BFS17WH6393XTSA1
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Infineon Technologies BFS17WH6393XTSA1

Manufacturer No:
BFS17WH6393XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN SOT323-3
Delivery:
Payment:
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Product Introduction

Overview

The BFS17WH6393XTSA1 is a high-performance RF transistor manufactured by Infineon Technologies. This NPN bipolar transistor is designed for use in low noise, high-gain broadband amplifiers. It is particularly suited for applications requiring high frequency operation and low noise figures.

Key Specifications

ParameterValue
TypeNPN Bipolar RF Transistor
Collector-Emitter Voltage (Vce)15V
Collector Current (Ic)25mA
Frequency (fT)8 GHz
Noise Figure (F)0.9 dB at 900 MHz
Power Dissipation (Pd)280mW
PackagePG-SOT323 (Surface Mount)
RoHS CompliancePb-free (RoHS compliant)

Key Features

  • High gain and low noise figure, making it ideal for broadband amplifiers.
  • Operates at collector currents from 1 mA to 20 mA.
  • High transition frequency (fT) of 8 GHz.
  • Low noise figure of 0.9 dB at 900 MHz.
  • Pb-free and RoHS compliant.

Applications

The BFS17WH6393XTSA1 is suitable for a variety of RF applications, including:

  • Low noise, high-gain broadband amplifiers.
  • Wireless communication systems.
  • Radar and microwave systems.
  • High-frequency signal amplification.

Q & A

  1. What is the type of the BFS17WH6393XTSA1 transistor? The BFS17WH6393XTSA1 is an NPN bipolar RF transistor.
  2. What is the maximum collector current of the BFS17WH6393XTSA1? The maximum collector current is 25mA.
  3. What is the transition frequency (fT) of the BFS17WH6393XTSA1? The transition frequency (fT) is 8 GHz.
  4. What is the noise figure of the BFS17WH6393XTSA1 at 900 MHz? The noise figure is 0.9 dB at 900 MHz.
  5. What is the power dissipation of the BFS17WH6393XTSA1? The power dissipation is 280mW.
  6. Is the BFS17WH6393XTSA1 RoHS compliant? Yes, the BFS17WH6393XTSA1 is Pb-free and RoHS compliant.
  7. What is the package type of the BFS17WH6393XTSA1? The package type is PG-SOT323 (Surface Mount).
  8. What are the typical applications of the BFS17WH6393XTSA1? Typical applications include low noise, high-gain broadband amplifiers, wireless communication systems, radar and microwave systems, and high-frequency signal amplification.
  9. What is the collector-emitter voltage (Vce) of the BFS17WH6393XTSA1? The collector-emitter voltage (Vce) is 15V.
  10. At what collector current range does the BFS17WH6393XTSA1 operate? The BFS17WH6393XTSA1 operates at collector currents from 1 mA to 20 mA.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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