dB ~ 5dB @ 800MHz
Gain - - -
Power - Max 280mW 280mW 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V 40 @ 2mA, 1V 40 @ 2mA, 1V
Current - Collector (Ic) (Max) 25mA 25mA 25mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT323 PG-SOT23 PG-SOT363-PO

Related Product By Categories

BFR93AWH6327XTSA1
BFR93AWH6327XTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3
BFU530WX
BFU530WX
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
BFU550XRR
BFU550XRR
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143R
PBR941
PBR941
NXP Semiconductors
RF SMALL SIGNAL BIPOLAR TRANSIST
BFR106E6327HTSA1
BFR106E6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 5GHZ SOT23-3
BFU520R
BFU520R
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
2SC5226A-4-TL-E
2SC5226A-4-TL-E
onsemi
RF TRANS NPN 10V 7GHZ 3MCP
BFS17WH6327XTSA1
BFS17WH6327XTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
BFQ67W,115
BFQ67W,115
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT323-3
BFG97,135
BFG97,135
NXP USA Inc.
RF TRANS NPN 15V 5.5GHZ SOT223
BFS17,215
BFS17,215
NXP USA Inc.
RF TRANS NPN 15V 1GHZ TO236AB
BFR92AW,135
BFR92AW,135
NXP USA Inc.
RF TRANS NPN 15V 5GHZ SOT323-3

Related Product By Brand

BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC847CE6327HTSA1
BC847CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC80740B5003XT
BC80740B5003XT
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BC 846B E6327
BC 846B E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRFP064NPBF
IRFP064NPBF
Infineon Technologies
MOSFET N-CH 55V 110A TO247AC
IRFR024NTRPBF
IRFR024NTRPBF
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
TDA5210XUMA1
TDA5210XUMA1
Infineon Technologies
RF RX ASK/FSK 810-870MHZ 28TSSOP