BFS17WE6327HTSA1
  • Share:

Infineon Technologies BFS17WE6327HTSA1

Manufacturer No:
BFS17WE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.4GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFS17WE6327HTSA1 is a high-performance RF transistor produced by Infineon Technologies. This NPN transistor is designed for use in high-frequency applications, offering excellent noise figure and transition frequency characteristics. It is packaged in a compact SOT-23-3 package, making it suitable for a variety of modern electronic designs.

Key Specifications

ParameterValueUnit
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Noise Figure (dB Typ @ f)3.5dB ~ 5dB @ 800MHz
Operating Temperature150°C (TJ)
Power280mW
Mounting TypeSurface Mount
Frequency - Transition1.4GHz
PackageTO-236-3, SC-59, SOT-23-3
Current25mA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 2mA, 1V

Key Features

  • High transition frequency of 1.4GHz, making it suitable for high-frequency applications.
  • Low noise figure of 3.5dB ~ 5dB at 800MHz, ensuring minimal signal distortion.
  • Compact SOT-23-3 package for space-efficient designs.
  • High operating temperature up to 150°C, enhancing reliability in demanding environments.
  • Surface mount technology for easy integration into modern PCB designs.

Applications

The BFS17WE6327HTSA1 is ideal for various high-frequency applications, including:

  • RF amplifiers and circuits.
  • Wireless communication systems.
  • Microwave and radar systems.
  • High-speed data transmission systems.

Q & A

  1. What is the transistor type of the BFS17WE6327HTSA1?
    The BFS17WE6327HTSA1 is an NPN transistor.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 15V.
  3. What is the noise figure of the BFS17WE6327HTSA1 at 800MHz?
    The noise figure is 3.5dB ~ 5dB at 800MHz.
  4. What is the operating temperature range of the BFS17WE6327HTSA1?
    The operating temperature range is up to 150°C (TJ).
  5. What is the power rating of the BFS17WE6327HTSA1?
    The power rating is 280mW.
  6. What is the transition frequency of the BFS17WE6327HTSA1?
    The transition frequency is 1.4GHz.
  7. What package types are available for the BFS17WE6327HTSA1?
    The available package types include TO-236-3, SC-59, and SOT-23-3.
  8. What is the current rating of the BFS17WE6327HTSA1?
    The current rating is 25mA.
  9. What is the DC current gain (hFE) of the BFS17WE6327HTSA1?
    The DC current gain (hFE) is 40 @ 2mA, 1V.
  10. Is the BFS17WE6327HTSA1 suitable for surface mount technology?
    Yes, the BFS17WE6327HTSA1 is designed for surface mount technology.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB ~ 5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

-
372

Please send RFQ , we will respond immediately.

Same Series
BFS17WE6327HTSA1
BFS17WE6327HTSA1
RF TRANS NPN 15V 1.4GHZ SOT323-3

Similar Products

Part Number BFS17WE6327HTSA1 BFS17PE6327HTSA1 BFS17SE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Obsolete
Transistor Type NPN NPN 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V
Frequency - Transition 1.4GHz 1.4GHz 1.4GHz
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz 3.5dB ~ 5dB @ 800MHz 3dB ~ 5dB @ 800MHz
Gain - - -
Power - Max 280mW 280mW 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V 40 @ 2mA, 1V 40 @ 2mA, 1V
Current - Collector (Ic) (Max) 25mA 25mA 25mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT323 PG-SOT23 PG-SOT363-PO

Related Product By Categories

BFR106E6327HTSA1
BFR106E6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 5GHZ SOT23-3
BFR93AWE6327
BFR93AWE6327
Infineon Technologies
RF BIPOLAR TRANSISTOR
BFU550XRR215
BFU550XRR215
NXP USA Inc.
NPN RF TRANSISTOR
BLF6G20S-45112
BLF6G20S-45112
NXP USA Inc.
RF POWER TRANSISTORS
BFU530WF
BFU530WF
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFG410W,135
BFG410W,135
NXP USA Inc.
RF TRANS NPN 4.5V 22GHZ CMPAK-4
BFS17W,115
BFS17W,115
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
BFS520,115
BFS520,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
BFG424F,115
BFG424F,115
NXP USA Inc.
RF TRANS NPN 4.5V 25GHZ 4SO
BFR93A,235
BFR93A,235
NXP USA Inc.
RF TRANS NPN 12V 6GHZ TO236AB
LM3046MX/NOPB
LM3046MX/NOPB
Texas Instruments
RF TRANS 5 NPN 15V 14SOIC

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS16SH6727XTSA1
BAS16SH6727XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BCV62CE6327HTSA1
BCV62CE6327HTSA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
MMBT2907ALT1HTSA1
MMBT2907ALT1HTSA1
Infineon Technologies
TRANS PNP 60V 0.6A SOT23
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
IPW65R080CFDFKSA1
IPW65R080CFDFKSA1
Infineon Technologies
MOSFET N-CH 700V 43.3A TO247-3
IRF540NSTRRPBF
IRF540NSTRRPBF
Infineon Technologies
MOSFET N-CH 100V 33A D2PAK
IPB042N10N3GE8187ATMA1
IPB042N10N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A D2PAK
FF600R12ME4CB11BPSA1
FF600R12ME4CB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
BCV61BE6327
BCV61BE6327
Infineon Technologies
TRANSISTORS FOR CURRENT MIRROR
ICE2PCS02GFUMA1
ICE2PCS02GFUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO